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RURU100120
Data Sheet January 2000
100A, 1200V Ultrafast Diode
The RURU100120 is an ultrafast diode with soft recovery
characteristics (t
< 125ns). It has low forward voltage drop
rr
and is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and ultrafast recovery with soft recovery characteristic
minimize ringing and electrical noise in many power
switching circuits, thus reducing power loss in the switching
transistors.
Formally developmental type TA49020.
Ordering Information
PART NUMBER PACKAGE BRAND
RURU100120 TO-218 URU100120
NOTE: When ordering, use the entire part number.
Symbol
K
File Number 3545.3
Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . .<125ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE SINGLE LEAD TO-218
ANODE
CATHODE
(FLANGE)
C
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 50oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figure 7 and 8) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= 25oC
C
RRM
RWM
F(AV)
FRM
FSM
STG
RURU100120 UNITS
1200 V
1200 V
1200 V
100 A
200 A
500 A
210 W
50 mJ
-65 to 175
AVL
, T
R
D
J
o
C
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RURU100120
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 100A - - 2.1 V
IF = 100A, TC = 150oC - - 1.9 V
I
R
VR = 1200V - - 250 µA
VR = 1200V, TC = 150oC--2mA
t
rr
IF = 1A, dIF/dt = 100A/µs - - 125 ns
IF = 100A, dIF/dt = 100A/µs - - 200 ns
t
a
t
b
R
θJC
IF = 100A, dIF/dt = 100A/µs - 90 - ns
IF = 100A, dIF/dt = 100A/µs - 65 - ns
- - 0.71
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 6), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 6).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 6).
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
o
C/W
Typical Performance Curves
500
100
175oC
25oC
10
, FORWARD CURRENT (A)
F
I
1
0
0.5 1
100oC
1.5 2.5 32
VF, FORWARD VOLTAGE (V)
3.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
1000
, REVERSE CURRENT (µA)
R
I
100
0.1
0.01
175oC
o
C
10
1
0
200 400 600 1000 1200800
VR, REVERSE VOLTAGE (V)
100
25oC
2
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Typical Performance Curves (Continued)
RURU100120
200
175
150
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
1
IF, FORWARD CURRENT (A)
t
rr
t
a
t
b
10
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
G
t
2
L
IGBT
DUT
CURRENT
SENSE
100
100
80
60
40
20
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
SQ. WAVE
25
50 75
TC, CASE TEMPERATURE (oC)
100
DC
125
150 175
FIGURE 4. CURRENT DERATING CURVE
dI
F
I
F
+
V
DD
-
0
dt
t
rr
t
a
t
b
0.25 I
RM
I
RM
FIGURE 5. trr TEST CIRCUIT FIGURE 6. trr WAVEFORMS AND DEFINITIONS
I = 1.6A
L = 40mH
R < 0.1Ω
E
AVL
= IGBT (BV
Q
1
= 1/2LI2 [V
R(AVL)
CES
/(V
> DUT V
Q
R(AVL)
R(AVL)
1
- VDD)]
)
CURRENT
DUT
SENSE
LR
+
V
V
-
DD
DD
IV
V
AVL
I
L
t
0
I
L
t
1
t
2
t
FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT FIGURE 8. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current bef oreplacing orders. Information furnished by Intersil is belie ved to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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