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RMWP23001
Datasheet (Raytheon)
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Datasheet RMWP23001 Datasheet (Raytheon)

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Page 1
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Features
Absolute
Maximum
Ratings
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
4 mil substrateSmall-signal gain 22.5 dB (typ.)1dB compressed Pout 23.5 dBm (typ.)Chip size 2.6 mm x 1.2 mm
Parameter Symbol Value Units
Positive DC voltage (+4 V Typical) Vd +6 Volts Negative DC voltage Vg -2 Volts Simultaneous (Vd - Vg) Vdg 8 Volts Positive DC Current I RF Input Power (from 50 Ω source) P Operating Baseplate Temperature T Storage Temperature Range T Thermal Resistance (Channel to Backside) R
D IN
C
stg
jc
607 mA
+8 dBm
-30 to +85 °C
-55 to +125 °C
36.5 °C/W
Electrical
Characteristics
(At 25°C),
Ω system,
50
Vd = +4 V,
Quiescent Current
Idq = 400 mA
Functional
Block Diagram
Parameter Min Typ Max Unit
Frequency Range 21 24 GHz Gate Supply Voltage (Vg) Gain Small Signal at
Pi n= -8 dBm 20 22.5 dB Gain Variation vs. Frequency 1.0 dB Gain at 1dB Compression 21.5 dB Power Output at 1dB
Compression 24 dBm Power Output Saturated:
Pin = +3 dBm 22 25 dBm Drain Current at Pin = -8 dBm 400 mA
RF IN RF OUT
Note:
1. Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 400 mA.
Characteristic performance data and specifications are subject to change without notice.
1
MMIC Chip
-0.3 V
Drain Supply Vd1
Ground (Back of Chip)
Parameter Min Typ Max Unit
Drain Current at 1 dB
Compression 430 mA
Drain Current at Saturated:
Pin = +3 dBm 410 mA
Power Added Efficiency
(PAE): at P1 dB 15 %
Input Return Loss
(Pin = -8 dBm) 14 dB
Output Return Loss
(Pin = -8 dBm) 12 dB OIP3 33 dBm Noise Figure 8 dB
Drain Supply Vd2
Drain Supply Vd3
Gate Supply Vg
Drain Supply Vd4
www.raytheon.com/micro
Revised March 14, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 2
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Recommended
Procedure
for Biasing and
Operation
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material.
CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +4 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq = 400 mA.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
Chip Layout and
Bond Pad
Locations
Chip Layout and Bond
Pad Locations
Chip Size is 2.6 mm x
1.2 mm x 100
Back of chip is RF and
µm.
DC ground
Dimensions in mm
0.0
1.2
0.791
0.637
0.482
0.0
0.0
Characteristic performance data and specifications are subject to change without notice.
0.55
0.82 1.072 1.756 2.076
2.6
1.2
0.685
0.53
0.376
0.0
2.6
www.raytheon.com/micro
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 3
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Application
Schematic Circuit
Diagram
Recommended
Assembly
Diagram
10,000pF
RF IN
Ground
(Back of Chip)
100pF
MMIC Chip
Drain Supply
Vd = +4 V
L
100pF
L
Gate Supply
L
L
L
10,000pF
Vg
1 µF
L
L
100pF
100pF L
L = Bond Wire
Inductance
L
100pF
L
RF OUT
Vd (Positive)
1µF
www.raytheon.com/micro
Die-Attach 80Au/20Sn
100pF
5mil Thick Alumina 50-Ohm
RF
Input
100pF
2 mil Gap
Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 3
Vg (Negative)
100pF
100pF
100pF
5 mil Thick Alumina 50-Ohm
RF Output
L< 0.015” (4 Places)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 4
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Performance
Data
RMWP23001, 23GHz Power Amplifier, Typical Performance,
Vd=4V, Idq=370mA, Chip Bonded into 50ohm Test Fixture
40
30
20
10
0
S21 (dB)
-10
S22
-20
-30
-40 0 10203040
S11
Frequency (GHz)
S21
20
15
10
5
0
-5
-10
-15
-20
S21 S11 S22
S11, S22 (dB)
RMWP23001, 23GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=400mA
25
24
23
Gain (dB)
22
21
20
-15 -10 -5 0 5
Input Power (dBm)
Characteristic performance data and specifications are subject to change without notice.
30
25
20
15
10
5
Output Power (dBm)
Gain @ 21GHz Gain @ 22GHz Gain @ 23GHz Gain @ 24GHz Pout @ 21GHz Pout @ 22GHz Pout @ 23GHz Pout @ 24GHz
www.raytheon.com/micro
Revised March 14, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 5
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Performance
Data
RMWP23001, 23GHz Power Amplifier, Typical Performance,
On-Wafer Measurements, Vd=4V, Idq=400mA and 435mA
26
25
24
23
22
Gain (dB)
21
20
19
18
18 19 20 21 22 23 24 25
Frequency (GHz)
26
25
24
23
22
21
20
19
18
Gain - 400mA Gain - 435mA P1dB - 400mA P1dB - 435mA
Pout at 1dB Compression (dBm)
RMWP23001, Typical Performance variation with Temperature
Vd=4V, Idq=400mA, Chip Bonded into 50ohm Test Fixture
26
25
-25°C
24
+30°C (room)
23
SS Gain (dB)
22
21
20
20 21 22 23 24
+80°C
Frequency (GHz)
+30°C
-25°C +80°C
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 6
Performance
Data
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
RMWP23001, Typical Performance variation with Temperature
Vd=4V, Idq=400mA, Chip Bonded into 50ohm Test Fixture
27
26
-25°C
25
+30°C (room)
24
+80°C
P1dB (dBm)
23
22
21
20 21 22 23 24
Frequency (GHz)
+30°C
-25°C +80°C
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 7
Worldwide Sales Representatives
PRODUCT INFORMATION
North
America
Europe
Asia
D&L Technical Sales
6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. [email protected]
Hi-Peak Technical Sales
P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com
Sangus OY
Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala [email protected]
ITX Corporation
2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp
Spartech South
2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected]
Sangus AB
Berghamnvagen 68 Box 5004 S–165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954
Sea Union
9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su [email protected]
TEQ Sales, Inc.
920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected]
Globes Elektronik & Co.
Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht [email protected]
Cantec Representatives
8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten [email protected]
MTI Engineering Ltd.
Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg [email protected]
Steward Technology
6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward [email protected]
Sirces srl
Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino [email protected]
Worldwide
Distribution
Sales Office
Headquarters
Customer
Support
www.raytheon.com/micro
Headquarters
6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig [email protected]
Belgium and Luxembourg
Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 [email protected]
United States
(East Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
978-684-8900 fax: 978-684-5452 [email protected]
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 7
United Kingdom
Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com
United States
(West Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
France
4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com
Europe
Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Holland
Chr. Huygensweg 17 2400 AJ ALPHEN AAN DEN RIJN The Netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com
Asia
Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com
Spain
C/Isobel Colbrand, 6 – 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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