Page 1
RMPA19000
18-22 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
Features
Absolute
Maximum
Ratings
The Raytheon RMPA19000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications and other millimeter wave applications. The RMPA19000 is a 3-stage GaAs MMIC
amplifier utilizing Raytheon’s advanced 0.15
µm gate length Power PHEMT process and can be used in conjunction
with other driver or power amplifiers to achieve the required total power output.
28 dB small signal gain (typ.)
29 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 4.45 mm x 3.50 mm
Parameter Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd
Negative DC Voltage Vg
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Base plate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
D
IN
C
Stg
jc
+ 6 Volts
- 2 Volts
1092 mA
+10 dBm
-30 to +85 °C
-55 to +125 °C
16 °C/W
Electrical
Characteristics
(At 25°C) 50 Ω system,
Vd=+5 V, Quiescent
current (Idq)=600 mA
www.raytheon.com/micro
Parameter Min Typ Max Unit
Frequency Range 18 22 GHz
Gate Supply Voltage (Vg)
Gain Small Signal 22 26 dB
at Pin=-5 dBm
Gain Variation vs.
Frequency +/-1 dB
Power Output 28 dBm
at 1 dB Compression
Power Output Saturated: 26 29 dBm
(Pin=+5 dBm)
Drain Current 600 mA
at Pin=-5 dBm
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 600 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 1
1
-0.2 V
Parameter Min Typ Max Unit
Drain Current 660 mA
at P1 dB Compression
Power Added Efficiency 15 %
(PAE): at P1dB
OIP3 37 dBm
Input Return Loss 8 Db
(Pin=-5 dBm)
Output Return Loss 10 dB
(Pin=-5 dBm)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 2
RMPA19000
18-22 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application
Information
Figure 1
Functional
Block Diagram
CAUTION: THIS IS AN ESD SENSITIVE DEVICE
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Drain Supply
(VDA & VDB)
MMIC Chip
RF IN
RF OUT
Figure 2
Chip Layout and Bond
Pad Locations
(Chip Size=4.450 mm
x 3.500 mm x 50 µm.
Back of Chip is RF and
DC Ground)
Ground
(Back of Chip)
Dimensions in mm
3.500
3.126
0.378
0.0
0.0
0.152
Characteristic performance data and specifications are subject to change without notice.
Gate Supply
(VGA & VGB)
3.910
3.324
1.930
1.750
1.570
0.181
0.0
4.450
www.raytheon.com/micro
Revised March 19, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 3
Figure 3
Recommended
Application Schematic
Circuit Diagram
RMPA19000
18-22 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Drain Supply (Vd= +5V)
(Connect to both VDA & VDB)
10000pF
Bond Wire Ls
MMIC Chip
RF IN RF OUT
Ground
(Back of Chip)
100pF
L
L
L
L
10000pF
100pF
Bond Wire Ls
www.raytheon.com/micro
Gate Supply (Vg)
(VGA and/or VGB)
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 4
Figure 4
Recommended
Assembly and
Bonding Diagram
RMPA19000
18-22 GHz Power Amplifier MMIC
2 mil Gap
10000pF
Vg
(Negative)
10000pF
Vd
(Positive)
PRODUCT INFORMATION
Die-Attach
80Au/20Sn
RF
Input
5mil Thick
Alumina
50-Ohm
10000pF
100pF
100pF
100pF
100pF
10000pF
5 mil Thick
Alumina
50-Ohm
RF
Output
L< 0.015”
(4 Places)
www.raytheon.com/micro
Vg
(Negative)
Note:
Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Vd should
biased from 1 supply on both sides as shown. Vg can be biased from either or both sides from 1 supply.
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 4
Vd
(Positive)
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 5
RMPA19000
18-22 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended
Procedure
for Biasing and
Operation
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Slowly apply negative gate
bias supply voltage of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=600 mA.
