Datasheet RURU10060 Datasheet (Intersil)

Page 1
RURU10060
Data Sheet January 2000
100A, 600V Ultrafast Diode
The RURU10060 is an ultrafast diode with soft recovery characteristics (t
rr
and is of silicon nitride passivated ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other powerswitchingapplications.Itslow stored charge and ultrafast recovery with soft recovery characteristic minimizes ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Formerly development type TA49019.
Ordering Information
PART NUMBER PACKAGE BRAND
RURU10060 TO-218 RURU10060
NOTE: When ordering, use the entire part number.
File Number 3546.3
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . .<80ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 70oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC
C
CATHODE (FLANGE)
RRM
RWM
F(AV)
FRM
FSM
STG
AVL
, T
RURU10060 UNITS
600 V 600 V
R
D
J
600 V 100 A
200 A
1000 A
210 W
50 mJ
-65 to 175
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
Page 2
RURU10060
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 100A - - 1.6 V IF = 100A, TC = 150oC - - 1.4 V
I
R
VR = 600V - - 250 µA VR = 600V, TC = 150oC - - 2.0 mA
t
rr
IF = 1A, dIF/dt = 100A/µs--80ns IF = 100A, dIF/dt = 100A/µs - - 100 ns
t
a
t
b
R
θJC
IF = 100A, dIF/dt = 100A/µs - 45 - ns IF = 100A, dIF/dt = 100A/µs - 25 - ns
- - 0.71
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current. trr= Reverse recovery time summation of ta+tb.
ta = Time to reach peak reverse current (See Figure 6). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
500
100
10
100oC
, FORWARD CURRENT (A)
F
I
1
0 0.5 1 1.5 2.52
175oC
25oC
VF, FORWARD VOLTAGE (V)
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
100
10
1
, REVERSE CURRENT A)
0.1
R
I
0.01 0 100 200 300 500 600400
VR, REVERSE VOLTAGE (V)
100
175oC
o
25oC
C
2
Page 3
Typical Performance Curves (Continued)
100
TC = 25oC, dIF/dt = 100A/µs
80
RURU10060
100
80
DC
60
40
t, RECOVERY TIMES (ns)
20
0
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
100101
60
40
20
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
25 50 75 100 150 175125
SQ. WAVE
TC, CASE TEMPERATURE (oC)
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND RG CONTROL dIF/dt t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
0.25 I I
RM
RM
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1.6A L = 40mH R < 0.1
= 1/2LI2 [V
E
AVL
= IGBT (BV
Q
1
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)] )
CURRENT
DUT
SENSE
LR
V
AVL
+ V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnishedby Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
3
Loading...