Datasheet rt9232b Datasheets

Page 1
RT9232B
Programmable Frequency Synchronous Buck PWM Controller
General Description
The RT9232B is a single-phase synchronous buck PWM DC-DC converter controller designed to drive two N- MOSFET s. It provides a highly accurate, progra mmable output voltage precisely regulated to low voltage requirement with an internal 0.8V ± 1% reference.
The
RT9232B uses an external compensated, single
feedback loop voltage mode PWM control for fa st tran sient response. An oscillator with Programmable frequency (50kHz to 800kHz) reduces the external inductor and cap acitor component size f or saving PCB board area.
The RT9232B provides fast tra n sient response to satisfy high current output applications (up to 25A) while minimizing external components. It is suitable for high­performance gra phic processors, DDR a nd VTT power .
The RT9232B integrates complete protect functions such
a s Soft Start, Output Enable, UVLO(under-voltage lockout) and OCP into a small 14-pin pa ckage.
Applications
System (Graphic, MB) with 12V Power.Graphic Cards (AGP 8X, 4X, PCI Express*16) :
`High-Current f or High-Performance Gra phic Processors (GPU, VPU) `Middle Current for High-Perf ormance Graphic Memory Power (DDR, D DR II) `Low Current with Sink Ca pacity for High-Perf ormance Gra phic Memory Power (DDR/VTT)
3.3V to 12V Input DC-DC RegulatorsLow V oltage Distributed Power Supplies
Pin Configurations
(TOP VIEW)
RT
OCSET
SS
COMP
FB EN
GND
2 3 4 5 6 7
14 13 12 11 10
VCC PVCC LGATE PGND BOOT
9
UGATE
8
PHASE
Features

Single IC Supply Voltage : 12V


Single phase DC/DC Buck Converter with

`High Output Current (up to 25A ) `Low Output Voltage (down to 0.8V ) `High Input Voltage (up to 12V )

Operate from 12V, 5V or 3.3V Input

0.8V ± 1% Internal Reference

Adaptive Non-Overlapping Gate Drivers


Integrated High-Current, HV Gate Drivers


External Programmable Soft Start


External Programmable Frequency

(Range : 50kHz to 800kHz, 200kHz Free Run )

