Datasheet RN5VM111C-TR, RN5VM111D-TR, RN5VM112C-TR, RN5VM112D-TR Datasheet (RICOH)

APPLICATION MANUAL

Li-lon BATTERY PROTECTOR

RN5VM1

××

C/D SERIES

NO. EA-041-9803

ELECTRONIC DEVICES DIVISION

NOTICE

1. The products and the product specifications described in this application manual are subject to change or
discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to
use the products, please refer to Ricoh sales representatives for the latest information thereon.

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4. The technical information described in this application manual shows typical characteristics of and example
application circuits for the products. The release of such information is not to be construed as a warranty of or a
grant of license under Ricoh's or any third party's intellectual property rights or any other rights.

5. The products listed in this document are intended and designed for use as general electronic components in
standard applications (office equipment, computer equipment, measuring instruments, consumer electronic
products, amusement equipment etc.). Those customers intending to use a product in an application requiring
extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of
the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic
control system, automotive and transportation equipment, combustion equipment, safety devices, life support
system etc.) should first contact us.

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products are likely to fail with certain probability. In order prevent any injury to persons or damages to property
resulting from such failure, customers should be careful enough to incorporate safety measures in their design,
such as redundancy feature, fire-containment feature and fail-safe feature. We do not assume any liability or
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7. Anti-radiation design is not implemented in the products described in this application manual.

8. Please contact Ricoh sales representatives should you have any questions or comments concerning the
products or the technical information.

June 1995

RN5VM1

××

C/D Series

APPLICATION MANUAL

CONTENTS

OUTLINE

......................................................................................................

1

FEATURES

...................................................................................................

1

APPLICATIONS

.............................................................................................

2

BLOCK DIAGRAMS

.......................................................................................

2

SELECTION GUIDE

.......................................................................................

2

PIN CONFIGURATION

...................................................................................

3

PIN DESCRIPTION

........................................................................................

3

ABSOLUTE MAXIMUM RATINGS

...................................................................

4

ELECTRICAL CHARACTERISTIC

..................................................................

5

TIMING DIAGRAM

.........................................................................................

9

OPERATION

................................................................................................

11

TEST CIRCUIT

............................................................................................

13

TYPICAL CHARACTERISTICS

.....................................................................

15

1) Over-charge Threshold VDET1 (V)

.....................................................................

15

2) Over-discharge threshold VDET2 (V)

..................................................................

15

3) Excess current threshold VDET3 (V)

...................................................................

15

4) Short circuit protector Threshold Vshort (V)

.........................................................

15

5) Output Delay of Over-charge tVDET1 (ms)

............................................................

15

6) Output Delay of Over-discharge tVDET2 (ms)

........................................................

15

7) Output Delay of Excess current tVDET3 (ms)

.........................................................

16

8) Output Delay of Short circuit Protector tshort (µs)

..................................................

16

9) Over-charge Threshold Hysteresis VHYS1 (mV)

.....................................................

16

10) Supply Current IDD (µA)

................................................................................

16

11) Standby Current Istandby (µA)

........................................................................

16

12) COUT Nch Driver ON Voltage VOL1 (V)

...............................................................

17

13) COUT Pch Driver ON Voltage VOH1 (V)

...............................................................

17

14) DOUT Nch Driver ON Voltage VOL2 (V)

...............................................................

17

15) DOUT Pch Driver ON Voltage VOH2 (V)

...............................................................

17

16) Output Delay of Over-charge tVDET1 (ms)

............................................................

18

17) Output Delay of Short protection tshort (µs)

.........................................................

18

18) Output Delay of Excess Current tVDET3 (ms)

........................................................

18

19) Excess Current Threshold VDET3 (V)

.................................................................

18

20) Over-charge Threshold VDET1 (V)

.....................................................................

18

TYPICAL APPLICATION

..............................................................................

19

APPLICATION HINTS

...................................................................................

19

PACKAGE DIMENSION

................................................................................

20

TAPING SPECIFICATION

.............................................................................

20

1

Li-lon BATTERY PROTECTOR

RN5VM1××C/D SERIES

OUTLINE

The RN5VM Series are protection ICs for over-charge/discharge of rechargeable one-cell Lithium-ion (Li+) batteries by

CMOS process.

