S12ME1/S12ME1F
S12ME1/S12ME1F
European Safety Standard Approved,
Long Creepage Distance Type
Photothyristor Coupler
❈ Lead forming type (I type) and taping reel type (P type) of S12ME1/S12ME1F are also available. (S12ME1I/S12ME1FI,S12ME1P/S12ME1FP
)
❈ DIN-VDE0884 approved type is also available as an option.
456
456
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
θ
(
Unit : mm
1 Anode
2 Cathode
3 NC
4 Cathode
5 Anode
6 Gate
■ Features
1. Internal insulation distance : 0.4mm or more
2. Creepage distance : 8mm or more
Space distance : 5mm or more (S12ME1
8mm or more (S12ME1F
)
)
3. Recognized by UL file No. E64380
Approved by BSI (BS415 : NO.7088, BS7002 : NO.7410
)
■ Applications
1. ON-OFF operation for low power load
2. For triggering medium or high power thyristor and triac
3. Over voltage detection of switching power supplies
■ Outline Dimensions
S12ME1
2.54
Anode
mark
0.3
±
3.4
S12ME1F
2.54
Anode
mark
0.5
±
3.4
±
0.25
S12ME1
23
1
±
0.5
9.22
0.5
±
3.7
±
0.25
S12ME1
123
±
0.5
9.22
456
1.2
0.5
456
1.2
0.5
Internal connection
diagram
0.5
±
6.5
±
0.3
0.5
±
3.5
TYP.
0.5
±
0.1
θ : 0 to 13˚
Internal connection
diagram
0.5
±
6.5
±
0.3
0.5
±
3.5
±
0.1
123
10.16
±
0.3
7.62
±
0.1
0.26
123
±
0.3
7.62
±
0.1
0.26
±
0.5
)
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.”
S12ME1/S12ME1F
■ Absolute Maximum Ratings
Parameter Symbol Rating Unit
Input
Forward current I
Reverse voltage V
RMS ON-state current I
∗1
Peak one cycle surge current I
∗2
Output
Repetitive
peak OFF-state voltage
∗2
Repetitive peak
OFF-state reverse voltage
∗3
Isolation voltage V
Operating temperature T
Storage temperature T
∗4
Soldering temperature T
∗1 50Hz sine wave
∗2 RG= 20kΩ
∗3 40 to 60% RH, AC for 1 minute, f= 60Hz
∗4 For 10 seconds
■ Electro-optical Characteristics
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Input
Output
Transfer
charac-
teristics
Forward voltage
Reverse current
Repetitive peak OFF-state
current
Repetitive peak OFF-state
reverse voltage
ON-state voltage
Holding current
Critical rate of rise of
OFF-state voltage
Minimum trigger current
Isolation resistance
Turn-on time
(
Ta = 25˚C
F
R
T
surge
V
DRM
V
RRM
iso
opr
stg
sol
V
I
I
DRMVDRM
I
RRMVDRM
V
I
dV/dt
I
R5x10
t
= 20mA - 1.2 1.4 V
FIF
VR=3V - - 10 µA
R
I
= 0.2A - 1.0 1.4 V
T
T
VD= 6V, RG= 20kΩ - - 1.0 mA
H
V
= 1/ • Rated, RG= 20kΩ
DRM
VD= 6V, RL= 100Ω , RG= 20kΩ
FT
DC500V, 40 to 60% RH
ISO
VD= 6V, RL= 100Ω , IF= 20mA
on
RG= 20kΩ
50 mA
6V
0.2 A
2A
400 V
400 V
4 000
- 30 to +100 ˚C
- 55 to +125 ˚C
260 ˚C
= Rated, RG= 20kΩ --1µA
= Rated, RG= 20kΩ --1µA
2
)
rms
V
rms
(
Ta = 25˚C
3--V/µs
- - 10 mA
10
11
10
--50µs
- Ω
)
S12ME1/S12ME1F
Fig. 1 RMS ON-state Current vs.
Ambient Temperature
0.2
)
rms
A
(
T
0.1
RMS ON-state current I
0
-
30 0 20406080100
Ambient temperature Ta (˚C
)
Fig. 3 Forward Current vs. Forward Voltage
500
200
)
mA
100
(
F
50
T
= 75˚C
a
20
10
Forward current I
5
2
1
50˚C
25˚C
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward voltage VF (V
0˚C
- 25˚C
)
Fig. 2 Forward Current vs.
Ambient Temperature
70
60
)
50
mA
(
F
40
30
20
Forward current I
10
0
-
30 0 25 50 75 100 125
Ambient temperature Ta (˚C
Fig. 4 Minimum Trigger Current vs.
Ambient Temperature
14
=6V
V
D
R
= 100Ω
L
12
)
mA
(
10
FT
8
6
4
Minimum trigger current I
2
0
-
30 0 20406080100
Ambient temperature Ta (˚C
R
G
= 10kΩ
)
20kΩ
50kΩ
)
Fig. 5 Minimum Trigger Current vs.
Gate Resistance
100
50
)
mA
(
FT
20
10
5
Minimum trigger current I
2
1
1 2 5 10 20 50 100
Gate resistance R
G
(kΩ
V
R
T
D
L
a
)
= 25˚C
=6V
= 100Ω
Fig. 6 Break Over Voltage vs.
Ambient Temperature
1000
800
)
V
(
BO
600
400
Break over voltage V
200
0
-
30 0 20406080100
Ambient temperature Ta (˚C
R
= 10kΩ
G
)
50kΩ
S12ME1/S12ME1F
Fig. 7 Critical Rate of Rise of OFF-state
Voltage vs. Ambient Temperature
100
50
= 20kΩ
R
G
V
DRM
1/ 2 Rated
=
20
10
)
5
V/ µs
(
2
dV/dt
Critical rate of rise of OFF-state voltage
1
0 20406080100
Ambient temperature Ta (˚C
)
Fig. 9 Repetitive Peak OFF-state Current vs.
Ambient temperature
-5
)
(
A
DRM
10
-6
10
-7
10
V
R
DRM
= 20kΩ
G
= Rated
Fig. 8 Holding Current vs.
Ambient Temperature
1
V
=6V
D
0.5
)
mA
(
H
0.05
0.2
0.1
20kΩ
50kΩ
R
= 10kΩ
G
Holding current I
0.02
0.01
-
30 0 20406080100
Ambient temperature Ta (˚C
)
Fig.10 Turn-on Time vs. Forward Current
100
)
50
µs
(
40
on
30
V
R
T
=6V
D
= 100Ω
L
= 25˚C
a
-8
10
Repetitive peak OFF-state current I
-9
10
0 20406080100
Ambient temperature Ta (˚C
)
Fig.11 ON-state Current vs. ON-state Voltage
200
160
)
mA
(
T
120
80
ON-state current I
40
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ON-state voltage V
I
= 20mA
F
T
= 25˚C
a
)
(V
T
20
Turn-on time t
10
10 20 50 100
30 40
Forward current I
(mA
F
)
■ Basic Operation Circuit
Medium/High Power Thyristor Drive Circuit
S12ME1/S12ME1F
+V
CC
V
IN
16
2
3
5
C
G
4
R
G
Z
Z
Medium/High Power Triac Drive Circuit (Zero-cross Operation
+ V
CC
V
IN
●
Please refer to the chapter “Precautions for Use”(Page 78 to 93).
16
2
3
5
R
G
C
G
4
Load
S
: Snubber circuit
S
AC 100V
)
Load
AC 100V
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