Datasheet RX-2B Datasheet (SILAN)

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Silan Semiconductors
DESCRIPTION
The TX-2B/RX-2B is a pair of CMOS LSIs designed for remote controlled car applications. The TX-2B/RX-2B has five control keys for controlling the motions (i.e. forward, backward, rightward, leftward and the turbo function ) of the remote controlled car.
FEATURES
* Wide operating voltage range (VCC=1.5~5.0V) * Low stand-by current * Auto-power-off function for TX-2B * Few external components are needed
ORDERING INFORMATION
Part No. Package
TX-2B DIP-14-300-2.54 RX-2B DIP-16-300-2.54
BLOCK DIAGRAM
TX-2B/RX-2B
DIP-14
TX-2B
RX-2B
DIP-16
OSCI
OSCO
RIGHT
LEFT
TURBO
FORWARD
BACKWARD
FOSC
13
12
11
14
Oscillator
1
6
5
4
Latch
Circuit
TRANSMITTER TX-2B Block Diagram
TEST B
2
Timing
Generator
Encoding
Circuit
GND
Logic
3
9
V
DD
PC
10
SO
8
SC
7
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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Silan Semiconductors
BLOCK DIAGRAM
OSCI
4
OSCO
5
SI
3
VO1
15
VI1
14
LDB
9
RDB
8
VI2
16
VO2
1
Oscillator
AMP
Control
Logic
Timing
Generator
Decoding
Circuit
2
GND
RECEIVER RX-2B Block Diagra m
Computer
PLA
Latch
Circuit
TX-2B/RX-2B
V
13
DD
RIGHT
6 7
LEFT TURBO
12
BACKWARD
10
FORWARD
11
PIN CONFIGURATION
RIGHT
TEST
GND
ACKWARD
FORWARD
TURBO
SC
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
1
2
3
4
5
6
7
14
LEFT
13
FOSC
12
OSCI
11
OSCO
TX-2B
10
PC
9
DD
V
8
SO
VO2
GND
OSCI
OSCO
RIGHT
LEFT
ROB
1
2
SI
3
4
5
6
7
8
16
VI2
15
VO1
VI1
14
13
DD
V
RX-2B
12
TURBO
FORWARD
11
10
BACKWARD
9
LDB
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Silan Semiconductors
ABSOLUTE MAXIMUM RATINGS
Characteristic Symbol Value Unit
Supply Voltage V Input / Output Voltage VIN,V Operating Temperature T Storage Temperature T
ELECTRICAL CHARACTERISTICS
(V
1. TX-2B
=4.0V, F
DD
Characteristic Symbol Min Typ Max Unit
Operating Voltage V Operating Current I Stand-By Current I DC O/P Driving Current I AC O/P Driving Current I AC O/P Frequency F
2. RX-2B (V
=4.0V,F
DD
=128KHz, T
osc
=128KHz, T
osc
OPR
=25°C, unless otherwise specified.)
amb
DD
DD
STB drive drive audio
=25°C, unless otherwise specified.)
amb
TX-2B/RX-2B
DD
OUT
stg
1.5 4.0 5.0 V
-- -- 2.0 mA
-- -- 10 5----mA 5----mA
0.5 -- 1.0 kHz
0.3~5.0 V
GND-0.3~VDD+0.3 V
-10~65
-25~125
°C °C
µA
characteristic Symbol Min Typ Max Unit
Operating Voltage V Operating Current I O/P Driving Current I O/P Sinking Current I Effect Decoding Frequency Variation F
tolerance
DD
DD
drive
sink
1.5 4.0 5.0 V
-- -- 3.0 mA 1----mA 1----mA
-20 -- 20 %
PIN DESCRIPTION
1. TX-2B
Pin No. Symbol Description
1 RIGHT The rightward function will be selected, if this pin is connected to GND 2 TEST This pin is used for testing mode 3 GND Negative power supply 4 BACKWARD The backward function will be selected, if this pin is connected to GND 5 FORWARD The forward function will be selected, if this pin is connected to GND
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
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(To be continued)
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Silan Semiconductors
(Continued)
Pin No. Symbol Description
6 TURBO The turbo function will be selected if this pin is connected to GND 7 SC Output pin of the encoding signal with carrier frequency 8 SO Output pin of the encoding signal without carrier frequency
9VDDPositive power supply 10 PC Power control output pin 11 OSCO Oscillator output pin 12 OSCI Oscillator input pin 13 FOSC This pin is used for testing mode 14 LEFT The leftward function will be selected, if this pin is connected to GND
TX-2B/RX-2B
2. RX-2B
Pin No. Symbol Description
1 VO2 Inverter 2 output pin for power amplify
2 GND Negative power supply
3 SI Input pin of the encoding signal
4 OSCI Oscillator input pin
5 OSCO Oscillator output pin
6 RIGHT Rightward output pin
7 LEFT Leftward output pin
8 ROB Rightward function disable, if this pin is connected to GND