The RN5VM Series can detect over-charge/discharge of Li+ one-cell and excess load current, further include a short cir-

cuit protector for preventing large external short circuit current.

Each of these ICs is composed of three voltage detectors, a reference unit, a hysteresis circuit, and a short circuit protec-

tor. When charging voltage crosses the detector threshold from a low value to a value higher than V

DET1, the output of

C

OUT pin, the output of over-charge detector/VD1, switches to low level, ..charger’s negative pin level. After detecting over-

charge the VD1 can be reset and the output of C

OUT pin becomes “H” when the VDD voltage is coming down to a level low-

er than “V

DET1 - VHYS1”, or when a charger is disconnected from the battery pack while the VDD level is in between “VDET1”

and “V

DET1 - VHYS1” in the RN5VM1××C version.

While in the RN5VM1

××D version after detecting over-charge, any load current can not be drawn from the battery pack

when the V

DD voltage stays over “VDET1 - VHYS1”, excepting that the VD1 can be reset and it allows to draw load current

when the V

DD voltage is coming down to a level lower than “VDET1 - VHYS1” because of a cell internal discharging.

The output of D

OUT pin, the output of over-discharge detector/VD2, switches to “L” after internally fixed delay time passed,

when discharging voltage crosses the detector threshold from a high value to a value lower than V

DET2. An excess load cur-

rent can be sensed and cut off after internally fixed delay time passed through the built in excess current detector, VD3,

with D

OUT being enabled to low level. Once after detecting excess current, the VD3 is released and DOUT level switches

to “H” by detaching a battery pack from a load system.

Further, short circuit protector makes D

OUT level to “L” immediately with external short circuit current and removing

external short circuit leads D

OUT level to “H”. After detecting over-discharge, supply current will be kept extremely “L” by

halting some internal circuits operation. The output delay of over-charge detectors can be set by connecting external capac-

itors. Output type of C

OUT and DOUT are CMOS. SOT23-6 is available.

FEATURES

• Low supply current

................................

Supply current TYP. 3.0µA

Standby current (after detecting over-discharge) TYP. 0.3µA

• High withstand voltage

..........................

Absolute maximum ratings 28V (V

DD–V-)

• High accuracy detector threshold

.......

Over-charge detector ±50mV

Over-discharge detector ±2.5%

• Variety of detector threshold

................

Over-charge detector threshold 4.0V to 4.4V/step of 0.01V

Over-discharge detector threshold 2.0V to 3.0V/step of 0.05V

• Built-in protection circuit

.......................

Excess current trip/Short circuit protector

• Output delay of over-charge

.................

Time delay at C

3= 0.01µF and VDD=4.3V 75ms for RN5VM111×

• Ultra small package

...............................

SOT-23-6

RN5VM1××C/D

2

APPLICATIONS

BLOCK DIAGRAM

• Over-charge/over-discharge protection for Li+ one-cell pack

• High precision protectors for cell-phones and any other gadgets using on board Li+ one-cell battery

SELECTION GUIDE

In the RN5VM1×××Series three of the input threshold for over-charge, over-discharge and excess current and taping type

can be designating at the user’s request by Part Number as follows:

RN5VM1

×××–×× ←Part Number

↑ ↑ ↑

a b c

VDD Ct

+

VD1

+

–

–

–

+

VD2

VD3

VSS

DOUT

COUT

V-

5

2

61

4

3

Level

Shift

Short Circuit
Detector

Delay

}

}

Code Description

a

Serial Number for the RN5VM Series designating input threshold for over-charge, over-discharge and

excess current detectors as well as hysteresis range for over-charge detector.

Designation of version symbols

b C : drawing load current is allowable after detecting over-charge.