Provide Over Current Protection by Sensing

MOSFET R

On/Off Control by Enable Pin


Drives T wo N-MOSFET


Full 0 to 100% Duty Cycle


Fast T ran sient Respon se


Voltage Mode PWM Control with External

DS(ON)
Feedback Loop Compensation

RoHS Compliant and 100% Lead (Pb)-Free

Ordering Information
RT9232B
Package Type S : SOP-14
Operating Temperature Range P : Pb Free with Commercial Standard G : Green (Halogen Free with Commer­ cial Standard)
Note : RichTek Pb-free and Green products are :
`RoHS compliant and compatible with the current require­ ments of IPC/JEDEC J-STD-020.
`Suitable for use in SnPb or Pb-free soldering processes. `100% matte tin (Sn) plating.
SOP-14
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RT9232B
Typical Application Circuit
V
CC
R1
C1
C2
C
SS
2.2
0.22uF
0.1uF
R2
51k
14
13
3 1
6 7 4
VCC
PVCC
SS RT
EN GND COMP
RT9232B
C11
BOOT
OCSET
UGATE
PHASE
LGATE
PGND
33pF
0.22uF
V
CC
R3
10k
1N4148
10 2
9
8
12 11
5
FB
D1
R4
3.01k
C3
1nF
R5
0
C4
0.1uF
R6
0
IPD06N03LA
R9
Q1 IPD09N03LA
Q2
1k
R7
2.2 1nF
2.2uH
C7
L2
C5
0.1uF
+
CE3
2200uF
1uH
+
C6
10uF
+
CE4
510uF
V
IN
3.3V - 12V
L1
22uF
CE0
+
C8
470uF
+
CE1 1000uF
10uF
C9
C10
0.1uF
+
CE2
1000uF
V
OUT
C12
10nF
R8
15k
R10 562
C13
10nF
R11
1k
Functional Pin Description
Pin No. Pin Name Pin Function
1 RT Oscillator Frequency Setting 2 OCSET Set Over Current Protection Triggering Level 3 SS Soft Start Time Interval Setting 4 COMP Feedback Compensation 5 FB Voltage Feedback 6 EN Chip Enable (Active High) 7 GND IC Signal Reference Ground 8 PHASE Return Path for Upper MOSFET
9 UGATE Upper MOSFET Gate Drive 10 BOOT Input Supply for Upper Gate Drive 11 PGND Power Ground 12 LGATE Lower MOSFET Gate Drive 13 PVCC Input Supply for Lower Gate Drive 14 VCC Internal IC Supply (12V Bias)
2
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Function Block Diagram
VCC
RT9232B
EN
10uA
SS
+
-
UV
Oscillator
RT
+ +
-
FB
COMP
0.8V
Reference
0.6V
+
EA
­+
Operation
Startup
RT9232B initializes automatically after receiving both V and VIN power. Special power-on sequence is not necessary. The Power-On Reset (POR) function
continually monitors input supply voltages and enable voltage. POR function monitors IC power via VCC pin a nd external MOSFET power via OCSET pin. Voltage on OCSET pin is a fixed voltage drop less than VIN. When voltages on VCC, OCSET, and EN pins exceed their thresholds, POR function initializes soft-start operation.
POR inhibits driver operation while EN pin pulls low. Tra nsitioning EN pin high after in put supply voltages ready initializes soft-start operation.
Soft-Start
After POR function relea ses soft-start operation, an internal 10uA current source charges a n external ca pacitor on SS pin (Css) to 5V . Soft-start function clamps both COMP & FB pins to SS pin voltage & a fixed voltage drop less tha n SS pin voltage respectively. Thus upper MOSFET turns on at a limited duty and output current overshoot ca n be reduced. This method provides a rapid and controlled output voltage rise.
CC
Power-On
Reset (POR)
POR
Soft Start
and
Fault Logic
PWM
­+
200uA
INHIBIT
Driver Logic
OCSET
BOOT UGATE
PHASE
PVCC LGATE PGND GND
OCP
The OCP function monitors output current by using upper MOSFET R
. The OCP function cycles soft-start
DS(ON)
function in a hiccup mode. Overcurrent triggering level can be arbitrarily set by adjusting R
. An Internal 200μA
OCSET
current sink makes a voltage drop across R VIN. When V
is lower than V
PHASE
, OCP function
OCSET
initializes soft-start cycles. The soft-start function discharges CSS with 10μA current sink a nd disable PWM function. Then soft-start function recharges Css and PWM operation resumes. The soft-start hiccup restarts after SS voltage fully charges to 4V if the output short event still remains. The converter is shutdown permanently after 3 times hiccup and only restarting supply voltages can enable the converter. The OCP funcion will be triggered a s inductor current rea ch :
I=
L(MAX)
IR
×
OCSET OCSET
R
DS(ON)
OCSET
from
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RT9232B
