Datasheet RURU150100, RURU15070, RURU15080, RURU15090 Datasheet (Intersil)

RURU15070, RURU15080,

RURU15090, RURU150100

April 1995

Features

• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . . . . . .<125ns

• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175

• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Description

RURU15070, RURU15080 and RURU15090 and RURU150100 are
ultrafast diodes with soft recovery characteristics (t
They have low forward voltage drop and are silicon nitride passi­vated ion-implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies and
other power switching applications. Their low stored charge and
ultrafast recovery with soft recovery characteristic minimizes ring­ing and electrical noise in many power switching circuits reducing
power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER PACKAGE BRAND

RURU15070 TO-218 RURU15070
RURU15080 TO-218 RURU15080
RURU15090 TO-218 RURU15090
RURU150100 TO-218 RUR150100

NOTE: When ordering, use the entire part number.

< 125ns).

RR

150A, 700V - 1000V Ultrafast Diodes

Package

JEDEC STYLE SINGLE LEAD TO-218

o

C

CATHODE
(FLANGE)

Symbol

K

A

ANODE

Absolute Maximum Ratings T

Peak Repetitive Reverse Voltage. . . . . . . . . . . . . .V

Working Peak Reverse Voltage . . . . . . . . . . . . . . V

DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . .V

Average Rectified Forward Current . . . . . . . . . . . .I

(TC = +65oC)

Repetitive Peak Surge Current. . . . . . . . . . . . . . . . I

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . . . . . . . I

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . .P

Avalanche Energy (L = 40mH). . . . . . . . . . . . . . . . E

Operating and Storage Temperature . . . . . . . . T

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

= +25oC, Unless Otherwise Specified

C

RURU15070 RURU15080 RURU15090 RURU150100 UNITS

RRM

RWM

R

F(AV)

FSM

FSM

D

AVL

, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175

STG

700 800 900 1000 V
700 800 900 1000 V
700 800 900 1000 V
150 150 150 150 A

300 300 300 300 A

1500 1500 1500 1500 A

375 375 375 375 W

50 50 50 50 mj

5-1

File Number

o

C

3202.2

Specifications RURU15070, RURU15080, RURU15090, RURU150100

Electrical Specifications T

= +25oC, Unless Otherwise Specified

C

LIMITS

RURU15070 RURU15080 RURU15090 RURU150100

SYMBOL TEST CONDITION

V

F

V

F

I

R

IF = 150A, TC = +25oC - - 1.9 - - 1.9 - - 1.9 - - 1.9 V
IF = 150A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 - - 1.7 V
VR = 700V, TC = +25oC --500--------- µA

MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX

VR = 800V, TC = +25oC -----500------ µA

= 900V, TC = +25oC --------500--- µA

V

R

V

= 1000V, TC = +25oC -----------500µA

R

I

R

VR = 700V , TC = +150oC --3.0---------mA

= 800V , TC = +150oC -----3.0------mA

V

R

V

= 900V , TC = +150oC --------3.0---mA

R

VR = 1000V , TC = +150oC -----------3.0mA

t

RR

IF = 1A, dIF/dt = 100A/µs - - 125 - - 125 - - 125 - - 125 ns
IF = 150A, dIF/dt = 100A/µs - - 200 - - 200 - - 200 - - 200 ns

t

A

t

B

R

θJC

IF = 150A, dIF/d t = 100A/µs - 100 - - 100 - - 100 - - 100 - ns
IF = 150A, dIF/dt = 100A/µs - 75 - - 75 - - 75 - - 75 - ns

- - 0.4 - - 0.4 - - 0.4 - - 0.4oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300µs, D = 2%).

= Instantaneous reverse current.

I

R

= Reverse recovery time (See Figure 2), summation of tA + tB.

t

RR

t

= Time to reach peak reverse current (See Figure 2).

A

= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

t

B

= Thermal resistance junction to case.

R

θJC

E

= Controlled avalanche energy (See Figures 7 and 8).

AVL

pw = pulse width.

D = duty cycle.

UNITS

V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt

= SELF INDUCTANCE OF R

L

1

+ L

LOOP

+V

1

0

t

2

t

1

0

-V

2

F

4

t

3

R

FIGURE 1. t

R

1

Q

1

R

2

Q

3

3

TEST CIRCUIT

RR

C1

+V

3

t1≥ 5t

R

t2 > t
t3 > 0

L

R

4

1
4

RR

≤

DUT

A(MAX)

t

A(MIN)

10

I

F

0

FIGURE 2. t

dI

F

dt

V

WAVEFORMS AND DEFINITIONS

RR

RM

t

RR

t

A

t

B

0.25 I

RM

I

RM

V

R

Q

2

L

LOOP

Q

4

-V

4

5-2

RURU15070, RURU15080, RURU15090, RURU150100

Typical Performance Curves

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD

VOLTAGE DROP

FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD

CURRENT

I

= 1A

MAX

L = 40mH
R < 0.1Ω

= 1/2LI2 [V

E

AVL

& Q2 ARE 1000V MOSFETs

Q

1

AVL

/(V

AVL

- VDD)]
Q

L

1

R

FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE

FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES

+

V

DD

12V

12V

130Ω

Q

2

130Ω

1MΩ

DUT

CURRENT
SENSE

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT

V

AVL

I

L

IV

V

DD

­t

0

I

L

t

1

t

2

FIGURE 8. AVALANCHE CURRENT AND VOL T AGE W A VEFORMS

5-3

t

RURU15070, RURU15080, RURU15090, RURU150100

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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