Peak one cycle surge current
Repetitive peak OFF-state voltageV
*2
Isolation voltage
Operating temperature
Storage temperature
*3
Soldering temperature
*1 50Hz sine wave
*2 40 to 60% RH, AC for 1 minute, f=60Hz
*3 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
I
V
T
T
T
F
R
T
surge
DRM
iso
opr
stg
sol
50mA
6V
0.3A
rms
3A
400V
4 000V
rms
- 25 to +80˚C
- 40 to +125˚C
260˚C
S13MD01
■
Electro-optical Characteristics
ParameterSymbol
Input
Forward voltageV
Reverse currentI
Repetitive peak OFF-state current
Output
ON-state voltageV
Holding currentI
Critical rate of rise of OFF-state voltage
Minimum trigger currentI
Transfer
characteristics
Insulation resistanceR
Turn-on timet
Fig. 1 RMS ON-state Current vs. Ambient
Temperature
0.8
0.7
)
rms
0.6
(A
T
0.5
0.4
0.3
0.2
RMS ON-state current I
0.1
0
- 250255075100
Ambient temperature Ta (˚C)
60
F
R
I
DRM
T
H
dv/dt2 )• RatedV
FT
ISO
on
(Ta=25˚C)
Conditions
MIN.TYP.MAX.Unit
IF= 20mA-1.21.4V
VR=3V--10µA
V
= Rated--100µ A
DRM
IT= 0.3A--3.0V
VD=6V--25mA
=(1/100--V/µs
DRM
= 100Ω
= 6V, R
V
D
L
DC500V, 40to 60% RH5x10
VD= 6V, RL= 100Ω
= 20mA
I
F
--10mA
10
1x10
11
-Ω
--100µ s
Fig. 2 Forward Current vs. Ambient
Temperature
60
50
40
(mA)
F
30
20
Forward current I
10
0
- 2502575100
Ambient temperature Ta (˚C)
55808050
S13MD01
Fig. 3 Forward Current vs. Forward Voltage
200
100
50
(mA)
F
20
10
5
Forward current I
2
1
00.51.01.52.02.53.0
Forward voltage VF (V)
= -
T
25˚C
a
50˚C
25˚C
-
0˚C
25˚C
Fig. 5 ON-State Voltage vs. Ambient
Temperature (S13MD01)
1.4
1.3
(V)
1.2
T
1.1
1.0
ON-state voltage V
0.9
I
T
= 0.3A
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature (S13MD01)
(mA)
FT
12
10
8
6
4
2
VD=6V
R
L
Minimum trigger current I
0
- 30020406080100
Ambient Temperature Ta (˚C)
Fig. 6 Relative Holding Current vs.
Ambient Temperature (S13MD01)
3
10
(25˚C) x100%
H
(t˚C)/I
H
2
10
= 100Ω
=6V
V
D
0.8
-30
0 20406080100
Ambient Temperature Ta (˚C)
Fig. 7 ON-State Current vs. ON-State Voltage
0.5
0.4
(A)
T
0.3
0.2
ON-state current I
0.1
0
00.51.5
ON-state voltage VT (V)
(S13MD01)
IF= 20mA
Ta= 25˚C
1.0
Relative holding current I
10
-30
0 20406080100
Ambient temperature Ta (˚C)
Fig. 8 Turn-on Time vs. Forward Current
100
(µ s)
on
10
Turn-on time t
1
10203040 50
Forward current IF (mA)
(S13MD01)
VD=6V
R
= 100Ω
L
Ta= 25˚C
100
Basic Operation Circuit
■
+ V
S13MD01
R
CC
1
2
8
Load
)
AC supply voltage
Input signal
Load current
(for resistance load)
D
1
V
1
Tr1
(1) DC Drive(2) Pulse Drive(3) Phase Control
SSR
3
6
Z
Zs : Surge absorption circuit
S
AC 100V (S13MD01
Notes (1) If large amount of surge is loaded onto Vcc or the driver circuit, add a diode D1 between terminals 2 and 3 to prevent reverse
bias from being applied to the infrared LED.
(2) Be sure to install a surge absorption circuit. An appropriate circuit must be chosen according to the load
(for CR, choose its constant). This must be carefully done especially for an inductive load.
(3) For phase control, adjust such that the load current immediately after the input signal is applied will be more than 30mA.
■
Precautions for Use
(1) All pins must be soldered since they are also used as heat sinks (heat radiation fins).
In designing, consider the heat radiation from the mounted SSR.
(2) For higher radiation efficiency that allows wider thermal margin, secure a wider round pattern for Pin No. 8
when designing mounting pattern. The rounded part of Pin No. 5 (gate) must be as small as possible.
Pulling the gate pattern around increases the change of being affected by external noise.
●
As for other general cautions, refer to the chapter "Precautions for Use" (Page 78 to 93).
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