T o prevent OC f orm tripping in normal operation, R
OCSET
must be carefully chosen with :
1. Maximum R
2. MInimum I
3. I
L(MAX)
> I
OUT(MAX)
OCSET
at highest junction temperature
DS(ON)
from specification table
+ ΔIL /2
ΔIL = inductor ripple current
Under Voltage Protection
The under voltage protection function protects the converter from an shorted output by detecting the voltage on FB pin to monitor the output voltage. The UVP function cycles soft-start function in a hiccup mode. When output voltage lower than 75% of designated voltage, UVP function initializes soft-start cycles. The soft-start function discharges Css with 10μA current sink a nd disable PWM operation. Then soft-start function recharges Css and PWM operation resumes. The soft-start hiccup restarts after SS voltage fully charges to 4V if the output short event still remains. The converter is shutdown permanently after 3 times hiccup and only restarting supply voltages can ena ble the converter.
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Absolute Maximum Ratings (Note 1)
RT9232B
Supply Input Voltage, VPHASE to GND
, PVCC--------------------------------------------------------------------------- 15V
CC
DC------------------------------------------------------------------------------------------------------------------- 5V to 15V < 200ns------------------------------------------------------------------------------------------------------------ 10V to 30V
BOOT to PHASE ------------------------------------------------------------------------------------------------ 15VBOOT to GND
DC------------------------------------------------------------------------------------------------------------------- 0.3V to VCC+15V < 200ns------------------------------------------------------------------------------------------------------------ 0.3V to 42V
SS, FB, COMP, RT --------------------------------------------------------------------------------------------- 6VInput, Output or I/O Voltage----------------------------------------------------------------------------------- GND0.3V to VPack age Thermal Resista nce (Note 4)
CC
SOP-14, θJA----------------------------------------------------------------------------------------------------- 100°C/W
Lead Temperature (Soldering, 10 sec.) -------------------------------------------------------------------- 260°C Junction T e mperature ------------------------------------------------------------------------------------------ 150°CStorage Temperature Range---------------------------------------------------------------------------------- 65°C to 150°CESD Susceptibility (Note 2) HBM (Huma n Body Mode) ----------------------------------------------------------------------------------- 2kV MM (Machine Mode)------------------------------------------------------------------------------------------- 150V
Recommended Operating Conditions (Note 3)
+ 0.3V
Supply Input Voltage, VSupply Voltage to Drain of Upper MOSFETs, VAmbient Temperature Range --------------------------------------------------------------------------------- 40°C to 85°CJunction Temperature Range --------------------------------------------------------------------------------- 40°C to 125°C
------------------------------------------------------------------------------------ 12V ±10%
CC
------------------------------------------------------- 3.3V, 5V to 12V ±10%
IN
Electrical Characteristics
(V
= 12V, T
CC
VCC Supply Current
Nominal Supply Current
Power-On Reset (POR)
VCC Rising Threshold Power On Reset Hysteresis
OCSET Rising Threshold for start up Enable Input Threshold (ON) Enable Input Threshold (OFF)
Oscillator
Free Running Frequency
= 25°C, Unless otherwise specified.)
A
Parameter Symbol
EN = VCC, UGATE, LGATE open
I
CC
RT9232B
V
V
OCSET_ON
V V
f
OSC
CC_ON
EN_ON EN,_OFF
V
V
-- 1.5 2 V
V
V
170 200 230 kHz
Test Conditions
= 4.5V
OCSET
= 4.5V
OCSET
= 4.5V
OCSET
= 4.5V
OCSET
Variation 6k < (RT to GND) < 200k
Min Typ. Max Units
-- 3 -- mA
8.4 -- 10.4 V
0.3 0.7 --
-- -- 2 V
0.8 -- -- V
20