D : drawing load current is not allowable after detecting over-charge.

c

Designation of Taping Type:

TR (refer to Taping Specification)

3

RN5VM1××C/D

PIN CONFIGURATION

1 2

3

6 4

(mark side)

5

•SOT-23-6

PIN DESCRIPTION

Pin No. Symbol Pin description

1 COUT Output of over-charge detection, CMOS output

2 Ct Pin for external capacitor setting output delay of VD1

3 VSS Ground

4 DOUT Output of over-discharge detection, CMOS output

5 VDD Power supply

6 V- Pin for charger negative input

RN5VM1××C/D

4

ABSOLUTE MAXIMUM RATINGS

Symbol Item Rating Unit

VDD Supply Voltage –0.3 to 12 V

V-

Input Voltage

V- pin V

DD–28 to VDD+0.3 V

Vct Ct pin Vss–0.3 to VDD+0.3 V

V

COUT

Output Voltage

C

OUT pin VDD–28 to VDD+0.3 V

VDOUT DOUT pin Vss–0.3 to VDD+0.3 V

PD Power Dissipation 150 mW

Topt Operating Temperature Range –40 to +85 ˚C

Tstg Storage Temperature Range –55 to +125 ˚C

ABSOLUTE MAXIMUM RATINGS

Absolute Maximum ratings are threshold limit values that must not be exceeded even for an instant under

any conditions. Moreover, such values for any two items must not be reached simultaneously. Operation

above these absolute maximum ratings may cause degradation or permanent damage to the device. These

are stress ratings only and do not necessarily imply functional operation below these limits.

Vss=0V

5

RN5VM1××C/D

ELECTRICAL CHARACTERISTIC

Symbol Item Conditions MIN. TYP. MAX. Unit

VDD1 Operating input voltage Voltage defined as VDD–VSS 1.5 10 V

Vst

Minimum operating voltage Voltage defined as V

DD–V-,

1.2 V

for 0V charging V

DD–Vss=0V

VDET1 Over-charge threshold voltage Detect rising edge of supply voltage 4.20 4.25 4.30 V

VHYS1

Over-charge threshold hysteresis range

0.15 0.2 0.25 V

tVDET1 Output delay time of over-charge C3=0.01µF, VDD=3.6V→ 4.3V 50 75 100 ms

VDET2

Over-discharge threshold voltage Detect falling edge of supply voltage 2.437 2.50 2.563 V

tVDET2 Output delay time of over-discharge VDD=3.6V→ 2.4V 7 10 13 ms

VDET3 Excess current threshold voltage

Detect rising edge of “V-” pin voltage

0.17 0.20 0.23 V

tVDET3 Output delay time of excess current VDD=3.0V 9 13 17 ms

Vshort Short detection voltage VDD=3.0V VDD–1.1 VDD–0.8 VDD–0.5 V

tshort

Output delay time of short detection

VDD=3.0V 5 50 µs

Rshort

Reset resistance for

V

DD=3.6V, V-=1.0V 50 100 150 kΩ

excess current protection

VOL1 Nch ON voltage of COUT IOL=50µA, VDD=4.4V 0.2 0.5 V

VOH1 Pch ON voltage of COUT IOH=–50µA, VDD=3.9V 3.4 3.8 V

VOL2 Nch ON voltage of DOUT IOL=50µA, VDD=2.4V 0.2 0.5 V

VOH2 Pch ON voltage of DOUT IOH=–50µA, VDD=3.9V 3.4 3.7 V

IDD Supply current VDD=3.9V, V-=0V 3.0 6.0 µA

Istandby Standby current V

DD=2.0V 0.3 0.6 µA

Topt=25˚C

*

) Please refer to Test Circuit unless otherwise specified.

• RN5VM111C

RN5VM1××C/D

6

Symbol Item Conditions MIN. TYP. MAX. Unit

VDD1 Operating input voltage Voltage defined as VDD–VSS 1.5 10 V

Vst

Minimum operating voltage Voltage defined as V

DD–V-,

1.2 V

for 0V charging VDD–Vss=0V

VDET1 Over-charge threshold voltage Detect rising edge of supply voltage 4.30 4.35 4.40 V

VHYS1

Over-charge threshold hysteresis range

0.15 0.20 0.25 V

tVDET1 Output delay time of over-charge C3=0.01µF, VDD=3.6V→ 4.4V 55 80 105 ms

VDET2 Over-discharge threshold voltage Detect falling edge of supply voltage 2.437 2.500 2.563 V

