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TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type
(PCT process) (Bias Resistor built-in Transistor)
RN47A4
RN47A4
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
• Two devices are incorporated into an Ultra-Super-Mini (5 pin)
package.
• Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1 Q2
C
B
Q1
R1: 47 kΩ, R2: 47 kΩ
Q2
R1: 10 kΩ, R2: 47 kΩ
Q1: RN1104F
Q2: RN2107F
R1
R2
B
E
R1
Marking Equivalent Circuit
C
R2
JEDEC ―
E
JEITA ―
TOSHIBA 2-2L1D
Weight: 0.0062g (typ.)
(top view)
4 5
2 4
3 1 2
1
5 4
Q1
123
Q2
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RN47A4
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
(Ta = 25°C) (Q1)
CBO
CEO
EBO
C
50 V
50 V
10 V
100 mA
Maximum Ratings
Characteristics Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current I
(Ta = 25°C) (Q2)
CBO
CEO
EBO
C
−50 V
−50 V
6 V
−
100 mA
−
Maximum Ratings
Characteristics Symbol Rating Unit
Collector power dissipation PC (Note) 200 mW
Junction temperature Tj 150 °C
Storage temperature range T
(Ta = 25°C) (Q1, Q2 common)
stg
−
55~150 °C
Note: Total rating
2
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RN47A4
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency f
Collector output capacitance C
Input resistor R1 ⎯ 32.9 47 61.1 kΩ
Resistor ratio R1/R2 ⎯ 0.8 1.0 1.2
(Ta = 25°C) (Q1)
I
CBO
I
CEO
EBO
FE
CE (sat)
I (ON)
I (OFF)
T
ob
VCB = 50 V, IE = 0 ⎯ ⎯ 100
VCE = 50 V, IB = 0 ⎯ ⎯ 500
VEB = 10 V, IC = 0 0.082 ⎯ 0.15 mA
VCE = 5 V, IC = 10 mA 80
IC = 5 mA, IB = 0.25 mA
VCE = 0.2 V, IC = 5 mA 1.5
VCE = 5 V, IC = 0.1 mA 1.0 ⎯ 1.5 V
VCE = 10 V, IC = 5 mA ⎯ 250 ⎯ MHz
VCB = 10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF
⎯ ⎯
0.1 0.3 V
⎯
5.0 V
⎯
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current I
DC current gain h
Collector-emitter saturation voltage V
Input voltage (ON) V
Input voltage (OFF) V
Transition frequency f
Collector output capacitance C
Input resistor R1 ⎯ 7 10 13 kΩ
Resistor ratio R1/R2 ⎯ 0.171 0.213 0.255
(Ta = 25°C) (Q2)
I
CBO
I
CEO
EBO
FE
CE (sat)
I (ON)
I (OFF)
T
ob
VCB = −50 V, IE = 0 ⎯ ⎯ −100
VCE = −50 V, IB = 0 ⎯ ⎯ −500
VEB = −6 V, IC = 0 −0.081 ⎯ −0.15 mA
VCE = −5 V, IC = −10 mA 80
IC = −5 mA, IB = −0.25 mA
VCE = −0.2 V, IC = −5 mA
VCE = −5 V, IC = −0.1 mA −0.5 ⎯ −1.0 V
VCE = −10 V, IC = −5 mA ⎯ 200 ⎯ MHz
VCB = −10 V, IE = 0, f = 1 MHz ⎯ 3 ⎯ pF
−
⎯ ⎯
0.1 −0.3 V
⎯ −
0.7
⎯ −
1.8 V
nA
nA
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Q1
RN47A4
4
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Q2
RN47A4
COMMON
EMITTER
VCE =−5V
COLLECTOR CURRENT IC (uA)
INPUT VOLTAGE VI
COMMON
EMITTER
IC / IB = 20
(OFF)
(V)
VOLTAGE VCE(sat) (V)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT IC (mA)
5
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Q1, Q2 Co mmon
400
300
(mW)
C
200
100
POWER DISSIPATION P
0
0 175125 100 50 150 7525
AMBIENT TEMPERATURE Ta (°C)
*:Total Rating
RN47A4
Pc* – Ta
6
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RN47A4
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
030619EAA
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2004-04-28
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