Datasheet RW1C015UN Datasheet (ROHM)

1.5V Drive Nch MOSFET

RW1C015UN

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) High power package.
Low voltage drive. (1.5V)

zApplications

Switching

zPackaging specifications zInner circuit

Type

RW1C015UN

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

DSS
GSS

D

DP

S

SP

D

Limits Unit

20

±10

±1.5

∗1

±3

0.5

∗1
∗2

3

0.7

VV
VV
AI
AI
AI
AI

WP

°CTch 150
°CTstg −55 to +150

zThermal resistance

Parameter Symbol Limits Unit

Channel to ambient

∗ When mounted on a ceramic board

Rth (ch-a) 179

∗

°C / W

WEMT6

(6) (5) (4)

(1) (2) (3)

Abbreviated symbol : PS

∗2

(2)(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(4)(5)(6)

∗1

(3)

(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain

www.rohm.com

1/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.A

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

∗Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

∗

∗

∗

∗

∗

g

∗

∗

∗

Min. Typ. Max.

−−±10 µAV

20 −−VID= 1mA, VGS=0V

−−1 µAV

0.3 − 1.0 V V

− 130 180 I

− 170 240 mΩ

− 300 600 I

1.6 −−SV

− 110 − pF V

− 1815− pF V

−

−

−

−

−

−

−

−−

− pF f=1MHz

5

− ns

5

− ns

20

− ns

3

− ns

1.8

− nC

0.3

−

0.3

Min. Typ. Max.

−−1.2 VForward voltage IS= 1.5A, VGS=0V

Unit

mΩ

D

I

D

Conditions

= ±10V, VDS=0V

GS

= 20V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 1.5A, VGS= 4.5V

= 1.5A, VGS= 2.5V
mΩ− 220 310 ID= 0.8A, VGS= 1.8V
mΩ

= 0.3A, VGS= 1.5V

D

= 10V, ID= 1.5A

DS

= 10V

DS

=0V

GS

V

DD

10V

ID= 1A
V

GS

= 4.5V

L

10Ω

R

G

=10Ω

R

10V

V

DD

I

= 1.5A

D

nC
nC

Unit

V

GS

R

L

R

G

= 4.5V

6.7Ω
=10Ω

Conditions

Data Sheet RW1C015UN

www.rohm.com

2/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.A

V

V

V

zElectrical characteristics curves

1.5

[A]

D

1

0.5

DRAIN CURRENT : I

0

0 0.2 0.4 0.6 0.8 1

VGS= 10
VGS= 4.5
VGS= 2.5

VGS= 1.8V

VGS= 1. 5V

VGS= 1. 3V

VGS= 1. 2V

Ta=25°C
Pulsed

1.5
VGS= 4.5V

= 1.8V

V

[A]

D

DRAIN CURRENT : I

GS

1

0.5

0

0246810

VGS= 1.5V

VGS= 1. 1V

VGS= 1. 3V

Ta= 25°C
Pulsed

10

VDS= 10V
Pulsed

[A]

D

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

0.1

DRAIN CURRENT : I

0.01

0.001

00.5 11.52

Data Sheet RW1C015UN

DRAIN-SOURCE VOLTAGE : VDS[V] DRAIN-SOURCE VOLTAGE : VDS[V]

Fi g.1 Typical Output Char acteri stic s(Ⅰ) Fig .2 Typical Output Characteri stics(Ⅱ)

10000

Ta= 25°C
Pulsed

]

Ω

1000

(on) [m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.4 Static Dr ain- Sourc e On-State

Resis tance vs. Dr ain Cur rent(Ⅰ)

VGS= 1. 5V

= 1. 8V

V

GS

= 2. 5V

V

GS

= 4. 5V

V

GS

[A]

D

10000

VGS= 4. 5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.5 Static Dr ain- Sourc e On-State

Resis tance vs. Dr ain Cur rent(Ⅱ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

GATE-SOURCE VOLTAGE : VGS[V]

