Page 1
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
Features
Absolute
Maximum
Ratings
The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point
to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz
transmit/receive chipset. The RMWP26001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of power amplifier applications.
4 mil substrate
Small-signal gain 23 dB (typ.)
1dB compressed Pout 24 dBm (typ.)
Chip size 2.85 mm x 1.2 mm
Parameter Symbol Value Unit
Positive DC voltage (+4V Typical) Vd +6 Volts
Negative DC voltage Vg -2 Volts
Simultaneous (Vd - Vg) Vdg 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Baseplate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
D
IN
C
stg
jc
531 mA
+8 dBm
-30 to +85 °C
-55 to +125 °C
41.5 °C/W
Electrical
Characteristics
(At 25°C),
Ω system,
50
Vd=+4 V,
Quiescent Current
Idq=370 mA
Parameter Min Typ Max Unit
Frequency Range 24 26.5 GHz
Gate Supply Voltage
Gain Small Signal at
Pin= -8 dBm 20 23 dB
Gain Variation vs. Frequency 1 dB
Gain at 1 dB Compression 22 dB
Power Output at
1 dB Compression 24 dBm
Power Output Saturated:
Pin=+2 dBm 22 25 dBm
Drain Current at
Pin=-8 dBm 370 mA
Notes:
1. Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 370 mA.
Characteristic performance data and specifications are subject to change without notice.
1
(Vg) -0.3 V
Parameter Min Typ Max Unit
Drain Current at
1dB Compression 400 mA
Drain Current at Saturated:
Pin=+2 dBm 380 mA
Power Added Efficiency
(PAE): at P1dB 16 %
Input Return Loss
(Pin=-8 dBm) 12 dB
Output Return Loss
(Pin=-8 dBm) 12 dB
OIP3 33 dBm
www.raytheon.com/micro
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 2
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Figure 1
Functional Block
Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Drain Supply
Vd1
MMIC Chip
Drain Supply
Vd2
Drain Supply
Vd3
Drain Supply
Vd4
RF OUTRF IN
Figure 2
Chip Layout and
Bond Pad Locations
Chip Size is 2.85 mm
x 1.2 mm. x 100
µm.
Back of chip is RF
and DC ground
Dimensions in mm
0.0
1.2 1.2
0.7815
0.627
0.4725
0.0
0.0
Ground
(Back of Chip)
0.506 0.996 1.248 1.963
0.726
Gate Supply
Vg
2.85
0.735
0.428
0.5805
0.0
2.85
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 3
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3
Recommended
Application Schematic
Circuit Diagram
10,000pF
100pF
MMIC Chip
Ground
(Back of Chip)
L
L
Drain Supply
Vd=+4 V
100pF
L
10 µF
L
L
L
Gate Supply
Vg
L
L
100pF
L = Bond Wire Inductance
100pF
L
L
100pF
RF OUTRF IN
Figure 4
Recommended
Assembly Diagram
Vd
1
10,000pF
100pF
5mil Thick
Alumina
50-Ohm
RF
Input
2 mil Gap
Note:
1. Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
100pF
100pF
100pF
Vg
(Negative)
(Positive)
10µF
Die-Attach
80Au/20Sn
100pF
5 mil Thick
Alumina
50-Ohm
RF
Output
L< 0.015”
(4 Places)
www.raytheon.com/micro
Revised March 14, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 4
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
Performance
Data
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=370 mA.
RMWP26001, 26GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq= 370mA
26
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
0
24
22
20
18
S21 (dB)
16
S11
14
12
10
18 20 22 24 26 28 30
S21
S22
Frequency (GHz)
-2
-4
-6
-8
-10
-12
-14
-16
S21
S11
S22
S11, S22 (dB)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 5
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Performance
Data
RMWP26001, 26GHz Power Amplifier, Typical Performance,
Vd=4V, Idq= 370mA, Chip Bonded into 50ohm Test Fixture
40
30
S21
20
10
0
S21 (dB)
-10
-20
-30
-40
0 10203040
S11
Frequency (GHz)
S22
20
15
10
5
0
-5
-10
-15
-20
S21
S11
S22
S11, S22 (dB)
RMWP26001, 26GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq= 370mA
26
25
Pout
24
SS Gain
23
(dBm)
22
21
SS Gain (dB), Output Power at Pin=+2dBm
20
21 22 23 24 25 26 27
Frequency (GHz)
SS Gain
Pout
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 6
Worldwide Sales
Representatives
PRODUCT INFORMATION
North
America
Europe
Asia
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
[email protected]
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866-230-5453
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sales@hi–peak.com
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Finland
358-8-8251-100
fax: 358-8-8251-110
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[email protected]
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Chiyoda–Ku
Tokyo 100-6014 Japan
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fax: 81-3-4288-7243
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Worldwide
Distribution
Sales Office
Headquarters
Customer
Support
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United States
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet@
rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
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England
ME207XB
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United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
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France
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RIJN
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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