-- 20 %
V
Ramp Amplitude
ΔV
OSC
-- 1.5 --
V
P-P
To be continued
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RT9232B
Parameter Symbol Test Conditions Min Typ Max Units
Reference
Error Amplifier Reference Vo ltage
V
REF
Error Amplifier
DC gain -- 88 -- dB Gain-Bandwidth product GBW -- 15 -- MHz Slew Rate SR COMP=10pF -- 6 -- V/μs
Soft Start
External SS Source Current ISS 7 10 -- μA
PWM Controller Gate Driver
0.792 0.8 0.808 V
Upper Drive Source R
Upper Drive Sink R Lower Drive Source R Lower Drive Sink R
UG_SC
UG_SK LG_SC LG_SK
V
BOOT PHASE
V
BOOT UGATE
V
BOOT PHASE
V
PVCC LGATE
V
LGATE
= 1V -- 1.7 -- Ω
= 12V = 1V
-- 5.2 -- Ω
= 1V -- 2.7 -- Ω
= 1V -- 3.5 -- Ω
Driving Capability
Upper Drive Source I Upper Drive Sink I Lower Drive Source I Lower Drive Sink I
UG_SC UG_SK LG_SC LG_SK
V
BOOT UGATE
V
UGATE PHASE
V
PVCC LGATE
V
LGATE − GND
= 12V -- 1.0 -- A
= 12V -- 2.0 -- A
= 12V -- 1.6 -- A
= 12V -- 3.2 -- A
Protection
OCSET Current Source I
OCSET
V
OCSET
= 11.5V 170 200 230 μA Under-Voltage Protection FB Falling 0.5 0.6 0.7 V Under-Voltage Protection Delay -- 30 -- μs
Note 1. Stresses listed as the above "Absolute Maximum Ratings" may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may remain possibility to affect device reliability.
Note 2. Devices are ESD sensitive. Handling precaution recommended. Note 3. The device is not guaranteed to function outside its operating conditions. Note 4. θ
JEDEC 51-3 thermal measurement standard.
is measured in the natural convection at T
JA
= 25°C on a low effective thermal conductivity test board of
A
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Typical Operating Characteristics
RT9232B
100
Eff iciency (%)
SS
(2V/Div)
V
OUT
(2V/Div)
Efficiency vs. Output Current
V
= 1.6V
OUT
f = 300kHz
90
80
70
60
50
VIN = 3.3V
VIN = 5V
V
= 12V
IN
0 5 10 15 20 25
Output Cu rrent (A)
Power On
10000
1000
(kΩ)
RT
100
R
SS
(2V/Div)
V
OUT
(2V/Div)
RRT vs. Oscillator Frequency
Pull high to VCC 12
Pull down to GND
10
1
0 100 200 300 400 500 600 700
Frequ ency (kHz )
Power On
EN
(10V/Div)
COMP
(500mV/Div)
SS
(2V/Div)
V
OUT
(2V/Div)
EN
(10V/Div)
I
L
(1A/Div)
Time (10ms/Div)
Power On
Time (25ms/Div)
EN
(10V/Div)
I
L
(1A/Div)
UGATE
(20V/Div)
LGATE
(10V/Div)
V
OUT
(500mV/Div)
I
L
(10A/Div)
Time (10ms/Div)
Power Off
Time (10μs/Div)
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RT9232B
UGATE
(20V/Div)
LGATE
(10V/Div)
V
OUT
(100mV/Div)
I
L
(10A/Div)
UGATE
(20V/Div)
V
OUT
(500mV/Div)
LGATE
(10V/Div)
Load Transient Response
Time (25μs/Div)
Load Transient Response
Falling
UGATE
(20V/Div)
LGATE
(10V/Div)
V
OUT
(100mV/Div)
I
L
(10A/Div)
UGATE
(5V/Div)
V
OUT
(500mV/Div)
SS
(5V/Div)
Load Transient Response
Rising
Time (5μs/Div)
OCP
I
L
(20A/Div)
(5/Div)
Falling
UGATE
UGATEPHASE
LGATE
Time (1ms/Div)
Dead Time
PHASE
Time (25ns/Div)
I
L
(10A/Div)
(5/Div)
Time (25ms/Div)
Dead Time
Rising
UGATE
PHASE
UGATEPHASE
LGATE
Time (25ns/Div)
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FSW vs. Temperature
230 220 210 200
(kHz)
190
SW
180
F
170 160 150
-40 -20 0 20 40 60 80 100 120 140
Temperature
(°C)
(V)
REF
V
RT9232B
V
vs. Temperature
0.804
0.803
0.802
0.801
0.800
0.799
0.798
0.797
0.796
0.795
0.794
-40 -20 0 20 40 60 80 100 120 140
REF
Temperature
(°C)
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RT9232B
Application Information
The RT9232B is a single-pha se synchronous buck PWM DC-DC controller designed to drive two N-MOSFETs. It provides a highly accurate, progra mmable output voltage precisely regulated to low voltage requirement with an internal 0.8V ±1% reference.
whichever is smaller dominates the behavior of the devices. During T0~T1, since SS is smaller than the sawtooth valley , the PWM comparator outputs low no matter what the COMP voltage is.
T1~T2
Initialization
