
RURU50100
Data Sheet January 2000
50A, 1000V Ultrafast Diode
The RUR U50100 is an ultr afast diode with soft recovery
characteristics (t
< 125ns). It has low forward voltage drop
rr
and is of silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and ultrafast recovery with soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, reducing power loss in the switching
transistors.
Formerly developmental type TA09910.
Ordering Information
PART NUMBER PACKAGE BRAND
RURU50100 TO-218 RURU50100
NOTE: When ordering, use the entire part number.
File Number 3376.3
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<125ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 90oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC, Unless Otherwise Specified
C
CATHODE
(FLANGE)
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RURU50100 UNITS
1000 V
1000 V
R
D
J
1000 V
50 A
100 A
500 A
150 W
40 mJ
-65 to 175
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000

RURU50100
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 50A - - 1.9 V
IF = 50A, TC = 150oC - - 1.7 V
I
R
VR = 1000V - - 250 µA
VR = 1000V, TC = 150oC - - 1.5 mA
t
rr
IF = 1A, dIF/dt = 100A/µs - - 125 ns
IF = 50A, dIF/dt = 100A/µs - - 200 ns
t
a
t
b
R
θJC
IF = 50A, dIF/dt = 100A/µs - 110 - ns
IF = 50A, dIF/dt = 100A/µs - 65 - ns
- - 1.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
o
C/W
Typical Performance Curves
300
100
175oC
10
100oC
, FORWARD CURRENT (A)
F
I
1
0.5 1.0 1.5 2.0 2.5 3.0
0
25oC
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
100
, REVERSE CURRENT (µA)
R
I
0.01
1.0
0.1
175oC
10
100oC
25oC
0
200 400 600 800 1000
, REVERSE VOLTAGE (V)
V
R
2

Typical Performance Curves (Continued)
RURU50100
200
175
150
125
100
t, TIME (ns)
75
50
25
0
1
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
10 50
60
50
40
30
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
25 50 75 100
SQ. WAVE
T
, CASE TEMPERATURE (oC)
C
DC
125 150
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25 I
I
RM
175
RM
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1.4A
L = 40mH
R < 0.1Ω
= 1/2LI2 [V
E
AVL
= IGBT (BV
Q
1
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)]
)
CURRENT
DUT
SENSE
LR
+
V
V
-
DD
DD
IV
V
AVL
I
L
t
0
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENTAND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader iscautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
3