tVDET2 Output delay time of over-discharge VDD=3.6V→ 2.4V 7 10 13 ms

VDET3 Excess current threshold voltage

Detect rising edge of “V-” pin voltage

0.17 0.20 0.23 V

tVDET3 Output delay time of excess current VDD=3.0V 9 13 17 ms

Vshort Short detection voltage VDD=3.0V VDD–1.1 VDD–0.8 VDD–0.5 V

tshort

Output delay time of short detection

VDD=3.0V 5 50 µs

Rshort

Reset resistance for

V

DD=3.6V, V-=1.0V 50 100 150 kΩ

excess current protection

VOL1 Nch ON voltage of COUT IOL=50µA, VDD=4.4V 0.2 0.5 V

VOH1 Pch ON voltage of COUT IOH=–50µA, VDD=3.9V 3.4 3.8 V

VOL2 Nch ON voltage of DOUT IOL=50µA, VDD=2.4V 0.2 0.5 V

VOH2 Pch ON voltage of DOUT IOH=–50µA, VDD=3.9V 3.4 3.7 V

IDD Supply current VDD=3.9V, V-=0V 3.0 6.0 µA

Istandby Standby current V

DD=2.0V 0.3 0.6 µA

Topt=25˚C

*

) Please refer to Test Circuit unless otherwise specified.

• RN5VM112C

7

RN5VM1××C/D

Symbol Item Conditions MIN. TYP. MAX. Unit

VDD1 Operating input voltage Voltage defined as VDD–VSS 1.5 10 V

Vst

Minimum operating voltage Voltage defined as V

DD–V-,

1.2 V

for 0V charging VDD–Vss=0V

VDET1 Over-charge threshold voltage Detect rising edge of supply voltage 4.20 4.25 4.30 V

VHYS1

Over-charge threshold hysteresis range

0.15 0.20 0.25 V

tVDET1 Output delay time of over-charge C3=0.01µF, VDD=3.6V→ 4.3V 50 75 100 ms

VDET2 Over-discharge threshold voltage Detect falling edge of supply voltage 2.437 2.500 2.563 V

tVDET2 Output delay time of over-discharge VDD=3.6V→ 2.4V 7 10 13 ms

VDET3 Excess current threshold voltage

Detect rising edge of “V-” pin voltage

0.17 0.20 0.23 V

tVDET3 Output delay time of excess current VDD=3.0V 9 13 17 ms

Vshort Short detection voltage VDD=3.0V VDD–1.1 VDD–0.8 VDD–0.5 V

tshort

Output delay time of short detection

VDD=3.0V 5 50 µs

Rshort

Reset resistance for

V

DD=3.6V, V-=1.0V 50 100 150 kΩ

excess current protection

VOL1 Nch ON voltage of COUT IOL=50µA, VDD=4.4V 0.2 0.5 V

VOH1 Pch ON voltage of COUT IOH=–50µA, VDD=3.9V 3.4 3.8 V

VOL2 Nch ON voltage of DOUT IOL=50µA, VDD=2.4V 0.2 0.5 V

VOH2 Pch ON voltage of DOUT IOH=–50µA, VDD=3.9V 3.4 3.7 V

IDD Supply current VDD=3.9V, V-=0V 3.0 6.0 µA

Istandby Standby current V

DD=2.0V 0.3 0.6 µA

Topt=25˚C

*

) Please refer to Test Circuit unless otherwise specified.

• RN5VM111D

RN5VM1××C/D

8

Symbol Item Conditions MIN. TYP. MAX. Unit

VDD1 Operating input voltage Voltage defined as VDD–VSS 1.5 10 V

Vst

Minimum operating voltage Voltage defined as V

DD–V-,

1.2 V

for 0V charging VDD–Vss=0V

VDET1 Over-charge threshold voltage Detect rising edge of supply voltage 4.30 4.35 4.40 V

VHYS1

Over-charge threshold hysteresis range

0.15 0.20 0.25 V

tVDET1 Output delay time of over-charge C3=0.01µF, VDD=3.6V→ 4.4V 55 80 105 ms

VDET2 Over-discharge threshold voltage Detect falling edge of supply voltage 2.437 2.500 2.563 V