The RT9232B automatically initiates its softstart cycle only after VCC and VIN power and chip enabling signals are ready . There is no special power-on sequence should be took care especially while implement the chip in. The internal Power-On Reset (POR) logic continually monitors the voltage level of input power and ena bling pin; in which the IC supply power is monitored via VCC pin and input power VIN is via OCSET pin. An internal current source with driving capability of 200uA causes a fixed voltage drop across the resistor connecting VIN to OCSET pin. The RT9232B internal logic will deem the input voltage ready once the voltage of OCSET pin is high than 1.5V. The preferred VIN ready level could be set by selecting an appropri ate resistor R
IN_READY
<
SENSE
R
OCSET
μ
A200
as :
1.5VV
Ω
Once all voltages of VCC, OCSET, and EN pins ramp higher than the internal specific thresholds. The intern al POR logic will initialize the softstart operation then. Moreover, the POR inhibits driver operation while pulling the EN pin low . T ransitioning EN pin high after input supply voltages ready to initialize soft-start operation.
SSE ramps up a nd domin ates the behavior of EA during T1~T2. EA regulates COMP appropriately so that FB ramps up along the SSE curve. The output voltage ramps up accordingly . Thus upper MOSFET turns on at a limited duty and output current overshoot ca n be reduced.
It is noted that lower MOSFET keeps off before the upper MOSFET starts switching. This method provides smooth start up when there is residual voltage on output ca pacitors. The output voltage delay time and ramp up time are calculated as Equation (1) a nd (2) respectively .
C0.8V
×
SS
(1)
T0T1
=
T1T2
=
μ
×
μ
FB
0.8V
(s)
A10
C0.8V
SS
(2)
(s)
A10
SSE SS
COMP
EA
PWM
Soft-Start
The behavior of RT9232B Soft-Start can be simply described a s shown in Figure.1 below; and the Soft-Start can be sliced to several time-fra mes with specific operation respectively .
T0~T1
The RT9232B initiates the softstart cycle as shown in Figure 1 when POR function is OK. An internal 10uA current source charges an external capa citor on SS pin (Css) to 5V . The softstart function produces a n SSE signal that is equal to SS0.8V. Error Amplifier (EA) and PWM comparator are triple-input devices. The non-inverting input
10
5V
0.8V
T0 T1 T2
Figure 1. Ti ming diagra m of softstart
SS
SSE
COMP FB
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RT9232B
Switching Frequency Setting
The default switching frequency is 200kHz when RT pin left open. A resistor connected (RRT) from RT pin to ground increa ses the switching frequency as Equation (3).
6
102.9
(3) (RRT to GND)
OSC
200kHzf
×
+=
RT
kHz
)(R
Ω
Conversely , connecting a pull-up resistor (RRT) from RT pin reduces the switching frequency according to Equation (4)
6
1033
(4) (RRT to VCC = 12V)
OSC
200kHzf
×
=
RT
kHz
)(R
Ω
Under Voltage Protection
The under voltage protection is enabled when the RT9232B is activated and SS voltage is higher than 4V. The UVP function is specified for protecting the converter from a n instant output short circuit during normal operation. The RT9232B continuously monitors the output voltage by detecting the voltage on FB pin. The UVP function is triggered and initiates the hiccup cycles when output voltage lower than 75% of designated voltage with a 30us delay .
Hiccup cycle turns off both upper and lower MOSFET first. An internal 10uA current sink discharges the softstart cap acitor CSS. SS pin voltage ramps down linearly . When SS pin voltage touches 0V, hiccup cycle releases and normal softstart cycle takes over. When SS voltage is higher than 4V, the UVP function is enabled again. The hiccup cycle restarts if the output short event still remains. The converter is shutdown permanently after 3 time s hiccup and only restarting supply voltages can enable the converter.
Note that triggering the POR function or EN will reset the hiccup counter. Ma ke sure that VCC, EN a nd OCSET pin voltages are higher than their respective trip level when output short circuit occurs or the UVP function may not latch up the converter causing permanent da mage to the converter.
Component Selection
Components should be appropri ately selected to ensure stable operation, fa st tran sient response, high efficiency , minimum BOM cost and maximum reliability.
