Datasheet RRQ030P03 Datasheet (ROHM)

C

E

4V Drive Pch MOSFET

RRQ030P03

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Low On-resistance.

2) High Power Package.

3) High speed switching.

zApplications zEquivalent circuit
Switching

zPackaging specifications

Taping

TR

3000

Type

RRQ030P03

Package
Code

Basic ordering unit
(pieces)

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain−source voltage
Gate−source voltage

Drain current

Source current
(Body diode)

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board

Symbol

V

DSS

VGSS

I

D

IDP

IS
ISP
PD

Tch

Tstg

Limits Unit

−30
±20

±3

∗1

±12

−1

∗1

∗2

−12

1.25
150

−55 to +150

zThermal resistance

Parameter

hannel to ambient

∗ When mounted on a ceramic board.

Symbol Limits Unit

∗

Rth(ch-a)

100

TSMT6

(6)

1pin mark

Abbreviated symbol : UA

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

V
V
A
A
A
A

W

°C
°C

°C / W

2.9

1.9

0.950.95

(5)

(4)

(1)

(2)

(3)

0.4

(2) (3)

1.0MAX

0.85

0.7

2.8

1.6

0~0.1

0.6

~

0.3

0.16

Each lead has same dimensions

(4)(5)(6)

∗2

∗1

(1)DRAIN
(2)DRAIN
(3)GATE
(4)SOURC
(5)DRAIN
(6)DRAIN

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1/4

2009.03 - Rev.A

RRQ030P03

zElectrical characteristics (Ta=25°C)

Parameter Symbol

Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

I

V(BR)DSS

IDSS

VGS(th)

RDS(on)

Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance

n-on delay time

Tur

C
C

t
Rise time
Tur

n-off delay time

t
Fall time

Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

Qgs

Qgd

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter Symbol

V

SD

∗ Pulsed

Min.

GSS

−

−30

−

−1.0

−

∗

−

−

∗

Yfs

C

d(on)

d(off)

Qg

2.4

iss

−

oss

rss

t

t

−

−

∗

−

∗

r

−

∗

−

∗

f

−

∗

−

∗

−

∗

−

Min. Typ. Max.

∗

−−−1.2 V IS= −3A, VGS=0VForward voltage

Typ. Max.

−

±10

−

−

−

−1

−

−2.5

55

75
85 115
95

125

−

−

480

70
70

18
50
35

5.2

1.6

1.6

−

−

−

7

−

−

−

−

−

−

−

Unit

Unit

µA

GS=±20V, VDS=0V

V

V

I

D=−1 , VGS=0V

µA

V

DS=−30V, VGS=0V
DS=−10V, ID=−1

V

V

mΩ

I

D=−3A, VGS=−10V
D=−1.5A, VGS=−4.5V

I

mΩ

I

D=−1.5A, VGS=−4V

mΩ

S

V

DS=−10V, ID=−3A

pF

V

DS=−10V
GS=0V

V

pF

=1MHz

f

pF

ns

VDD −15V

D=−1.5A

I

ns

GS=−10V

V

ns

R

L 10Ω
G =10Ω

R

ns

VDD −15V

nC

D=−3A

I

GS=−5V

V

nC

R

L 5Ω

nC

G =10Ω

R

Conditions

mA,

mA

Conditions

Data Sheet

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2/4

2009.03 - Rev.A

RRQ030P03

zElectrical characteristic curves

3

2.5

[A]

D

2

1.5

1

DRAIN CURRENT : -I

0.5

0

00.20.40.60.81

DR AIN-SOU RCE VOLTAGE : - VDS[V] DR AIN-SOU RCE VOLTAGE : - VDS[V]

Fi g.1 T ypic al output char acter isti cs(Ⅰ) Fi g.2 T ypic al output char acter isti cs(Ⅱ)

-3.8V

-10V

-4.5V

-3.2V

-2.8V

Ta= 25°C
Puls ed

-3.0V

VGS=- 2.5V

3

-3.0V

-3.2V

-10V

-4.5V

-3.6V

VGS= -2.8V

2.5

[A]

D

2

1.5

1

DRAIN CURRENT : -I

0.5

0

0246810

Ta=25°C
Pulsed

[A]

D

0.1

DRAIN CURRENT : -I

0.01

0.001

Data Sheet

10

VDS= - 10V
Pulsed

1

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

01234

GATE- SOURCE VOLT AGE : -VGS[V]

