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RMTR10300
Datasheet (Raytheon)
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Datasheet RMTR10300 Datasheet (Raytheon)

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Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
2 mil substrateConversion Loss 0 dBm (typ.)Wide operating bandwidthChip size 3.224 mm x 1.134 mm
Features
Electrical
Characteristics
(At 25°C), 50 Ω system,
Vd = +5 V, Quiescent
current (Idq)= 75 mA,
Pin=+17 dBm
Note: 1. Typical range of the negative gate voltage is -0.5 to 0.0V to set typical Idq of 75 mA.
Absolute
Maximum
Ratings
Parameter Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd + 6 Volts Negative DC Voltage Vg - 2 Volts Simultaneous (Vd - Vg) Vdg + 8 Volts Positive DC Current Id 187 mA RF Input Power (from 50 Ω source) P
IN
+22 dBm
Operating Baseplate Temperature T
C
-30 to +85 °C
Storage Temperature Range T
stg
-55 to +125 °C
Thermal Resistance R
jc
117 °C/W
(Channel to Backside)
Parameter Min Typ Max Unit
Input Frequency Range 9 10.75 GHz Output Frequency Range 27 32.25 GHz Gate Supply Voltage (Vg)
1
- 0.2 V Input Drive Power @ Fo +15 +17 dBm Output Power @ 3Fo +17 dBm
Parameter Min Typ Max Unit
Conversion Loss 0 dBm Fundamental Rejection -30 dBc 2nd Harmonic Rejection -15 dBc 4th Harmonic Rejection -25 dBc Input Return Loss 8 dB Output Return Loss 7 dB
RMTR10300
10-30 GHz Tripler MMIC
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding to a typically 2 mil between the chip and the substrate material.
Figure 1
Functional Block
Diagram
Application
Information
MMIC Chip
RF OUT
3Fo
RF IN
Fo
Ground
(Back of Chip)
Gate Supply
(Vg1, Vg2 & Vg3)
Drain Supply
(Vd2)
Drain Supply
(Vd3)
Drain Supply
(Vd1)
RMTR10300
10 – 30 GHz Tripler MMIC
X3
0.0
0.974 1.8830.182
2.369
1.019
2.5292.0251.723
0.113
1.007
0.127
3.042
3.111
1.134
0.777
0.577
0.377
0.115
3.224
Figure 2
Chip Layout and Bond
Pad Locations
Chip Size is 3.224 mm x
1.134 mm. Back of chip
is RF ground.
Dimensions in mm
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RF OUT
3Fo
RF IN
Fo
Ground (Back of Chip)
Gate Supply (Vg)
Drain Supply (Vd = +5 V)
100 pF
10,000 pF
100 pF
10,000 pF
100 pF100 pF
L= Bond Wire Inductance
LL
LLL
L
L
L
L
Figure 3
Recommended
Application Schematic
Circuit Diagram
RMTR10300
10 – 30 GHz Tripler MMIC
X3
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Note: Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Figure 4
Recommended
Assembly Diagram
RF Input
RF Output
5mil Thick Alumina 50-Ohm
5 mil Thick Alumina 50-Ohm
2 mil Gap
L< 0.015” (4 Places)
Die-Attach 80Au/20Sn
100pF
`
100pF
Drain Supply (Vd = +5 V)
10,000pF
Gate Supply (Vg)
RMTR10300
10 – 30 GHz Tripler MMIC
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=75 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power. (ii) Turn down and off drain voltage (Vd). (iii) Turn down and off gate bias voltage (Vg).