Output Inductor Selection
The selection of output inductor is based on the considerations of efficiency, output power a nd operating frequency . For a synchronous buck converter , the ri pple current of inductor (ΔIL) can be calculated a s f ollows :
V
)V(VI
(5)
×=Δ
OUTINL
OUT
OSCIN
LfV
××
Generally , an inductor that limits the ripple current between 20% and 50% of output current is a ppropriate. Ma ke sure that the output inductor could handle the maximum output current and would not saturate over the operation temperature range.
Output Capacitor Selection
The output cap acitors determine the output ripple voltage (ΔV
) and the initial voltage drop after a high slew-rate
OUT
load tran sient. The selection of output ca pacitor depends on the output ripple requirement. The output ripple voltage is described as Equation (6).
V
2
OSC
OUT
××
CLf
OUT
D)(1
(6)
ESRIV
LOUT
1
×+×Δ=Δ
8
For electrolytic capacitor application, typically 90~95% of the output voltage ripple is contributed by the ESR of output cap acitors. Paralleling lower ESR cera mic cap acitor with the bulk capacitors could dramatically reduce the equivalent ESR and consequently the ri pple voltage.
Input Capacitor Selection
Use mixed types of input bypass capacitors to control the input voltage ripple and switching voltage spike a cross the MOSFETs. The buck converter draws pulsewise current from the input ca pacitor during the on time of upper MOSFET . The RMS value of ri pple current flowing through the input ca p acitor is described as :
(7)
OUTIN(RMS)
D)(1DII
××=
The input bulk capacitor must be cable of handling this ripple current. Sometime, for higher efficiency the low ESR capacitor is necessarily. Appropriate high frequency ceramic capacitors physically near the MOSFETs effectively reduce the switching voltage spikes.
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RT9232B
MOSFET Selection
The selection of MOSFETs is based upon the considerations of R
, gate driving requirements, and
DS(ON)
thermal management requirements. The power loss of upper MOSFET consists of conduction loss and switching loss and is expressed as :
(8)
2
OUT
where T
RISE
and T
FALL
upper MOSFET respectively. R
P P P
+=
SW_UPPERCOND_UPPERUPPER
1
I
DRI
+××=
OUTDS(ON)
2
f)T(TV
×+××
OSCFALLRISEIN
are rising and falling time of VDS of
and QG should be
DS(ON)
simultaneously considered to mini mize power loss of upper MOSFET.
The power loss of lower MOSFET consists of conduction loss, reverse recovery loss of body diode, and conduction loss of body diode and is expressed as :
(9)
2
OUT
1 2
where T
is the conducting time of lower body diode.
DIODE
×××+
++=
P P P P
DIODERRCOND_LOWERLOWER
××+××=
fVQD)-(1RI
OSCINRRDS(ON)
fTV I
OSCDIODEFOUT
Special control scheme is adopted to minimize body diode conducting time. As a result, the R
loss dominates
DS(ON)
the power loss of lower MOSFET. Use MOSFET with adequate R
to minimize power loss and satisfy
DS(ON)
thermal requirements.
Feedback Compensation
Figure 2 highlights the voltage-mode control loop for a synchronous buck converter. Figure 3 shows the corresponding Bode plot. The output voltage (V
OUT
) is regulated to the reference voltage. The error a mplifier EA output (COMP) is compared with the oscillator (OSC) sawtooth wave to provide a pulse-width modulated (PWM) wave with an amplitude of VIN at the PHASE node. The PWM wave is smoothed by the output filter (L a nd C
OUT
The modulator trans fer function is the small-signal transfer function of V DC gain and the output filter (L a nd C pole break frequency at F
/COMP. This function is domin ated by a
OUT
), with a double
OUT
and a zero at F
P_LC
Z_ESR
. The DC gain of the modulator is simply the input voltage (VIN) divided by the peak-to-pea k oscillator voltage ΔV
OSC
.
The break frequency FLC and F
are expressed as
ESR
Equation (10) and (1 1) respectively .
1
F
P_LC
F
Z_ESR
(10)
=
LC2
π
OUT
(11)
=
1
CESR2
π
××
OUT
