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RURU80100
Data Sheet January 2000
80A, 1000V Ultrafast Diode
The RUR U80100 is an ultr afast diode with soft recovery
characteristics (t
< 125ns). It has low forward voltage drop
rr
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and ultrafast recovery with soft recovery characteristic
minimizes ringing and electrical noise in many power
switching circuits reducing power loss in the switching
transistors.
Formerly developmental type TA09887.
Ordering Information
PART NUMBER PACKAGE BRAND
RURU80100 TO-218 RURU80100
NOTE: When ordering, use the entire part number.
Symbol
K
File Number 3375.3
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<125ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
CATHODE
(FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 60oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FRM
FSM
STG
RURU80100 UNITS
1000 V
1000 V
R
D
AVL
, T
1000 V
80 A
160 A
500 A
180 W
50 mJ
-65 to 175
J
o
C
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RURU80100
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 80A - - 1.9 V
IF = 80A, TC = 150oC - - 1.7 V
I
R
VR = 1000V - - 250 µA
VR = 1000V, TC = 150oC--2mA
t
rr
IF = 1A, dIF/dt = 100A/µs - - 125 ns
IF = 80A, dIF/dt = 100A/µs - - 200 ns
t
a
t
b
R
θJC
IF = 80A, dIF/dt = 100A/µs - 90 - ns
IF = 80A, dIF/dt = 100A/µs - 65 - ns
- - 0.83
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
o
C/W
Typical Performance Curves
400
100
175oC
10
, FORWARD CURRENT (A)
F
I
1
0
0.5 1.0 1.5 2.0 2.5 3.0
VF, FORWARD VOLTAGE (V)
100oC
25oC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
, REVERSE CURRENT (µA)
R
I
0.01
100
1.0
0.1
175oC
10
100oC
25oC
0
200 400 600 800
V
, REVERSE VOLTAGE (V)
R
1000
2
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Typical Performance Curves (Continued)
RURU80100
200
175
150
125
100
t, TIME (ns)
75
50
25
0
1
t
rr
t
a
t
b
10 80
IF, FORWARD CURRENT (A)
100
80
60
40
20
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
5025
DC
SQ. WAVE
75 100 125 150 175
, CASE TEMPERATURE (oC)
T
C
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25 I
I
RM
RM
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1.6A
L = 40mH
R < 0.1Ω
= 1/2LI2 [V
E
AVL
= IGBT (BV
Q
1
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)]
)
CURRENT
DUT
SENSE
LR
+
V
V
-
DD
DD
IV
V
AVL
I
L
t
0
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT ANDVOLTAGE
WAVEFORMS
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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