Datasheet RTQ030P02 Datasheet (ROHM) [ru]

Transistor

DC-DC Converter (−20V, −3.0A)

RTQ030P02

zFeatures

1) Low On-resistance.(110mΩ at 2.5V)

2) High Power Package.

3) High speed switching.

4) Low voltage drive.(2.5V)

zApplications
DC-DC converter

zStructure

Silicon P-channel
MOSFET

zPackaging specifications

Package

Type

RTQ030P02

Code
Basic ordering unit

(pieces)

Taping

TR

3000

zExternal dimensions (Units : mm)

TSMT6

2.8

1.6

)

1

(
)

2

(

0.4

)

3

(

0.16

Abbreviatedsymbol : TS

zEquivalent circuit

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(2) (3)

RTQ030P02

(6)(5)(4)

2.9

0.85

Each lead has same dimensions

(4)(5)(6)

∗1

(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURCE
(5)DRAIN
(6)DRAIN

1/4

Transistor

zAbsolute maximum ratings (Ta=25°C)

I

V

(BR)DSS

I

V

R

DS(on)

Y

C
C
C

d(on)

t

t

d(off)

Qg
Qgs

Qgd

VSD

GSS

DSS

GS(th)

fs

iss

oss

rss

r

t

t

f

Symbol

V
V

I

I
P

Tch

Tstg

∗

∗

∗
∗

∗
∗

DSS

GSS

I

D

DP

I

S

SP

D

Min.

−20

−0.7

2.0

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

<

∗1 Pw 10µs, Duty cycle 1%

=

∗2 Mounted on a ceramic board

<

=

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗PULSED

Body diode characteristics (source-drain characteristics)

Forward voltage

Limits Unit

−20
±12

±3

±12

−1

−4

1.25
150

−55~+150

Typ. Max.

−

−

−

−

60

Unit

±10

−

−1

−2.0

80

65 90

110

150

−

−

800
150
100

15
27
50
20

9.0

1.6

4.6

−

−

−

−

−

−

−

−

−

−

−1.2

−

µA

V

µA

V

mΩ
mΩ
mΩ

S
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

V

V
I
V
V
I

I

V

V
V
A

∗1

A
A

∗1

A

∗2

W

°C
°C

Conditions

GS

=±12V, VDS=0V

mA,

D

=−1 , VGS=0V

DS

=−20V, VGS=0V

DS

=−10V, ID=−1

D

=−3A, VGS=−4.5V

D

=−3A, VGS=−4V

D

=−1.5A, VGS=−2.5V

I

DS

=−10V, ID=−1.5A

V

GS

DS

=−10V,

V

=1MHz

f

D

=−1.5A

I

DD

V
V

GS

=−4.5V

L

=10Ω

R
R

GS

=10Ω

V

DD
GS

=−4.5V

V

I

D

=−3A

I

S

=−1A, VGS=0V

=0V

−15V

−15V

RTQ030P02

mA

2/4

Transistor

zElectrical characteristic curves

10

1

Ta=125

(A)

D

Drain Current : −I

0.1

0.01

0.001

75
25

−25

0 0.5 1.0

C
C
C
C

1.5

2.0 2.5 3.0 3.5 4.0

Gate−Source Voltage : −VGS[V]

Fig.1 Typical Transfer Characteristics

1000

Ta=125

C

75

C

25

C

−25

C

100

(on)[mΩ]

DS

R

Static Drain−Source On−State Resistance

10

0.1 1

Drain Current : −ID[A]

Fig.4 Static Drain−Source On−State
Resistance

VDS=−10V
pulsed

VGS=−4V
pulsed

vs.Drain−Current

1000

(on)[mΩ]

DS

R

Static Drain−Source On−State Resistance

Static Drain−Source On−State Resistance

10

GS

=−4V

V

−4.5V

−10V

100

10

0.1 1

Drain Current : −ID[A]

Fig.2 Static Drain−Source On−State
Resistance

1000

100

Ta=125

RDS(on)[mΩ]

75
25

−25

10

0.1 1

C
C
C
C

vs.Drain Current

Drain Current : −ID[A]

Fig.5 Static Drain−Source On−State
Resistance

vs.Drain−Current

Ta=25 C
pulsed

VGS=−2.5V
pulsed

Static Drain−Source On−State Resistance

10

10

RTQ030P02

1000

Ta=125

C

75

C

25

C

−25

(on)[mΩ]

100

DS

R

10

[A]

DR

0.1

Reverse Drain Current : −I

0.01

C

0.1 1

Drain Current : −ID[A]

Fig.3 Static Drain−Source On−State
Resistance

10

C

Ta=125

C

75

C

25

1

C

−25

0 0.5

Source−Drain Voltage : −V

vs.Drain Current

1.0

Fig.6 Reverse Drain Current
vs.

Source-Drain Voltage

VGS=−4.5V
pulsed

1.5

SD

VGS=0V
pulsed

[V]

10

2.0

10000

1000

100

Capacitance : C [pF]

10

0.01 0.1 1 10 100
Drain−Source Voltage : −V

Fig.7 Typical Capactitance

vs.Drain−Source Voltage

DS

Ta=25 C
f=1MHz
V

Coss

[V]

GS

Crss

=0V

Ciss

1000

100

10

Switching Time : t [ns]

1

0.01 0.1 1 10

tf

td(off)

td(on)

tr

Drain Current : −I

Fig.8 Switching Characteristics

8

DD
GS
G

=−15V
=−4.5V

=10Ω

7

[V]

6

GS

5

4

3

2

Gate-Source Voltage: -V

1
0

012

21048

6

Ta=25 C
V
I
R
pulsed

Ta=25 C
V
V
R
pulsed

D

[A]

DD

D

=−3.0V

G

=−15V

=10Ω

Total Gate Charge : Qg[nC]

Fig.9 Dynamic Input Characteristics

3/4

Transistor

zMeasurement circuits

V

10%

GS

50%

RTQ030P02

Pulse Width

50%

90%

V

GS

R

G

D.U.T.

D

I

V

DS

R

L

V

DD

Fig.10 Switching Time Measurement Circuit

IG(Const)

I

V

GS

R

G

D

D.U.T.

V

DS

R

L

V

DD

10%

V

DS

90%

t

r

t

d(on)

t

on

Fig.11 Switching Waveforms

V

G

V

GS

Qgs Qgd

Qg

10%

90%

t

f

t

d(off)

t

off

Charge

Fig.12 Gate Charge Measurement Circuit



Fig.13 Gate Charge Waveforms

4/4