tVDET2 Output delay time of over-discharge VDD=3.6V→ 2.4V 7 10 13 ms

VDET3 Excess current threshold voltage

Detect rising edge of “V-” pin voltage

0.17 0.20 0.23 V

tVDET3 Output delay time of excess current VDD=3.0V 9 13 17 ms

Vshort Short detection voltage VDD=3.0V VDD–1.1 VDD–0.8 VDD–0.5 V

tshort

Output delay time of short detection

VDD=3.0V 5 50 µs

Rshort

Reset resistance for

V

DD=3.6V, V-=1.0V 50 100 150 kΩ

excess current protection

VOL1 Nch ON voltage of COUT IOL=50µA, VDD=4.4V 0.2 0.5 V

VOH1 Pch ON voltage of COUT IOH=–50µA, VDD=3.9V 3.4 3.8 V

VOL2 Nch ON voltage of DOUT IOL=50µA, VDD=2.4V 0.2 0.5 V

VOH2 Pch ON voltage of DOUT IOH=–50µA, VDD=3.9V 3.4 3.7 V

IDD Supply current VDD=3.9V, V-=0V 3.0 6.0 µA

Istandby Standby current V

DD=2.0V 0.3 0.6 µA

Topt=25˚C

*

) Please refer to Test Circuit unless otherwise specified.

• RN5VM112D

9

RN5VM1××C/D

TIMING DIAGRAM

• RN5VM1××C

Charging Charging

Charging

Charging

Discharging

Discharging

Discharging

Excess
current

Short

circuit

Open Open

Charging
Current

Discharging
Current

0

DOUT

COUT

VDD

V-

t

t

t

t

t

VSS

VSS

VDD

VDD

VDD

VDET2

VDET1

VDET3

VDET1–VHYS1

Vshort

V-

tVDET1

tVDET1

tVDET2 tVDET2 tVDET3 tshort

Charging/
Discharging
Current

RN5VM1××C/D

10

• RN5VM1××D

Charging

Charging

Charging

Discharging

Discharging

Discharging

Open

Open

Open

0

DOUT

COUT

VDD

V-

t

t

t

t

t

V

SS

VSS

VDD

VDD

VDD

VDET2

VDET1

VDET3

VDET1–VHYS1

Vshort

V-

Self

discharging

tVDET1

tVDET3

tVDET2 tVDET2

tVDET3 tshort

Charging
Current

Discharging
Current

Excess
current

Short

circuit

Charging/
Discharging
Current

11

RN5VM1××C/D

OPERATION

· The VD1 monitors VDD pin voltage. When the VDD voltage crosses over-charge detector threshold VDET1 from a low val-

ue to a value higher than the V

DET1, the VD1 can sense over-charging and an external charge control Nch-MOS-FET

turns to “OFF” with C

OUT pin being at “L”.

· An output delay time for over-charge detection can be set by an external capacitor C

3 connecting the Vss pin and Ct pin.

The external capacitor can make a delay time from a moment detecting over-charge to a time output a signal which

enables charge control Nch-MOS-FET for turning to “OFF”. Though the V

DD voltage would be going up to a higher lev-

el than V

DET1 if it is within a time period of the output delay time, VD1 would not output a signal for turning “OFF” of

charg control Nch-MOS-FET. The output delay time can be calculated as below:

tVDET1 =

C

3 ×

(

VDD– 0.7

)

0.48 × 10

–6

· A level shifter incorporated in a buffer driver for the COUT pin makes the “L” of COUT pin to the V- pin voltage and the “H”

of C

OUT pin is set to VDD voltage with CMOS buffer.

• VD1/Over-Charge Detector

· After detecting over-charge, the VD1 would not be released and C

OUT level would not switch to “H” again with the excep-

tion that a cell voltage reaches to a lower value than “V

DET1–VHYS1” by self discharge of cell or else. After detecting over-

charge, when the V

DD level stays at a value higher than “VDET1–VHYS1”, to connect battery pack to a system load makes

battery pack being disabled at for charging or discharging because of excess current detector operated being D

OUT “L”.

Reset conditions from overcharging of RN5VM1

××C

· There can be two cases to reset the VD1 making the COUT pin level to “H” again after detecting over-charge. Resetting

the VD1 makes the charging system ready for resumption of charging process.

The first case is in such condition that a time when the V

DD voltage is coming down to a level lower than “VDET1–VHYS1”.

While in the second case, disconnecting a charger from the battery pack can make the VD1 resetting when the V

DD lev-

el is within hysteresis width (V

DET1–VHYS1≤VDD

<

V

DET1)

· After detecting over-charge with the V

DD voltage of higher than VDET1, connecting system load to the battery pack makes

load current allowable through parasitic diode of external charge control Nch-MOS-FET. The C

OUT level would be “H”

when the V

DD level is coming down to a level below the VDET1 by continuous drawing of load current.

