Datasheet RSH070P05 Datasheet (ROHM)

4V Drive Pch MOSFET

RSH070P05

Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET

Features

1) Built-in G-S Protection Diode.

2) Small and Surface Mount Package (SOP8).

Application

Power switching, DC / DC converter, Inverter

Packaging specifications Inner circuit

Type

RSH070P05

Package
Code
Basic ordering unit (pieces)

Taping

TB

2500

Absolute maximum ratings (Ta=25C)

Drain-source voltage
Gate-source voltage

Drain current

Source current
(Body diode)

Total power dissipation
Chanel temperature
Range of Storage temperature

*1 PW10

*2 Mounted on a ceramic board

Parameter

ｓ、

Duty cycle1



Continuous
Pulsed
Continuous
Pulsed



Symbol Limits Unit

V

DSS

V

GSS

I

D

I

DP *1

I

S

I

SP *1

P

D *2

T

ch

T

stg

-45 V

±20 V

±7.0 A

±28 A

-1.6 A

-28 A
2W

150

-55 to +150

o

o

C
C

Thermal resistance

Chanel to ambient

* Mounted on a ceramic board

Parameter

Symbol Limits Unit
R

th(ch-a) *

62.5

o

C/W

SOP8

(8) (7) (6) (5)

∗2

(1) (2) (3) (4)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

∗1

Each lead has same dimensions

(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain

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2009.12 - Rev.A

Electrical characteristics (Ta=25C)

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current
Gate threshold voltage

Static drain-source on-state
resistance

V

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Body diode characteristics (Source-Drain) (Ta=25C)

Parameter Symbol

∗Pulsed

Min.−Typ. Max.

I

GSS

− ±10 μAVGS=±20V, VDS=0V

−45 −−VI

I

DSS

GS (th)

−−−1 μAV

−1.0 −−2.5 V V

− 19 27 I

∗

DS (on)

− 25 35 mΩ

− 28 39 I

∗

10.0 −−SV

Y

fs

C

C
C

t

d (on)

t

d (off)

Q

Q

Q

− 4100 − pF V

iss

− 510

oss

−

rss

∗

∗

t

r

∗

∗

t

f

∗

g

∗

gs

∗

gd

330

31

−

35

−

135

−

50

−

34.0

−

9.5

−

12

−−nC

47.6 nC

Min. Typ. Max.

∗

V

SD

−−−1.2 V IS= −7A, VGS=0VForward voltage

− pF V

− pF f=1MHz

− ns

− ns

− ns

− ns

− nC

Unit

mΩ

mΩ

Unit

D

D

I

D
D

V

ID= −3.5A
V
R
R

V
I

D

R

Conditions

= −1mA, VGS=0V

= −45V, VGS=0V

DS

= −10V, ID= −1mA

DS

= −7A, VGS= −10V
= −7A, VGS= −4.5V
= −7A, VGS= −4.0V

= −10V, ID= −7A

DS

= −10V

DS

=0V

GS

DD

−25V

GS

= −10V

L

=−7Ω

G

=10Ω

−25V

DD

VGS= −5V

= −7A

L

=3.5Ω

R

G

=10Ω

Conditions

Data Sheet RSH070P05

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2009.12 - Rev.A

Electrical characteristic curves

10

VDS= -10V
pulsed

Ta=125oC

1

0.1

Drain Currnt : -ID [A]

0.01

1.0 1.5 2.0 2.5 3.0 3.5

Fig.1 Typical Transfer Characteristics Fig.3 Static Drain-Source On-State

1000

]



100

(on) [m

DS

10

Resistance R

Static Drain-Source On-State

1

0.01 0.1 1 10

Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (3)

10000

1000

100

Capacitance : C [pF]

10

o

C

75

o

25

C

o

C

-25

Gate-Source Voltage : -VGS [V]

VGS= -4V

pulsed

Ta=2 5oC
f=1MHz
V

0.1 1 10 100

Ta= 125oC

o

C

75

o

C

25

o

C

-25

Drain Curre nt : -ID [A]

=0V

GS

Drain-Source Voltage : -VDS [V]

Fig.7 Typical capacitance vs.
Source-Drain Voltage

Ciss

Coss

Crss

Ta=1 25oC

75

25

-25

o

C

o

C

o

C

Static Drain-Source On-State

1000

]



100

(on) [m

DS

Resistance R

VGS= -10V

pulsed

10

1

0.01 0.1 1 10

Drain Current : -ID [A]

Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (1)

200

]



150

(on) [m

DS

100

ID= -7.0A

50

Resistance R

Static Drain-Source On-State

ID= -3.5A

0

051015

Gate-Sourc e Voltage : -VGS [V]

Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage

10000

1000

Switching Time : t [ns]

100

10

tf

td(off)

td(on)

tr

1

0.01 0.1 1 10

Drain Curr ent : -ID [A]

Fig.8 Switching Characteristics

Ta=2 5oC
pulsed

Ta=2 5oC

= -25V

V

DD

= -10V

V

GS

=10

R

G

Pulsed

Data Sheet RSH070P05

1000

VGS= -4.5V

pulsed

]



100

(on) [m

DS

10

Resistanc e R

Static Drain-Source On-State

1

0.01 0.1 1 10

Resistance vs. Drain Current (2)

10

Ta=125oC

1

0.1

Source Current : -Is [A]

0.01

0.00.51.01.5

Fig.6 Source-Current vs.
Source-Drain Voltage

10

Ta= 25oC

9

= -25V

V

DD

8

= -7.0A

I

[V]

D



GS

=10

R

7

G

Pulsed

6

5

4

3

2

Gate-Source Voltage : -V

1

0

0 10203040506070

Fig.9 Dynamic Input Characteristics

Ta=1 25oC

o

C

75

o

C

25

o

C

-25

Drain Curre nt : -ID [A]

o

C

75

o

C

25

o

-25

C

Source-Drain Voltage : -VSD [V]



Total Gate Charge : Qg [nC]

VGS=0V

pulsed

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2009.12 - Rev.A

S

%

V

V

Fig.12 Gate Charge Test Circuit

I

S

Fig.13 Gate Charge Waveform

V

Measurement circuits

V

GS

R

G

D

I

D.U.T.

Data Sheet RSH070P05

GS

V

D

R

L

V

DD

10%

90%

90% 90

DS

t

10% 10%

d(on)

t

r

t

on

t

d(off)

t

r

t

off

Fig.10 Switching Time Test Circuit

V

G (Const.)

GS

R

G

D

I

D.U.T.

V

D

R

L

V

DD

Fig.11 Switching Time Waveforms

V

G

g

Q

GS

Q

gs

Q

gd

Charge

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2009.12 - Rev.A

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