Fi g.3 Typical Trans fer C haract eri stic s

10000

VGS= 2. 5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESISTANCE : R

STATIC DRAIN-SOURCE ON-STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.6 Stati c Dr ain-Sour ce On- State

Res is tance vs. Dr ain Cur rent(Ⅲ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

10000

VGS= 1.8V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC D RAIN-SOU RCE ON -STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.7 Static Dr ain- Sourc e On-State

Resis tance vs. Dr ain Cur rent(Ⅳ)

www.rohm.com

3/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

10000

VGS= 1. 5V
Pulsed

]

Ω

1000

(on) [m

DS

100

RESIST ANCE : R

STATIC D RAIN-SOU RCE ON -STATE

10

0.01 0.1 1 10

DRAIN-CURRENT : I

Fi g.8 Static Dr ain- Sourc e On-State

Resis tance vs. Dr ain Cur rent(Ⅴ)

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

[A]

D

10

VDS= 10V
Pulsed

1

0.1

FOR WARD TR ANSF ER AD MIT TANCE : | Yfs| [S]

0.01 0.1 1 10

DRAIN-CURRENT : ID[A]

Fi g.9 Forwar d Transf er Admittanc e
vs. Drain Cur rent

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

2009.05 - Rev.A

Fig.1-1 Switching Time Measurement Circuit

%

%

V
V

Pulse Width

Fig.2-1 Gate Charge Measurement Circuit

S

Fig.2-2 Gate Charge Waveform

V

Data Sheet RW1C015UN

10

VGS=0V
Pulsed

1

0.1

REVER SE DRAIN CURR ENT : Is [A]

0.01
0 0.5 1 1.5

SOURCE-DRAIN VOLTAGE : VSD [V]

Fi g.10 R evers e Drai n Curr ent
vs. Sours e-D rain Voltage

5

[V]

GS

4

3

2

1

GATE-SOU RCE VOLTAGE : V

0

00.511.52

TOTAL GATE C HARGE : Qg [nC]

Fi g.13 D ynamic I nput Char acteri stic s

zMeasurement circuit

Ta= 125°C

Ta=75°C
Ta=25°C

Ta= -25°C

Ta= 25°C
V
I

D

R
Pulsed

= 10V

DD

= 1. 5A

=10Ω

G

600

]

500

Ω

400

(ON)[m

DS

300

200

RESIST ANCE : R

100

STATIC DRAIN-SOURCE ON-STATE

0

0246810

GATE-SOURCE VOLTAGE : VGS[V]

Fi g.11 Stat ic D rain- Source O n-State
Resi stance vs. Gate Source Voltag e

1000

Ta= 25°C
f=1MH z
V

GS

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

ID= 0. 8A

ID= 1.5A

=0V

Crss

DRAIN-SOURCE VOLTAGE : V

Fi g.14 T ypical Capaci tance
vs. Drain- Source Voltag e

Ciss

Coss

Ta= 25°C
Pulsed

[V]

DS

1000

td(off)

t

100

10

SWITC HING TIM E : t [ns]

1

0.01 0.1 1 10

Fi g.12 Swi tching Char acteri stic s

f

td(on)

t

r

DRAIN-CURRENT : ID[A]

Ta= 25°C

= 10V

V

DD

V

=4.5V

GS

R

=10Ω

G

Pulsed

VGS

RG

D

I

D.U.T.

RL

VDD

VDS

90%

10%

GS

DS

10%

t

d(on)

90%

t

r

t

on

Fig.1-2 Switching Waveforms

50%50%

10

t

d(off)

90
t

r

t

off

V

G

V

I

G (Const.)

GS

R

G

I

D.U.T.

D

V

D

R

L

GS

Q

V

DD

Q

g

gs

Q

gd

Charge

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

www.rohm.com

4/4

c

○

2009 ROHM Co., Ltd. All rights reserved.

2009.05 - Rev.A

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other par ties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.

Notice

The Products specied in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, ofce-automation equipment, commu­nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, re or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machiner y, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.

Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

www.rohm.com
© 2009 ROHM Co., Ltd. All rights reserved.

http://www.rohm.com/contact/

R0039

A