Reset conditions from overcharging of RN5VM1

××D

RN5VM1××C/D

12

· The VD2 monitors a VDD pin voltage. When the VDD voltage crosses the over-discharge detector threshold VDET2 from

a high value to a value lower than the V

DET2, the VD2 can sense an over-discharging and the external discharge control

Nch-MOS-FET turns to “OFF” with the D

OUT pin being at “L”.

· Resetting the VD2 with the D

OUT pin level being “H” again after detecting over-discharge is only possible by connecting

a charger to the battery pack. When the V

DD voltage stays under over-discharge detector threshold VDET2 charge current

can flow through parasitic diode of external discharge control Nch-MOS-FET, then after the V

DD voltage comes up to a

value larger than V

DET2 discharging process would be advanced through “ON” state discharge control Nch-MOS-FET.

Connecting a charger to the battery pack makes the D

OUT level being “H” instantaneously when the VDD voltage is high-

er than V

DET2.

· When a cell voltage equals to zero, connecting charger to the battery pack makes the system allowable for charge with

higher charge voltage than Vst, 1.2V Max.

· An output delay time for the over-discharge detection is fixed internally. Though the V

DD voltage would be going down

to a lower level than V

DET2 if it is within a time period of the output delay time, VD2 would not output a signal for turning

“OFF” of discharge control Nch-MOS-FET.

· After detection of an over-discharge by VD2, supply current would be reduced to 0.3µA TYP. at V

DD=2.0V and into stand-

by, only the charger detector is operating.

· The output type of D

OUT pin is CMOS having “H” level of VDD and “L” level of Vss.

• VD2/Over-Discharge Detector

· Both of the excess current detector and short circuit protector can work when both control Nch-MOS-FETs are in “ON”

state.

When the V- pin voltage is going up to a value between the short protection voltage Vshort and excess current threshold

V

DET3, the excess current detector operates and further soaring of V- pin voltage higher than Vshort makes the short cir-

cuit protector enabled. As a result the external discharge control Nch-MOS-FET turns to “OFF” with the D

OUT pin being

at “L”.

· An output delay time for the excess current detector is internally fixed, 13ms TYP. at V

DD=3.0V. A quick recovery of V-

pin level from a value between Vshort and V

DET3 within the delay time keeps the discharge control FET staying

“ON”state.

When the short circuit protector is enabled, the D

OUT would be “L” and its delay time would be 5µs TYP.

· The V- pin has a built-in pull down resistor, TYP.100kΩ, connected to the Vss pin.

After an excess current or short circuit protection is detected, removing a cause of excess current or external short cir-

cuit makes an external discharge control Nch-MOS-FET to an “ON” state automatically with the V- pin level being down

to the Vss level through the built-in pull down resistor.

· When V

DD voltage is higher than VDET2 at a time when the excess current is detected the 5VM does not enter a standby

mode, while V

DD voltage is lower than VDET2 the 5VM enters a standby mode.

After detecting short circuit the 5VM will not enter a standby mode.

• VD3/Excess Current Detector, Short Circuit Protector

13

RN5VM1××C/D

TEST CIRCUIT

VDD

VSS

V-

C

OUT

Ct

V

0.01µF

1

3

5

6

2

Test Circuit 1

VDD

VSS

V-

D

OUT

V

4

3

5

6

Test Circuit 2

DOUT

VDD

VSS

V-

1

5

V

3

6

50µA

Test Circuit 5

DOUT

VDD

VSS

V-

4

5

V

3

6

50µA

Test Circuit 6

DOUT

VDD

VSS

V-

3

5

6

V

A

4

Test Circuit 3

COUT

VDD

VSS

V-

5

V

3

6

50µA

1

Test Circuit 4

RN5VM1××C/D

14

DOUT

VDD

VSS

V-

5

V

3

6

50µA

4

Test Circuit 7

VDD

VSS

V-

3

5

6

A

Test Circuit 8

COUT

C3

C1

R1

Ct

V

DD

VSS

V-

V

3

6

5

2

1

Test Circuit 9

DOUT

VDD

VSS

V-

R

2

C2

3

4

5

6

V

Test Circuit 10

The typical characteristics were obtained by use of these test circuits

Test Circuit 1 : Typical characteristics 1) 5) 9) 16)

