Page 1
Datasheet
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© 2012 ROHM Co., Ltd. All rights reserved.
RRH050P03
Pch -30V -5A Power MOSFET
Range of storage temperature
T
stg
-55 to +150
°C
Power dissipation
Junction temperature
T
j
150
°C
P
D
*4
2.0
W
P
D
*5
0.65
W
Gate - Source voltage
V
GSS
20
V
Avalanche energy, single pulse
EAS
*3
0.2
mJ
Continuous drain current
I
D
*1
5
A
Pulsed drain current
I
D,pulse
*2
20
A
Drain - Source voltage
V
DSS
-30
V
Taping code
TB
Marking
RRH050P03
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
lPackaging specifications
Type
Packaging
Taping
lApplication
Reel size (mm)
330
DC/DC Converter
Tape width (mm)
12
Basic ordering unit (pcs)
2,500
lFeatures
lInner circuit
1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
4) Pb-free lead plating ; RoHS compliant
lOutline
V
DSS
-30V
R
DS(on)
(Max.)
50mW
I
D
-5A
P
D
2.0W
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
SOP8
(5) Drain
(6) Drain
(7) Drain
(8) Drain
*1 ESD PROTECTION DIODE
*2 BODY DIODE
(1) Source
(2) Source
(3) Source
(4) Gate
1/11
2012.06 - Rev.C
Page 2
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 10mH, V
DD
= -15V, Rg = 25W, starting Tj = 25°C
*4 Mounted on a ceramic board (30×30×0.8mm)
*5 Mounted on a FR4 (20×20×0.8mm)
W
Transconductance
gfs
*6
V
DS
= -10V, ID = -5A
4.0
8.0-S
Gate input resistannce
R
G
f = 1MHz, open drain
-
9.5
-
mW
VGS= -4.5V, ID= -2.5A
-5272
VGS= -4.0V, ID= -2.5A
-5880
VGS= -10V, ID= -5A, Tj=125C
Static drain - source
on - state resistance
R
DS(on)
*6
VGS= -10V, ID= -5A
-3650-4563V
Gate threshold voltage
temperature coefficient
ΔV
(GS)th
ΔT
j
ID = -1mA
referenced to 25°C
-
3.9
-
mV/C
Gate threshold voltage
V
GS (th)
V
DS
= -10V, ID = -1mA
-1--2.5
mA
Gate - Source leakage current
I
GSS
V
GS
= 20V, V
DS
= 0V
-
-
10
mA
Zero gate voltage drain current
I
DSS
V
DS
= -30V, V
GS
= 0V
-
-
-1
V
Breakdown voltage
temperature coefficient
ΔV
(BR)DSS
ΔT
j
ID = -1mA
referenced to 25C
-
-25
-
mV/C
Drain - Source breakdown
voltage
V
(BR)DSS
V
GS
= 0V, ID = -1mA
-30
-
-
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
lThermal resistance
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - ambient
R
thJA
*5
--125
°C/W
Thermal resistance, junction - ambient
R
thJA
*4
--62.5
°C/W
2/11
2012.06 - Rev.C
Page 3
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
*6 Plused
ns
Reverse recovery charge
Q
rr
*6
-1530
mC
Reverse recovery time
t
rr
*6
IS = -5A
di/dt = 100A / ms
-2040
A
Forward voltage
V
SD
*6
V
GS
= 0V, Is = -5.0A
-
-
-1.2
V
Inverse diode continuous,
forward current
IS
*1
Ta = 25°C
-
-
-1.6
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.-2.4
-
Gate - Drain charge
Q
gd
*6
-
3.6
-
nC
V
DD
⋍ -15V, ID = -5A
VGS = -10V
-17-
Gate - Source charge
Q
gs
*6
V
DD
⋍ -15V, ID = -5A
VGS = -5V
V
DD
⋍ -15V, ID = -5A
VGS = -5V
-
9.2
-
Total gate charge
Q
g
*6
-
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Turn - on delay time
t
d(on)
*6
V
DD
⋍ -15V, V
GS
= -10V
-9-
ns
Rise time
t
r
*6
ID = -2.5A
-25-
Turn - off delay time
t
d(off)
*6
RL = 6.0W
-55-
Fall time
t
f
*6
RG = 10W
-
30
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
pF
Output capacitance
C
oss
V
DS
= -10V
-
120
-
Reverse transfer capacitance
C
rss
f = 1MHz
Input capacitance
C
iss
V
GS
= 0V
-
850--
120
-
3/11
2012.06 - Rev.C
Page 4
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
1
10
100
1000
10000
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
0.001
0.01
0.1
1
10
0.0001 0.01 1 100
T
a
=25ºC
Single Pulse
Rth(ch
-a)=62.5ºC/W
Rth(ch
-a)(t)=r(t)×Rth(ch-a)
Mounted on ceramic board
(30mm × 30mm × 0.8mm)
top D=1
D=0.5
D=0.1
D=0.05
D=0.01
bottom Signle
Fig.1 Power Dissipation Derating Curve
Power Dissipation : P
D
/P
D
max. [%]
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r
(t)
Pulse Width : PW [s]
Fig.4 Single Pluse Maxmum Power dissipation
Peak Transient Power : P(W)
Pulse Width : PW [s]
0.01
0.1
1
10
100
0.1 1 10 100
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 100μs
PW = 1ms
PW = 10ms
DC Operation
T
a
=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0
20
40
60
80
100
120
0 50 100 150 200
4/11
2012.06 - Rev.C
Page 5
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -3.0V
VGS= -3.5V
Ta= 25ºC
Fig.5 Avalanche Current vs Inductive Load
Avalanche Current : -I
AR
[A]
Coil Inductance : L [mH]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : E
AS
/ E
AS
max. [%]
Junction Temperature : Tj [ºC]
Fig.7 Typical Output Characteristics(I)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
Fig.8 Typical Output Characteristics(II)
Drain Current : -I
D
[A]
Drain - Source Voltage : -VDS [V]
0
2
4
6
8
10
0 2 4 6 8 10
VGS= -2.5V
VGS= -3.0V
VGS= -10V
VGS= -4.5V
VGS= -3.5V
Ta= 25ºC