The compensation network consists of the error a mplifier EA a nd the impeda nce networks ZIN and ZFB. The goal of the compensation network is to provide a closed loop transfer function with the highest DC gain, the highest 0dB crossing frequency (FC) and adequate pha se margin. Typically, FC in range 1/5~1/10 of switching frequency is adequate. The higher FC is, the faster dyn a mic response is. A pha se margin in the range of 45°C~ 60°C is desira ble.
The equations below relate the compensation network’s poles, zeros and gain to the components (R1, R2, R3, C1, C2, and C3) in Figure 2.
1
F
Z1
F
Z2
F
P1
F
P2
).
(12)
=
π
(13)
=
π
(14)
=
π
(15)
=
π
ΔV
OSC
××
R22
××
1
OSC
Comparator
1
1
××
C1R22
C3R32
PWM
V
E/A
C1
COMP
C3)R3(R12
×+×
C2C1
×
C2C1
+
V
IN
Driver
Z
IN
R3
PHASE
C
V
OUT
L
­+
Z
FB
EA
EA
C2
­+
­+
R2
REF
REF
Z
FB
Driver
FB
C3
Z
IN
R1
Figure 2
OUT
ESR
V
OUT
12
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RT9232B
100
80
60
40
20LOG
20
Gain (dB)
(R1/R2)
0
-20
-40
-60
Modulator
10 100 1K 10K 100K 1M 10M
FZ1FZ2FP1F
Gain
F
LC
Frequency (Hz)
20LOG
/ΔV
(V
IN
F
ESR
P2
Open Loop Error AMP Gain
)
OSC
Compensation Gain
Closed Loop Gain
Figure 3
Feedback Loop Design Procedure
Use these guidelines for locating the poles and zeros of the compensation network :
1. Pick Gain (R2/R1) f or desired 0dB crossing frequency
(FC).
of high-side MOSFET. The MOSFETs of linear regulator should have wide pad to dissipate the heat. In multilayer PCB, use one layer as power ground a nd have a separate control signal ground a s the reference of the all signal. To avoid the signal ground is effect by noise a nd have best load regulation, it should be connected to the ground terminal of output. Furthermore, follows below guidelines can get better performa nce of IC :
(1). The IC needs a bypa ssing ceramic ca pa citor as a R-C
filter to isolate the pulse current from power stage and supply to IC, so the cera mic capa citor should be placed adja cent to the IC.
(2). Place the high frequency ceramic decoupling close
to the power MOSFETs.
(3). The feedback part should be pla ced a s close to IC a s
possible and keep away from the inductor a nd all noise sources.
(4). The components of bootstraps should be closed to
each other and close to MOSFETs.
2. Place 1ST zero FZ1 below modulator's double pole F
LC
(~75% FLC).
3. Place 2ND zero FZ2 at modulator's double pole FLC.
4. Place 1ST pole FZ1 at the ESR zero F
Z_ESR.
5. Place 2ND pole FZ2 at half the switching frequency.
6. Check gain against error a mplifier's open-loop gain.
7. Pick RFB for desired output voltage.
8. Estimate pha se margin and repeat if necessary.
Layout Consideration
Layout is very important in high frequency switching converter design. If designed improperly , the PCB could radiate excessive noise and contribute to the converter instability . First, place the PWM power stage components. Mount all the power components and connections in the top layer with wide copper area s. The MOSFET s of Buck, inductor, a nd output ca pacitor should be a s close to ea ch other as possible. This can reduce the radiation of EMI due to the high frequency current loop. If the output capacitors are placed in parallel to reduce the ESR of capacitor, equal sharing ripple current should be considered. Place the input ca pa citor directly to the drain
(5).The PCB trace from Ug and Lg of controller to
MOSFETs should be as short as possible and can carry 1A pea k current.
(6). Place all of the components a s close to IC a s possible.
DS9232B-03 March 2007 www.richtek.com
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Page 14
RT9232B
Outline Dimension
A
J
I
Dimensions In Millimeters Dimensions In Inches
Symbol
Min Max Min Max
A 8.534 8.738 0.336 0.344 B 3.810 3.988 0.150 0.157
B
F
C
D
H
M
C 1.346 1.753 0.053 0.069 D 0.330 0.508 0.013 0.020
F 1.194 1.346 0.047 0.053
H 0.178 0.254 0.007 0.010
I 0.102 0.254 0.004 0.010
J 5.791 6.198 0.228 0.244
M 0.406 1.270 0.016 0.050
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14
DS9232B-03 March 2007www.richtek.com
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