9 LDB Leftward function disable, if this pin is connected to GND 10 BACKWARD Backward output pin 11 FORWARD Forward output pin 12 TURBO TURBO output pin 13 V 14 VI1 Inverter 1 input pin for power amplify 15 VO1 Inverter 1 output pin for power amplify 16 VI2 Inverter 2 input pin for power amplify
DD
Positive power supply
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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Silan Semiconductors
CODE FORMAT
1. ENCODE RULE
(A).Bit Format (W1 is used for function codes,W2 for start codes)
1KHz
TX-2B/RX-2B
W1
W2
1KHz 50% Duty cycle
500Hz 75% Duty cycle
(B).Date Format
W2 W2 W2 W2 (n) X W1 W2 W2 W2 W2 (n)X W1 W2 W2 W2 W2
W2 W2 W2 W2
1234
start code
W2
1234
W1W1 W1 W1
1word
nxW1
function code
W1 W1
n-th
W2 W2 W2
Number Of Function Code ( N) W1 Function Key Decode Result
4 End Code 10 Forward Forward 16 Forward & Turbo Forward 22 Turbo Turbo 28 Turbo & Forward & Left Forward & Left 34 Turbo & Forward & Right Forward & Right 40 Backward Backward 46 Backward & Right Backward & Right 52 Backward & Left Backward & Left 58 Left Left 64 Right Right
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
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Silan Semiconductors
2. ENCODE/DECODE TIMING
Any function key
TX-2B/RX-2B
Encode output
Decode output
SI
Decode output
1st word 2nd word 3rd word 12345678
end code
9ms9ms
8ms
T=17ms+(nW1)x1ms
(n) W1
T
8ms
1ms
TESTING CIRCUIT
(The oscillator frequency of TX-2B, RX-2B is 128KHz, the oscillator resistor is 160Kand 250Krespectively)
forward
f
osc
=128kHz
turbo
14 13 12 11 810 9
VCC=3V
F
100
1 2 3 4 75 6 1 2 3 4 75 6 8
TX-2B RX-2B
14 13 12 11 10 91516
backward
left
right
backward
turbo
forward
f
osc
=128kHz
right
left
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Rev: 1.0 2002.03.29
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Silan Semiconductors
TYPICAL APPLICATION CIRCUIT
TRANSMITTER
R
14 13 12 11 10 9 8
1 2 3 4 5 6 7
osc
=500k
TX-2B
TX-2B/RX-2B
V
R.F.
CIRCUIT
CC
¡
SI
RECEIVER
V
CC
R.F.
CIRCUIT
GND
100
right
left
F
4.3V
backward
15 14 13 12 11 10 916
1 2 3 4 5 6 7 8
turbo
forward
power switch
RX-2B
500k
¡
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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Silan Semiconductors
INFRARED APPLICATION CIRCUIT
TRANSMITTER
F
DC:3V
100
f
osc
=114kHz
TX-2B/RX-2B
¡
RECEIVER
DC:5V
14 13 12 11 10 9 8
TX-2B
2 3 4 5 6 71
Left
Right
16 15 14 13 12 11 910
F
100
1 2 3 4 5 6 87
RX-2B
f
osc
Backw
=114KHz
ard
Frontwar
1~4.7
Photo Diode
d
Turbo
C8050
100K
1815
¡
OUT
IR
Receiver
V
DD
GND
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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Silan Semiconductors
RECOMMENDED APPLICATION CIRCUIT
1
2
14
13
LR
LED
1.5k
TX-2B/RX-2B
VDD=9V
¡
3
B
4
F
5
TURBO
6
7 8
TX-2B
12
11
10
¡
¡
390
220k
XTAL
Rosc=160K
9
203P
F
47
27MHz
3.0V
Q1
C945
L1
203P
H
2.2 47P
68P
¡
100
¡
68P
33K
2.2
Q2
C945
L2
H
151P
L4
H
6.8 L3
7T 0.3mm ()
x 5mm(Core)
¡
151P
100
203P
103P
203P
222P
C2 47P
F
Q1
L1
1.1
¡
820
C1 102P
1
¡
3.3k
2
F
4.7
3.9MO
180k
¡
R2
3
4
RX-2B
5
Rosc=250K
right
6
left
7
8
4P
7T0.3mm ()
x 5mm(Core)
L2
C3 18PC4203P
3.3k
¡
¡
220F
/16V
3.3k
104P
103P
16
390
¡
15
14
501P
V
DD1
=12V,R=330 =9V,R=220
470
F
/16V
¡
¡
1N4148
R1
¡
1k
C945
1k
¡
1kO
V
DD1
3.0V
330
¡
¡
3.9M
13
turbo
12
forward
11
backward
10
9
R3
¡
1k
C945 C945
Q1: C9018,C1815,C380,C382 Q2,Q3,Q4: 5610,C8550,B772 Q5,Q6: C8050,5609,D882 Q7,Q8: B564,C8550,B772 Q9,Q10: D471,C8050,D882
Q3
Q2
C945
Q5
473P
R1,R2,R3,R4=80~150¡,are changeable with the V V
DD2.
Q7 Q8
M
Q9 Q10
473P
V
DD1
100
F
/16V
Q4
R2
M
C945
Q6
DD1
and
R4
1k
104P
V
DD2
¡
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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Silan Semiconductors
PACKAGE OUTLINE
DIP-14-300-2.54 UNIT: mm
2.54
0.25
B
6.35
TX-2B/RX-2B
0.05
B
7.62
0.25
19.55B0.3
0.5MIN
0.46B0.08
1.52
4.36MAX3.00MIN
2.40MAX
15 degree
DIP-16-300-2.54 UNIT: mm
2.54
0.05
0.25
B
6.35
0.5MIN
19.55B0.3
7.62
1.52
4.36MAX3.00MIN
B
0.25
15 degree
0.99B0.3
0.46B0.08
1.27MAX
HANGZHOU SILAN MICROELECTRONICS JOINT-STOCK CO.,LTD
Rev: 1.0 2002.03.29
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