Test Circuit 2 : Typical characteristics 2) 6)

Test Circuit 3 : Typical characteristics 3) 4) 7) 8) 18)

Test Circuit 4 : Typical characteristics 12)

Test Circuit 5 : Typical characteristics 13)

Test Circuit 6 : Typical characteristics 14)

Test Circuit 7 : Typical characteristics 15)

Test Circuit 8 : Typical characteristics 10) 11)

Test Circuit 9 : Typical characteristics 20)

Test Circuit 10 : Typical characteristics 17) 19)

15

RN5VM1××C/D

TYPICAL CHARACTERISTICS

1) Over-charge threshold vs. Temperature

Over-charge Threshold VDET1(V)

Temperature Topt (˚C)

4.20

4.21

4.22

4.23

4.24

4.25

4.26

4.27

–60 –40 –20 0 20 40 60 80 100

RN5VM111×

3) Excess Current Threshold vs. Temperature

Temperature Topt (˚C)

Excess Current Threshold VDET3(V)

0.190

0.195

0.200

0.205

0.210

–60 –40 –20 0 20 40 60 80 100

RN5VM111×/112×

5) Output Delay of Over-charge vs. Temperature

20

30

40

50

60

70

80

90

100

–60 –40 –20 0 20 40 60 80 100

Output Delay of Over-charge

tVDET1(ms)

RN5VM111×

Temperature Topt (˚C)

C3=0.01µF, VDD=3.6V→4.3V

2) Over-discharge vs. Temperature

Temperature Topt (˚C)

Over-discharge Threshold VDET2(V)

2.47

2.48

2.49

2.50

2.51

2.52

2.53

2.54

–60 –40 –20 0 20 40 60 80 100

RN5VM111×/112×

4) Short circuit protector Threshold vs. Temperature

2.10

2.15

2.20

2.25

2.30

2.35

2.40

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

Temperature Topt (˚C)

V

DD=3.0V

Short circuit protector Threshold Vshort(V)

6) Output Delay of Over-discharge vs. Temperature

2

4

6

8

10

12

14

16

18

–60 –40 –20 0 20 40 60 80 100

Temperature Topt (˚C)

Output Delay of Over-discharge

tVDET2(ms)

RN5VM111×/112×

VDD=3.6V→2.4V

RN5VM1××C/D

16

7) Output Delay of Excess current vs. Temperature

Temperature Topt (˚C)

0

2

4

6

8

10

12

14

16

18

20

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

Output Delay of Excess current

tVDET3(ms)

VDD=3.0V

9)

Over-charge Threshold Hysteresis vs.Temperature

Over -charge Treshold Hysteresis V

HYS1

(mV)

Temperature Topt (˚C)

0.190

0.195

0.200

0.205

0.210

–60 –40 –20 0 20 40 60 80 100

RN5VM111×/112×

11) Standby Current vs. Temperature

Standby Current Istandby(µA)

Temperature Topt (˚C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

VDD=2.0V

8)

Output Delay of Short circuit protector vs. Temperature

Output Delay of Short circuit

protector

tshort(µs)

Temperature Topt (˚C)

0

2

4

6

8

10

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

VDD=3.0V

10) Supply Current vs. Temperature

Supply Current IDD(µA)

Temperature Topt (˚C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

VDD=3.9V, V-=0V

17

RN5VM1××C/D

12) Cout Nch Driver On Voltage vs. Temperature

C

OUT

Nch Driver ON Voltage V

OL1

(V)

IOL=50µA,VDD=4.4V

Temperature Topt (˚C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

14) DOUT Nch Driver ON Voltage vs. Temperature

D

OUT

Nch Driver ON Voltage V

OL2

(V)

IOL=50µA,VDD=2.4V

Temperature Topt (˚C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

13) COUT Pch Driver ON Voltage vs. Temperature

C

OUT

Pch Driver ON Voltage V

OH1

(V)

IOH=–50µA,VDD=3.9V

Temperature Topt (˚C)

3.60

3.65

3.70

3.75

3.80

3.85

3.90

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

15) DOUT Pch Driver ON Voltage vs. Temperature

D

OUT

Pch Driver ON Voltage V

OH2

(V)

