Page 1
RURP640CC, RURP650CC,
RURP660CC
April 1995
Features
• Ultrafast with Soft Recovery. . . . . . . . . . . . . . . . .<55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . .+175
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Description
The RURP640CC, RURP650CC, and RURP660CC are
ultrafast dual diodes with soft recovery characteristics (t
55ns). They have low forward voltage drop and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and ultrafast soft recovery minimize ringing
and electrical noise in many power switching circuits, reducing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER PACKAGE BRAND
RURP640CC TO-220AB RURP640C
RURP650CC TO-220AB RURP650C
RURP660CC TO-220AB RURP660C
RR
6A, 400V - 600V Ultrafast Dual Diodes
Package
JEDEC TO-220AB
o
C
ANODE 2
CATHODE
ANODE 1
CATHODE
(FLANGE)
Symbol
<
K
A
1
A
2
NOTE: When ordering, use the entire part number.
Formerly developmental type TA49038.
Absolute Maximum Ratings (per leg) T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = +155oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
= +25oC, Unless Otherwise Specified
C
RURP640CC RURP650CC RURP660CC UNITS
RRM
RWM
R
F(AV)
FSM
FSM
D
AVL
, TJ-65 to +175 -65 to +175 -65 to +175
STG
400 500 600 V
400 500 600 V
400 500 600 V
12 12 12 A
60 60 60 A
50 50 50 W
10 10 10 mJ
6-55
666A
o
C
File Number 4007
Page 2
Specifications RURP640CC, RURP650CC, RURP660CC
Electrical Specifications (per leg) T
= +25oC, Unless Otherwise Specified
C
LIMITS
RURP640CC RURP650CC RURP660CC
SYMBOL TEST CONDITION
V
F
I
R
IF = 6A, TC = +25oC - - 1.5 - - 1.5 - - 1.5 V
I
= 6A, TC = +150oC - - 1.2 - - 1.2 - - 1.2 V
F
VR = 400V, TC = +25oC --100------µA
V
= 500V, TC = +25oC -----100---µA
R
MIN TYP MAX MIN TYP MAX MIN TYP MAX
VR = 600V, TC = +25oC --------100µA
I
R
t
RR
VR = 400V, TC = +150oC--500------µA
V
= 500V, TC = +150oC-----500---µA
R
= 600V, TC = +150oC--------500µA
V
R
IF = 1A, dIF/dt = 200A/µs- -55- -55- -55ns
IF = 6A, dIF/dt = 200A/µs- -60- -60- -60ns
t
A
t
B
Q
RR
C
J
R
θJC
IF = 6A, dIF/dt = 200A/µs - 28 - - 28 - - 28 - ns
IF = 6A, dIF/dt = 200A/µs - 16 - - 16 - - 16 - ns
IF = 6A, dIF/dt = 200A/µs - 150 - - 150 - - 150 - nC
VR = 10V, IF = 0A - 25 - - 25 - - 25 - pF
--3--3--3oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
I
= Instantaneous reverse current.
R
= Reverse recovery time (See Figure 2), summation of tA + tB.
t
RR
= Time to reach peak reverse current (See Figure 2).
t
A
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
B
= Reverse recovery charge.
Q
RR
= Junction Capacitance.
C
J
R
= Thermal resistance junction to case.
θJC
= Controlled avalanche energy. (See Figures 10 and 11).
E
AVL
pw = pulse width.
D = duty cycle.
UNITS
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
t
3
R
FIGURE 1. tRR TEST CIRCUIT FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
+V
3
≥ 5t
R
1
Q
1
R
2
Q
3
3
C1
Q
2
-V
4
t
1
A(MAX)
t2 > t
RR
t3 > 0
L
t
1
A(MIN)
≤
R
10
4
L
LOOP
Q
4
DUT
R
4
0
dI
F
I
F
dt
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
6-56
Page 3
RURP640CC, RURP650CC, RURP660CC
Typical Performance Curves
30
10
+100oC
, FORWARD CURRENT (A)
F
1
I
0.5
0
+175oC
0.5
VF, FORWARD VOLTAGE (V)
1
+25oC
1.5
2
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
T
= +25oC, dIF/dt = 200A/µs
50
40
30
20
t, RECOVERY TIMES (ns)
10
t
RR
t
C
A
t
B
2.5
500
100
, REVERSE CURRENT (µA)
R
0.01
I
0.001
10
0.1
1
0
100 500
V
+175oC
+100oC
+25oC
, REVERSE VOLTAGE (V)
R
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
90
75
60
45
30
t, RECOVERY TIMES (ns)
15
TC = +100oC, dIF/dt = 200A/µs
t
RR
t
A
t
B
600400300200
0
0.5
1
IF, FORWARD CURRENT (A)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +25oC
100
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
16
IF, FORWARD CURRENT (A)
TC = +175oC, dIF/dt = 200A/µs
t
RR
t
A
t
B
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +175oC
6
0
0.5
16
IF, FORWARD CURRENT (A)
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
CURRENT AT +100oC
6
5
DC
4
SQ. WAVE
3
2
1
, AVERAGE FORWARD CURRENT (A)
F(AV)
0
I
145
150
155
, CASE TEMPERATURE (oC)
T
C
160
165
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
170
175
6-57
Page 4
RURP640CC, RURP650CC, RURP660CC
Typical Performance Curves (Continued)
75
60
45
30
15
, JUNCTION CAPACITANCE (pF)
J
C
0
0
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
50
VR, REVERSE VOLTAGE (V)
100
150
200
I
= 1A
MAX
L = 40mH
R < 0.1Ω
= 1/2LI2 [V
E
AVL
AND Q2 ARE 1000V MOSFETs
Q
1
AVL
/(V
AVL
12V
- VDD)]
Q
1
130Ω
Q
2
130Ω
1MΩ
L
DUT
CURRENT
SENSE
R
+
V
DD
V
AVL
I
L
IV
V
DD
I
L
-
12V
t
0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
t
1
t
2
t
6-58
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