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
RMTR10300 Fixtured Data
Vd = 5V Vg = -0.2V Id = 75mA w/o RF
All Gates and Drains Separated on chip (S)
Pin = 15, 17 & 19 dBm
0
5
10
15
20
8 8.5 9 9.5 10 10.5 11 11.5 12
Input Frequency (GHz)
Harmonic Power (dBm)
P3fo_15 dBm P3fo_17 dBm P3fo_19 dBm
RMTR10300 Fixtured Data
Vd = 5V Vg = -0.2V Id = 75mA w/o RF
All Gates and Drains Separated on chip
Pin = 17 dBm
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
8 8.5 9 9.5 10 10.5 11 11.5 12
Input Frequency (GHz)
Harmonic Power (dBm)
Pfo P2fo P3fo P4fo
Performance
Data
RMTR10300
10 – 30 GHz Tripler MMIC
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Frequency (GHz)
RMTR10300 Fixtured Data
Output Return Loss
Vd = 5V Id = 75mA Vg = -0.2V
All Gates & Drains Separated on chip
-30
-25
-20
-15
-10
-5
0
26 27 28 29 30 31 32 33
Return Loss (dB)
S22
RMTR10300 Fixtured Data
Input Return Loss
Vd = 5V Id = 75mA Vg = -0.2V
All Gates & Drains Separated on chip
-30
-25
-20
-15
-10
-5
0
8 9 10 11 12
Frequency (GHz)
Return Loss (dB)
S11
RMTR10300
10 – 30 GHz Tripler MMIC
Performance
Data
Page 7
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised April 6, 2001
Page 7
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Worldwide Sales Representatives
D&L Technical Sales
6139 S. Rural Road, #102 Tempe, AZ 85283 480-730-9553 fax: 480-730-9647 Nicholas Delvecchio, Jr. [email protected]
Hi-Peak Technical Sales
P.O. Box 6067 Amherst, NH 03031 866-230-5453 fax: 603-672-9228 sales@hi–peak.com
North
America
Spartech South
2115 Palm Bay Road, NE, Suite 4 Palm Bay, FL 32904 321-727-8045 fax: 321-727-8086 Jim Morris [email protected]
TEQ Sales, Inc.
920 Davis Road, Suite 304 Elgin, IL 60123 847-742-3767 fax: 847-742-3947 Dennis Culpepper [email protected]
Cantec Representatives
8 Strathearn Ave, No. 18 Brampton, Ontario Canada L6T 4L9 905-791-5922 fax: 905-791-7940 Dave Batten [email protected]
Sangus OY
Lunkintie 21, 90460 Oulunsalo Finland 358-8-8251-100 fax: 358-8-8251-110 Juha Virtala [email protected]
ITX Corporation
2–5, Kasumigaseki 3–Chome Chiyoda–Ku Tokyo 100-6014 Japan 81-3-4288-7073 fax: 81-3-4288-7243 Maekawa Ryosuke maekawa.ryosuke@ itx–corp.co.jp
MTI Engineering Ltd.
Afek Industrial Park Hamelacha 11 New Industrial Area Rosh Hayin 48091 Israel 972-3-902-5555 fax: 972-3-902-5556 Adi Peleg [email protected]
Sirces srl
Via C. Boncompagni, 3B 20139 Milano Italy 3902-57404785 fax: 3902-57409243 Nicola Iacovino [email protected]
Sea Union
9F-1, Building A, No 19-3 San-Chung Road Nankang Software Park Taiwan, ROC Taipei 115 02-2655-3989 fax: 02-2655-3918 Murphy Su [email protected]
Globes Elektronik & Co.
Klarastrabe 12 74072 Heilbronn Germany 49-7131-7810-0 fax: 49-7131-7810-20 Ulrich Blievernicht [email protected]
Headquarters
6321 San Ignacio Drive San Jose, CA 95119 408-360-4073 fax: 408-281-8802 Art Herbig [email protected]
Belgium and Luxembourg
Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 [email protected]
United States
(East Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
Sales Office
Headquarters
978-684-8900 fax: 978-684-5452 [email protected]
Customer
Support
Europe
Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Asia
Raytheon Room 601, Gook Je Ctr. Bldg 191 Hangang Ro 2-GA Yongsan-Gu, Seoul, Korea 140-702 82-2-796-5797 fax: 82-2-796-5790 T.G. Lee tg_lee@ rrfc.raytheon.com
United States
(West Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
United Kingdom
Burnt Ash Road Aylesford, Kent England ME207XB 44 1622882467 fax: 44 1622882469 rfsales.uk@ bfioptilas.avnet.com
France
4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com
Holland
Chr. Huygensweg 17 2400 AJ ALPHEN AAN DEN RIJN The Netherlands 31 172 446060 fax: 33 172 443414 sales.nl@ bfioptilas.avnet.com
Spain
C/Isobel Colbrand, 6 – 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
Europe
Asia
Steward Technology
6990 Village Pkwy #206 Dublin, CA 94568 925-833-7978 fax: 925-560-6522 John Steward [email protected]
Sangus AB
Berghamnvagen 68 Box 5004 S–165 10 Hasselby Sweden Ronny Gustafson 468-0-380210 fax: 468-0-3720954
Worldwide
Distribution
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