IOH=–50µA,VDD=3.9V

Temperature Topt (˚C)

3.60

3.65

3.70

3.75

3.80

3.85

3.90

–60 –40 –20 0 20 40 60 80 100

RN5VM1×××

RN5VM1××C/D

18

16)

Output Delay of Over-charge vs. Capacitance C

3

External Capacitance C3(µF)

Output Delay of Over-charge

t

VDET1

(ms)

200
100

0

300

400

500

600

700

800

0 0.05 0.1

RN5VM111×

VDD=3.6V→4.3V

18) Output Delay of Excess Current vs. VDD

Output Delay of Excess Current tVDET3(ms)

Supply Voltage VDD(V)

0.00

5.00

10.00

15.00

20.00

25.00

2.5 3.0 3.5 4.0 4.5

RN5VM1×××

20)

Over-charge Threshold vs. External Resistance R

1

Over-charge Threshold VDET1(V)

External Resistance R1(Ω)

C1=0 to 0.68µF

0 200 400 600 800 1000

RN5VM111×

4.250

4.246

4.252

4.254

4.256

4.258
C3=0.22µF

4.248

C3=0.1µF

C3=0.01µF

17)

Output Delay of Short protection vs. Capacitance C

2

External Capacitance C2(µF)

Output Delay of short protection

t

short(µs)

1

10

100

1000

10000

0.001 0.01 0.1 1

RN5VM1×××

R2=1kΩ,VDD=3.0V

19)

Excess Current Threshold vs. External resistance R

2

Excess Current Threshold

t

DET3

(ms)

VDD=3.0V

0.202

0.203

0.204

0.205

0.206

0.207

0.208

0.209

0.210

0 0.5 1 1.5 2 2.5 3

RN5VM111×/112×

External Resistance R2(kΩ)

19

RN5VM1××C/D

TYPICAL APPLICATION

3

4 1

2

5

6

+

–

RN5VM1×××

1kΩ

R

2

C2

100Ω

R

1

0.1µF

VDD

V-

DOUT COUT

Vss

Ct

C1

C3

0.1µF

0.01µF

NOTE ON EXTERNAL COMPONENTS

•R1 and C1 will stabilize a supply voltage to the RN5VM. A recommended R1 value is less than 1kΩ.

A larger value of R

1 leads higher detection voltage, makes some errors, because of shoot through current

flowed in the RN5VM.

•R

2 and C2 will stabilize a V- pin voltage. The resetting from over-discharge with connecting charger possibly

be disabled by larger value of R

2. Recommended value is less than 1kΩ.

After an over-charge detection, a system may not draw load current when a battery pack is connected to it in

the C version with R2 and C2 time constants at relatively larger settings.

Recommended C

2 value is less than 1µF.

•R

1 and R2 can operate as a current limiter against setting cell reverse direction or for applying excess

charging voltage to the 5VM. While smaller R

1 and R2 may cause an over power dissipation rating of the

RN5VM and a total of “R

1+R2” should be more than 1kΩ.

•The time constants R

1×C1 or R2×C2 must have a relations as below:

R

1×C1≤R2 ×C2

Because in case that R1×C1, time constant for VDD pin, would be larger than R2×C2, time constant for V- pin,

then the RN5VM might be into a standby mode after detecting excess current or short circuit current.

RN5VM1××C/D

20

PACKAGE DIMENSION (Unit : mm)

· SOT-23-6

TAPING SPECIFICATION (Unit : mm)

· SOT-23-6

2.9±0.2

0.8±0.1

+0.1
–0.2

0.4

1.9±0.2

(0.95) (0.95)

6 5 4

1 2 3

+0.2

–0.1

1.6

+0.2
–0.1

1.1

+0.1
–0.05

0.15

2.8±0.3

0 to 0.1

0.2 MIN.

User Direction of Feed

T R

2.0MAX.

0.3±0.1

4.0±0.1

2.0±0.05

4.0±0.1

3.3

3.2

8.0±0.3

1.75±0.1

3.5±0.05

1.5

+0.1
–0

ø

RICOH COMPANY, LTD.
ELECTRONIC DEVICES DIVISION

HEADQUARTERS

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ELECTRONIC DEVICES DIVISION

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