Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Parameter Symbol Value Unit
RF Input Power (from 50 Ω source) P
IN
+25 dBm
Operating Baseplate Temperature T
C
-30 to +85 °C
Storage Temperature Range T
stg
-55 to +125 °C
The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,
multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWM38001 is a GaAs
MMIC diode mixer utilizing Raytheon’s 0.25µm power PHEMT process. The MMIC can be used as both an
Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
Absolute
Maximum
Ratings
Description
4 mil substrate
Conversion loss 5 dB (Upconverter)
Conversion loss 8 dB (Downconverter)
No DC bias required
Chip size 1.4 mm x 1.4 mm
Features
Notes:
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 5 GHz.
Electrical
Characteristics
(At 25°C),
50
Ω system,
LO = +12 dBm
RMWM38001
38 GHz Mixer MMIC
Parameter Min Typ Max Unit
RF Frequency Range 37 40 GHz
LO Frequency Range 32 - 35 GHz
IF Frequency Range 4.7 - 5.3 GHz
LO Drive Power 12 16 dBm
Up Conversion Loss 5 dB
Down Conversion Loss
1
8 10dB
Conversion Loss Variation
vs Freq 3 dB
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding
to a typically 2 mil between the chip and the substrate material.
Application
Information
Figure 1
Functional Block
Diagram
MMIC Chip
IF IN
RF OUT
Ground
(Back of Chip)
LO IN
Up-Conversion
MMIC Chip
IF OUTRF IN
Ground
(Back of Chip)
LO IN
Down-Conversion
Dimensions in mm
0.0
0.0
0.0
0.0
1.41.4
1.4
1.4
0.7205 0.863
0.163
0.3055
0.164
0.3065
Figure 2
Chip Layout and
Bond Pad Locations
Chip Size is 1.4 mm
x 1.4 mm x 100
µm.
Back of chip is RF
ground
RMWM38001
38 GHz Mixer MMIC
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
LO
Input
RF Input
/Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015”
(6 Places)
Die-Attach
80Au/20Sn
IF Input
/Output
5 mil Thick
Alumina
50-Ohm
Figure 3
Recommended
Assembly Diagram
1
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
The RMWM38001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input
drive level.
Recommended
Procedure for
Operation
Note:
1. Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
RMWM38001
38 GHz Mixer MMIC
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
Performance
Data
RMWM38001 38 GHz Mixer on-Wafer Performance UpConverter.
LO Drive Power = 12 dBm
RMWP38001 38 GHz Mixer Typical On-Wafer Performance DownConverter.
LO Drive Power = 12 dBm
-10
-8
-6
-4
-2
0
37000 37500 38000 38500 39000 39500 40000
RF Output Frequency (GHz)
Conversion Gain (dB)
-10
-8
-6
-4
-2
0
37000 37500 38000 38500 39000 39500 40000
RF Input Frequency (GHz)
Conversion Gain (dB)
RMWM38001
38 GHz Mixer MMIC
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 14, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
PRODUCT INFORMATION
D&L Technical Sales
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362 Lowell Street
Andover, MA 01810
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