Fi g.3 Typic al T ransfer Char acteris tics

1000

Ta=25°C
Pulsed

]

Ω

(ON)[m

DS

100

RESIST ANC E : R

STATIC DRAIN -SOUR CE ON-ST ATE

10

0.1 1 10

DRAIN-CURRENT : -I

Fi g.4 St ati c D rain- Sourc e On- State

Resi stance vs. Drain Cur rent(Ⅰ)

1000

VGS= -4.0V
Pulsed

]

Ω

(ON)[m

DS

100

VGS= -4.0V
V

= -4.5V

GS

V

= - 10V

GS

[A]

D

Ta=125°C

Ta=75°C
Ta=25°C

Ta= -25°C

1000

VGS= -10V
Pulsed

]

Ω

(ON)[m

DS

100

RESIST ANCE : R

STATIC DRAIN -SOUR CE ON-ST ATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.5 St atic D rain- Sourc e On-State

Resi stance vs. Drain C urr ent(Ⅱ)

10

VDS= -10V
Pulsed

1

|Yfs| [S]

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

1000

VGS= -4.5V
Pulsed

]

Ω

(ON)[m

DS

100

RESIST ANCE : R

STAT IC DR AIN-S OURC E ON-ST ATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.6 St atic D rain- Sourc e On-State

Resi stance vs. Drai n Curr ent(Ⅲ)

10

VGS=0V
Pulsed

Ta= 125°C

1

Ta= 75°C
Ta= 25°C

Ta= -25°C

0.1

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

RESIST ANC E : R

STATI C D RAIN -SOUR CE ON -ST ATE

10

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.7 St ati c D rain- Sourc e On- State

Resi stance vs. Drain Cur rent(Ⅳ)

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FOR WARD T RANSF ER AD MIT TANCE :

0.1

0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.8 F orward T ransfer Admittanc e
vs. Drain C urr ent

3/4

REVER SE DR AIN CUR RENT : -Is [A]

0.01

00.20.40.60.811.2

SOUR CE-DR AIN VOLTAGE : - VSD [V]

Fi g.9 R evers e Drai n Cur rent
vs. Sourse-Dr ain Voltag e

2009.03 - Rev.A

F

it

%

V

V

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

RRQ030P03

zMeasurement circuits

300

]

Ω

200

(ON)[m

DS

100

RESIST ANC E : R

STATI C D RAIN-SO UR CE ON-ST ATE

0

0246810

GATE- SOUR CE VOLTAGE : -VGS[V]

Fig.10 Static Drain-Source On-State
Resi stance vs. Gate Source Voltag e

1000

100

CAPACITANCE : C [pF]

10

0.01 0.1 1 10 100

DRAIN-SOURCE VOLTAGE : -V

Fi g.13 T ypic al Capac it ance
vs. Drain- Source Voltag e

ID= -1.5A

Coss

Crss

V

GS

ID= -3.0A

Ciss

I

D

Ta=25°C
Puls ed

Ta= 25°C
f=1MH z
V

GS

[V]

DS

=0V

R

L

D.U.T.

V

R

G

DD

1000

100

10

SWITC HING TIM E : t [ns]

td(off)

t

r

1

0.01 0.1 1 10

DRAIN-CURRENT : -ID[A]

Fi g.11 Swi tching Char acteri stic s

td(on)

Ta= 25°C

= - 15V

V

DD

t

f

V

=-10V

GS

=10Ω

R

G

Pulsed

[V]

GS

GATE- SOURCE VOLT AGE : -V

Pulse Width

V

DS

GS

10%

50%

90%

50%

10% 10

DS

t

90% 90%

d(on)

tr

t

on

t

d(off)

tf

t

off

Data Sheet

10

8

6

4

2

0

0246810

TOTAL GATE CHARGE : Qg [nC]

Fi g.12 D ynamic Input Char acteri stic s

Ta= 25°C

= - 15V

V

DD

= -3.0A

I

D

R

=10Ω

G

Pulsed

ig.1-1 Switching Time Measurement Circu

V

GS

I

G(Const.)

R

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G

I

D

D.U.T.

Fig.1-2 Switching Waveforms

VG

V

DS

R

L

V

DD

GS

Q

gsQgd

g

Q

Charge

4/4

2009.03 - Rev.A

Notes

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"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and
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