0.01
0.1
1
10
100
0.01 0.1 1 10 100
Starting T
ch
=25
ºC
V
DD
= -15V
V
GS
= -10V
R
G
=10W
Single Pulse
0%
20%
40%
60%
80%
100%
120%
0 25 50 75 100 125 150 175
5/11
2012.06 - Rev.C
Page 6
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
0.001
0.01
0.1
1
10
1.0 1.5 2.0 2.5 3.0
V
DS
= -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0
1
10
100
0.1 1.0 10.0
V
DS
= -10V
Ta = -25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
Fig.9 Breakdown Voltage
vs. Junction Temperature
Drain - Source Breakdown Voltage : -V
(BR)DSS
[V]
Junction Temperature : Tj [°C]
Fig.10 Typical Transfer Characteristics
Drain Current : -I
D
[A]
Gate - Source Voltage : -VGS [V]
Fig.11 Gate Threshold Voltage
vs. Junction Temperature
Gate Threshold Voltage : -V
GS(th)
[V]
Junction Temperature : Tj [°C]
Fig.12 Transconductance vs. Drain Current
Transconductance : g
fs
[S]
Drain Current : -ID [A]
0
20
40
60
-50 0 50 100 150
V
GS
=0V
ID= -1mA
0
1
2
3
-50 0 50 100 150
V
DS
= -10V
ID= -1mA
6/11
2012.06 - Rev.C
Page 7
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
10
100
1000
0.1 1 10
Ta= 25ºC
VGS= -4.0V
VGS= -4.5V
VGS= -10V
0
20
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14
Ta= 25ºC
ID= -2.5A
ID= -5.0A
Fig.13 Drain Current Derating Curve
Drain Current Dissipation
: I
D
/ I
D
max. (%)
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Junction Temperature : Tj [ºC]
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Gate - Source Voltage : VGS [V]
0
0.2
0.4
0.6
0.8
1
1.2
-25 0 25 50 75 100 125 150
0
20
40
60
-50 -25 0 25 50 75 100 125 150
V
GS
= -10V
ID= -5.0A
7/11
2012.06 - Rev.C
Page 8
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
10
100
1000
0.1 1 10
VGS= -4.5V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
10
100
1000
0.1 1 10
V
GS
= -10V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
10
100
1000
0.1 1 10
VGS= -4.0V
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
Fig.18 Static Drain - Source On - State
Resistance vs. Drain Current(III)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : I-D [A]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
Fig.19 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Static Drain - Source On-State Resistance
: R
DS(on)
[mW]
Drain Current : -ID [A]
8/11
2012.06 - Rev.C
Page 9
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lElectrical characteristic curves
10
100
1000
10000
0.01 0.1 1 10 100
Ta = 25ºC
f=1MHz
VGS=0V
Ciss
Coss
Crss
1
10
100
1000
10000
0.0 0.1 1.0 10.0
Ta = 25ºC
VDD= -15V
VGS= -10V
RG=10W
tr
tf
td(on)
td(off)
Fig.20 Typical Capacitance
vs. Drain - Source Voltage
Capacitance : C [pF]
Drain - Source Voltage : -VDS [V]
Fig.22 Dynamic Input Characteristics
Gate - Source Voltage : -V
GS
[V]
Total Gate Charge : Qg [nC]
Fig.21 Switching Characteristics
Switching Time : t [ns]
Drain Current : -ID [A]
Fig.23 Source Current
vs. Source Drain Voltage
Source Current : -I
S
[A]
Source-Drain Voltage : -VDS [V]
0
2
4
6
8
10
0 5 10 15 20
Ta = 25ºC
VDD= -15V
ID= -5.0A
RG=10W
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
V
GS
= 0V
9/11
2012.06 - Rev.C
Page 10
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Data Sheet
RRH050P03
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform
10/11
2012.06 - Rev.C
Page 11
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
RRH050P03
lDimensions (Unit : mm)
Dimension in mm/inches
SOP8
Patterm of terminal position areas
H
E
e
A1
A2
A
c
D
b
x S A
A
y
s
S
E
A3
L1
Lp
e1
b2
l1
e
MIN MAX MIN MAX
A - 1.75 - 0.069
A1
A2 1.40 1.60 0.055 0.063
A3
b 0.30 0.50 0.012 0.02
c 0.10 0.30 0.004 0.012
D 4.80 5.20 0.189 0.205
E 3.75 4.05 0.148 0.159
e
HE 5.70 6.30 0.224 0.248
L1 0.50 0.70 0.02 0.028
Lp 0.65 0.85 0.026 0.033
x
y
MIN MAX MIN MAX
b2 - 0.65 - 0.026
e1
l1 - 1.15 - 0.045
0.25
0.01
5.15
0.203
0.15
0.006
1.27
0.05
DIM
MILIMETERS
INCHES
0.15
0.006
0.10
0.004
DIM
MILIMETERS
INCHES
11/11
2012.06 - Rev.C
Page 12
Notes
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The content specied herein is subject to change for improvement without notice.
The content specied herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specied in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specied herein is intended only to show the typical functions of and
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implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
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While ROHM always makes effor ts to enhance the quality and reliability of its Products, a
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Please be sure to implement in your equipment using the Products safety measures to guard
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