Page 1
RMPA27000
27 - 29 GHz 1.8 Watt Power
Description
Features
Absolute
Maximum
Ratings
Amplifier MMIC
ADVANCED INFORMATION
The Raytheon RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio,
point to multi-point communications, LMDS and other millimeter wave applications. The RMPA27000 is a 3-stage
GaAs MMIC amplifier utilizing Raytheon’s advanced 0.15 µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
18 dB small signal gain (typ.)
32.5 dBm saturated power out (typ.)
DC Bias connections on top or bottom side
Circuit contains individual source vias
Chip size 4.00 mm x 2.98 mm
Parameter Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd + 6 Volts
Negative DC Voltage Vg - 2 Volts
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Base plate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
Stg
D
IN
C
jc
2450 mA
+22 dBm
-30 to +85 °C
-55 to +125 °C
5.6 °C/W
(Photo TBS)
Electrical
Characteristics
(At 25°C) 50 Ω
system, Vd=+5 V,
Quiescent current
(Idq) =1500 mA
www.raytheon.com/micro
1
Parameter Min Typ Max Unit
Frequency Range 27 29 GHz
Gate Supply Voltage (Vg)
Gain Small Signal
(Pin=0 dBm) 16 18 dB
Gain Variation vs.
Frequency +/-0.5 dB
Power Output at 1 dB
Compression 32 dBm
Power Output Saturated:
(Pin=+19 dBm) 32 32.5 dBm
Note:
1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 1
1
-0.2 V
Parameter Min Typ Max Unit
Drain Current at Pin=0 dBm 1500 mA
Drain Current at P1 dB
Power Added Efficiency
OIP3 (24 dBm/Tone) 39 dBm
Input Return Loss
Output Return Loss
Compression 1780 mA
(PAE): at P1dB 20 %
(Pin=0 dBm) 6 dB
(Pin=0 dBm) 10 dB
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 2
RMPA27000
27 - 29 GHz 1.8 Watt Power
Application
Information
Figure 1
Functional Block
Diagram of
Packaged Product
Amplifier MMIC
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent
static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Gate Supply
Vg
MMIC Chip
RF IN RF OUT
ADVANCED INFORMATION
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.000 mm x
2.997 mm x 50 um
Typical, Back of Chip is
RF and DC Ground)
Dimensions in mm
Ground
(Back of Chip)
Drain Supply
Vd
2.997
2.812
2.714
1.692
1.492
1.292
0.270
0.172
0.0
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0.0 0.454
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 2
1.422
2.513 4.000
3.891
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 3
RMPA27000
27 - 29 GHz 1.8 Watt Power
Figure 3
Chip Layout and Bond
Pad Locations
(Chip Size=4.000 mm x
2.997 mm x 50 um
Typical, Back of Chip is
RF and DC Ground)
Figure 4
Recommended
Assembly Diagram
Amplifier MMIC
Gate Supply
0.01 µF
100pF
MMIC Chip
RF IN RF OUT
100pF
Ground
(Back of Chip)
0.01 µF 0.01 µF0.01 µF
2 mil Gap
Die-Attach
80Au/20Sn
(-Vg)
Bond Wire Ls
100pF100pF
Drain Supply
(Vd=+5V)
ADVANCED INFORMATION
Bond Wire Ls
5mil Thick
Alumina
50-Ohm
RF
Input
100pF
Vg (Negative)
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side.
Note:Use 0.003” x 0.0005” gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015” long with
stress relief.
Characteristic performance data and specifications are subject to change without notice.
100pF
100pF
100pF
0.01µF0.01µF0.01µF
0.01µF
Vd (Positive)
5 mil Thick
Alumina
50-Ohm
RF
Output
L< 0.015”
(4 Places)
www.raytheon.com/micro
Revised July 27, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 4
RMPA27000
27 - 29 GHz 1.8 Watt Power
Test Procedure
Recommended
Procedure for Biasing
and Operation
Performance
Data
Amplifier MMIC
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence must be followed to properly test the amplifier.
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=1500 mA.
Step 5: After the bias condition is established, the RF
input signal may now be
applied at the appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
ADVANCED INFORMATION
RMPA27000 S21, S11, S22 Mag Vs. Frequency
Bias Vd=5 V, Idq=1500 mA, T=25°C
25
S21
20
15
10
5
0
S21, S11, S22 (dB)
-5
-10
-15
-20
20 22 24 26 28 30 32 34 36
Characteristic performance data and specifications are subject to change without notice.
