Datasheet RX1214B350Y Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

RX1214B350Y

NPN microwave power transistor

Product specification
Superseded data of November 1994

1997 Feb 18

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

FEATURES

• Suitable for short and medium
pulse applications up to 1 ms/10%

• Internal input prematching
networks allow an easier design of
circuits

• Diffused emitter ballasting resistors
improve ruggedness

• Interdigitated emitter-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power
sharing and reduces thermal
resistance.

APPLICATIONS

Common base, class C, broadband,
pulsed power amplifiers for L-Band
radar applications in the

1.2 to 1.4 GHz band. Also suitable for

medium pulse, heavy duty operation
within this band.

DESCRIPTION

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common base class C

mb

broadband amplifier.

MODE OF

OPERATION

Class C t

CONDITIONS

= 130 µs;

p

f

(GHz)

1.2 to 1.4 50 280 ≥7 ≥40

δ =6%

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

2

V

CC

(V)

33

MAM045

P

(W)

b

G

L

(dB)

c

e

η

p

C

(%)

NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package with base connected to

Fig.1 Simplified outline and symbol.

flange.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.2 mm from ceramic.

collector-base voltage open emitter − 65 V
collector-emitter voltage open base − 20 V
collector-emitter voltage RBE=0Ω−65 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 130 µs; δ≤6% − 25 A
total power dissipation Tmb<75°C;

− 750 W

tp≤ 30 µs; δ≤1%
storage temperature −65 200 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

200

T

amb

MGA259

(

800

handbook, halfpage

P

tot

(W)

600

400

200

0
–100 0 100 300

P

= 750W; tp≤ 30 µs; δ≤1%.

tot max

Fig.2 Maximum power dissipation derating as a

function of mounting base temperature.

o

C)

1997 Feb 18 3

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See

“Mounting recommendations in the General part of handbook SC19a”

2. Equivalent thermal impedance under pulsed microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MAX. UNIT

I

CBO

I

EBO

thermal resistance from junction to mounting base Tj= 120 °C 1.2 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp= 130 µs; δ = 6%;

0.17 K/W

Tj=110°C; notes 1 and 2

.

collector cut-off current VCB=50V; IE= 0 30 mA
emitter cut-off current VEB= 1.5 V; IC=0 3 mA

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

Class C t

p

CONDITIONS

= 130 µs; δ = 6%; note 2 1.2 to 1.4 50 280 ≥7;

=25°C in a common base test circuit as shown in Fig.3.

mb

V

f

(GHz)

CC

(V)

note 1

P

(W)

L

G

(dB)

typ. 8

Notes

1. V

during pulse.

CC

2. Operating conditions and performances for other pulse formats can be made available on request.

p

η

C

(%)

≥40;
typ. 44

1997 Feb 18 4

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

handbook, full pagewidth

handbook, full pagewidth

40 mm

V

CC

30 mm 30 mm

4

10.5

2

1

2.5

12.5

0.6
4

12

C3

10

12

7

41

8

40 mm

2.5

MBC721

V

CC

L1

input

L2

10.3

Fig.3 Broadband test circuit.

1997 Feb 18 5

C5

C6

C4

C2

L3

R1

C1

MBC722

output

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

List of components (see Fig.3)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

L1, L2, L3 3 turns 0.65 mm diameter

copper wire
C1 capacitor 100 pF ATC, ref. 100B101KP50X
C2 tantalum capacitor 10 µF, 50 V
C3 electrolytic capacitor 470 µF, 63 V
C4 feedthrough bypass capacitor Erie, ref.1250-003
C5 variable gigatrim capacitor 0.8 - 8 pF Tekelec, ref.729.1
C6 capacitor 4.7 nF
R1 resistor 4.7 Ω

The test jig consists of two circuits (input and output), each being 30 mm x 40 mm in size. The two circuits are mounted
on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor
can be mounted. The mounting surface must be lapped to a surface roughness of Ra <0.5 µm and the sum of the depth
of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting
face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim
under the leads, close to the body of the transistor.

int dia.=4mm;
length of turn = 3 mm

10

handbook, halfpage

G

p

(dB)

8

6

4

2

0

1.1 1.2 1.3 1.5

Class C pulse operation; tp= 130 µs; δ = 6%.
VCC= 50 V; PO= 280 W.
Broadband test circuit as shown in Fig.3.

Fig.4 Power gain as a function of frequency.

1.4

MGA261

f (GHz)

50

handbook, halfpage

η

C

(%)

48

46

44

42

40

1.1 1.2 1.3 1.5

Class C pulse operation; tp= 130 µs; δ = 6%.
VCC= 50 V; PO= 280 W.
Broadband test circuit as shown in Fig.3.

Fig.5 Collector efficiency as a function

of frequency.

1.4

MGA260

f (GHz)

1997 Feb 18 6

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

handbook, full pagewidth

VCC= 50 V; ZO=5Ω; PO= 280 W.

Fig.6 Input impedance as a function of frequency, associated with optimum load impedance.

1

0.5

1.2 GHz

Z

i

0.2

+ j

0

– j

0.2

1.4 GHz

0.5

1.3 GHz

0.50.2 10152

1

2

5

10

∞

10

5

2

MBC918

handbook, full pagewidth

VCC= 50 V; ZO=5Ω; PO= 280 W.

Fig.7 Optimum load impedance as a function of frequency, associated with input impedance.

1

0.5

0.2

+ j

0

– j

0.2

0.5

Z

L

1.4 GHz

0.50.2

1.3 GHz

11052

1.2 GHz

1

2

5

10

∞

10

5

2

MBC919

1997 Feb 18 7

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

PACKAGE OUTLINE

handbook, full pagewidth

3.3

2.9

0.15 max

3.3

seating plane

8.25

12.85 max

23 max

3.7

max

16.5

6

max

1.6 max

3

9.85
max

MBC881

2.7
min

10.3

10.0

2.7
min

1

2

Dimensions in mm.
Torque on nut: max 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screw: 19 mm.

Fig.8 SOT439A.

1997 Feb 18 8

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of this specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 18 9

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

NOTES

1997 Feb 18 10

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B350Y

NOTES

1997 Feb 18 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 18 Document order number: 9397 75001737