Datasheet RX1214B300Y Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

RX1214B300Y

NPN microwave power transistor

Product specification
Supersedes data of June 1992

1997 Feb 19

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry improves power sharing and reduces
thermal resistance

• Internal input and output matching networks for an easy
circuit design.

APPLICATIONS

• Common base class-C wideband amplifiers operating
under pulsed conditions, recommended for L-band
radar applications.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package with the base
connected to the flange.

PINNING - SOT439A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

lumns

Top view

Fig.1 Simplified outline and symbol.

1

c

b

33

2

MAM045

e

QUICK REFERENCE DATA

Microwave performance at T

MODE OF OPERATION

Class-C

= 150 µs; δ =5%

t

p

≤ 25 °C in a common base class-C wideband amplifier.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

G

P

(dB)

η

(%)

C

1.2 to 1.4 50 ≥250 ≥7 ≥35 see Fig 6

Zi; Z

(Ω)

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

L

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 65 V
collector-emitter voltage RBE=0Ω−60 V
emitter-base voltage open collector − 3V
collector current (DC) tp≤ 150 µs; δ =5% − 21 A
total power dissipation tp≤ 150 µs; δ =5%;

− 570 W

Tmb=75°C
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.2 mm from case; t ≤ 10 s − 235 °C

800

handbook, halfpage

P

tot

(W)

600

400

200

0

−50 0 200

tp= 150µs; δ =5%

MGD976

50 100 150

Tmb (°C)

Fig.2 Power derating curve.

1997 Feb 19 3

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

THERMAL CHARACTERISTICS

T

= 100 °C unless otherwise specified

j

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Z

th j-h

Notes

1. See “

2. Equivalent thermal impedance under nominal pulse microwave operating conditions.

CHARACTERISTICS

=25°C unless otherwise specified

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

I

CBO

I

EBO

thermal resistance from junction to mounting-base 0.8 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
thermal impedance from junction to heatsink tp= 150 µs; δ =5%;

0.22 K/W

notes 1 and 2

Mounting recommendations in the General part of handbook SC19a”

.

collector-base breakdown voltage IC= 140 mA; IE=0 65 − V
collector-emitter breakdown voltage IC= 140 mA; RBE=0Ω 60 − V
emitter-base breakdown voltage IC= 0; IE=20mA 3 − V
collector cut-off current VCB= 50 V; IE=0 − 14 mA
emitter cut-off current VEB= 1.5 V; IC=0 − 1.4 mA

APPLICATION INFORMATION

Microwave performance at T

MODE OF OPERATION

Pulsed

= 150 µs; δ =5%

t

p

t

= 300 µs; δ = 10 % 1.2 to 1.4 50 typ. 300 typ. 7.5 typ. 35 see Fig 6

p

≤ 25 °C in a common base class C wideband amplifier.

mb

f

(GHz)

V

(V)

CC

P

(W)

L

1.2 to 1.4 50 ≥250
typ. 320

G

P

(dB)

≥7

typ. 8

η

C

(%)

≥35

typ. 40

see Fig 6

Zi; Z

(Ω)

L

1997 Feb 19 4

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

handbook, full pagewidth

2.5

0.59

input
50 Ω

2

1

Dimensions in mm.
Substrate: Epsilam printed-circuit board.
Thickness: 0.635 mm.
Permittivity: εr= 10.

12.5

12

4

4 10.5

1.5

10

1.5 0.5 1

1.5

3

2 5 3.5 4

1

Fig.3 Wideband test circuit board for 1.2 to1.4 GHz application.

0.59

1.5

output

50 Ω

MGK065

400

handbook, halfpage

P

L

(W)

300

200

1.18

tp= 150 µs; δ =5%.

1.26 1.51.42

Pin = 60 W

40 W

1.34

Fig.4 Load power as a function of frequency;

typical values.

MBH904

f (GHz)

10

handbook, halfpage

G

p

(dB)

9

8

7

6

1.18

tp= 150 µs; δ =5%.

1.26 1.42

1.34

f (GHz)

Fig.5 Power gain as a function of frequency;

typical values.

MBH903

1997 Feb 19 5

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

handbook, full pagewidth

0.5

0.2

+ j

0

–
j

Zo=5Ω; VCC= 50 V; PL= 250 W; Tmb=25°C; tp= 150 µs; δ = 5 %; class C operation.

Z

0.2

Z

1.2

i

1.3

1.4 GHz

0.5 1 10520.2

1.4

1.3

L

1.2 GHz

0.5

Fig.6 Input and optimum load impedances as functions of frequency; typical values.

1

2

5

10

∞

10

5

2

1

MCD631

1997 Feb 19 6

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

PACKAGE OUTLINE

handbook, full pagewidth

3.3

2.9

0.15 max

3.3

seating plane

8.25

12.85 max

23 max

3.7

max

16.5

6

max

1.6 max

3

9.85
max

MBC881

2.7

min

10.3

10.0

2.7

min

1

2

Dimensions in mm.
Torque on nut: Max. 0.4 Nm
Recommended screw: M3
Recommended pitch for mounting screw: 19 mm.

Fig.7 SOT439A.

1997 Feb 19 7

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

DEFINITIONS

Data Sheet Status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Feb 19 8

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

NOTES

1997 Feb 19 9

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

NOTES

1997 Feb 19 10

Philips Semiconductors Product specification

NPN microwave power transistor RX1214B300Y

NOTES

1997 Feb 19 11

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Printed in The Netherlands 127147/00/02/pp12 Date of release: 1997 Feb 19 Document order number: 9397 750 01704