S22
S11
Frequency (GHz)
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Revised July 27, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 5
RMPA27000
27 - 29 GHz 1.8 Watt Power
Performance
Data
Amplifier MMIC
32.5
32.0
31.5
31.0
P1dB (dBm)
30.5
30.0
ADVANCED INFORMATION
RMPA27000 P1dB Vs. Frequency
Vd=5V Idq=1500mA
26 27 28 29 30 31
Frequency (GHz)
RMPA27000 Power Out Vs. Power In
Vd=5V Idq=1500mA T=25°C
34
32
30
28
26
24
22
20
Pout (dBm)
18
16
14
12
27 GHz
28 GHz
29 GHz
30 GHz
www.raytheon.com/micro
10
0 2 4 6 8 10 12 14 16 18 20
Pin (dBm)
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 6
RMPA27000
27 - 29 GHz 1.8 Watt Power
Performance
Data
Amplifier MMIC
20
19
18
17
16
15
Gain (dB)
14
13
12
11
10
0 2 4 6 8 10 12 14 16 18 20
ADVANCED INFORMATION
RMPA27000 Gain Vs. Power In
Vd=5V Idq=1500mA T=25°C
27 GHz
28 GHz
29 GHz
30 GHz
Pin (dBm)
RMPA27000 Two-Tone OIP3 Vs. Output Power /Tone
Vd=5V Idq=1500mA T=25°C
44
42
40
38
36
34
OIP3L (dBm)
32
30
28
27 GHz
28 GHz
29 GHz
30 GHz
26
10 12 14 16 18 20 22 24 26 28 30
www.raytheon.com/micro
Output Power/Tone (dBm)
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 7
Worldwide Sales
Representatives
ADVANCED INFORMATION
North
America
Europe
Asia
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
dlarizona@aol.com
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
sales@hi–peak.com
Sangus OY
Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
juha.virtala@sangus.fi
ITX Corporation
2–5, Kasumigaseki
3–Chome
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
maekawa.ryosuke@
itx–corp.co.jp
Spartech South
2115 Palm Bay Road, NE,
Suite 4
Palm Bay, FL 32904
321-727-8045
fax: 321-727-8086
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jim@spartech-south.com
Sangus AB
Berghamnvagen 68
Box 5004
S–165 10 Hasselby
Sweden
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468-0-380210
fax: 468-0-3720954
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9F-1, Building A, No 19-3
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Nankang Software Park
Taiwan, ROC
Taipei 115
02-2655-3989
fax: 02-2655-3918
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TEQ Sales, Inc.
920 Davis Road, Suite 304
Elgin, IL 60123
847-742-3767
fax: 847-742-3947
Dennis Culpepper
dculpepper@teqsales.com
Globes Elektronik & Co.
Klarastrabe 12
74072 Heilbronn
Germany
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
hfwelt@globes.de
Cantec Representatives
8 Strathearn Ave, No. 18
Brampton, Ontario
Canada L6T 4L9
905-791-5922
fax: 905-791-7940
Dave Batten
cantec-ott@cantec-o.net
MTI Engineering Ltd.
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
adi_p@mti-group.co.il
Steward Technology
6990 Village Pkwy #206
Dublin, CA 94568
925-833-7978
fax: 925-560-6522
John Steward
johnsteward1@msn.com
Sirces srl
Via C. Boncompagni, 3B
20139 Milano
Italy
3902-57404785
fax: 3902-57409243
Nicola Iacovino
nicola.iacovino@sirces.it
Worldwide
Distribution
Sales Office
Headquarters
Customer
Support
www.raytheon.com/micro
Headquarters
6321 San Ignacio Drive
San Jose, CA 95119
408-360-4073
fax: 408-281-8802
Art Herbig
art.herbig@avnet.com
Belgium and Luxembourg
Cipalstraat
2440 GEEL
Belgium
32 14 570670
fax: 32 14 570679
sales.be@bfioptilas.avnet.com
United States
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet@
rrfc.raytheon.com
978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice.
Revised July 27, 2001
Page 7
United Kingdom
Burnt Ash Road
Aylesford, Kent
England
ME207XB
44 1622882467
fax: 44 1622882469
rfsales.uk@
bfioptilas.avnet.com
United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
France
4 Allee du Cantal
Evry, Cedex
France
33 16079 5900
fax: 33 16079 8903
sales.fr@
bfioptilas.avnet.com
Europe
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
peter_j_hales@
raytheon.com
Holland
Chr. Huygensweg 17
2400 AJ ALPHEN AAN DEN
RIJN
The Netherlands
31 172 446060
fax: 33 172 443414
sales.nl@
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Asia
Raytheon
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
tg_lee@
rrfc.raytheon.com
Spain
C/Isobel Colbrand, 6 – 4a
28050 Madrid
Spain
34 913588611
fax: 34 913589271
sales.es@
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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