Note:
An example auto bias sequencing circuit to apply negative gate voltage and positive drain voltage for the above procedure is shown below.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 6
Performance
Data
RMPA19000
18-22 GHz Power Amplifier MMIC
PRODUCT INFORMATION
RMPA19000 Gain, Power Out Vs. Power In
Bias Vd=5 V, Id=600 mA, T=25 °C
RMPA19000 S21, S11, S22 Mag Vs. Freq.
Bias Vd=5 V, Id=600 mA, T=25 °C
RMPA19000 Pout, PAE, Gain Vs. Freq
Bias Vd=5 V, Id=600 mA, T=25 °C
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 7
Worldwide Sales
Representatives
PRODUCT INFORMATION
North
America
Europe
Asia
D&L Technical Sales
6139 S. Rural Road, #102
Tempe, AZ 85283
480-730-9553
fax: 480-730-9647
Nicholas Delvecchio, Jr.
dlarizona@aol.com
Hi-Peak Technical Sales
P.O. Box 6067
Amherst, NH 03031
866-230-5453
fax: 603-672-9228
sales@hi–peak.com
Sangus OY
Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
Juha Virtala
juha.virtala@sangus.fi
ITX Corporation
2–5, Kasumigaseki
3–Chome
Chiyoda–Ku
Tokyo 100-6014 Japan
81-3-4288-7073
fax: 81-3-4288-7243
Maekawa Ryosuke
maekawa.ryosuke@
itx–corp.co.jp
Spartech South
2115 Palm Bay Road, NE,
Suite 4
Palm Bay, FL 32904
321-727-8045
fax: 321-727-8086
Jim Morris
jim@spartech-south.com
Sangus AB
Berghamnvagen 68
Box 5004
S–165 10 Hasselby
Sweden
Ronny Gustafson
468-0-380210
fax: 468-0-3720954
Sea Union
9F-1, Building A, No 19-3
San-Chung Road
Nankang Software Park
Taiwan, ROC
Taipei 115
02-2655-3989
fax: 02-2655-3918
Murphy Su
murphy@seaunionweb.com.tw
TEQ Sales, Inc.
920 Davis Road, Suite 304
Elgin, IL 60123
847-742-3767
fax: 847-742-3947
Dennis Culpepper
dculpepper@teqsales.com
Globes Elektronik & Co.
Klarastrabe 12
74072 Heilbronn
Germany
49-7131-7810-0
fax: 49-7131-7810-20
Ulrich Blievernicht
hfwelt@globes.de
Cantec Representatives
8 Strathearn Ave, No. 18
Brampton, Ontario
Canada L6T 4L9
905-791-5922
fax: 905-791-7940
Dave Batten
cantec-ott@cantec-o.net
MTI Engineering Ltd.
Afek Industrial Park
Hamelacha 11
New Industrial Area
Rosh Hayin 48091
Israel
972-3-902-5555
fax: 972-3-902-5556
Adi Peleg
adi_p@mti-group.co.il
Steward Technology
6990 Village Pkwy #206
Dublin, CA 94568
925-833-7978
fax: 925-560-6522
John Steward
johnsteward1@msn.com
Sirces srl
Via C. Boncompagni, 3B
20139 Milano
Italy
3902-57404785
fax: 3902-57409243
Nicola Iacovino
nicola.iacovino@sirces.it
Worldwide
Distribution
Sales Office
Headquarters
Customer
Support
www.raytheon.com/micro
Headquarters
6321 San Ignacio Drive
San Jose, CA 95119
408-360-4073
fax: 408-281-8802
Art Herbig
art.herbig@avnet.com
Belgium and Luxembourg
Cipalstraat
2440 GEEL
Belgium
32 14 570670
fax: 32 14 570679
sales.be@bfioptilas.avnet.com
United States
(East Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
Walter Shelmet
wshelmet@
rrfc.raytheon.com
978-684-8900 fax: 978-684-5452 customer_support@rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice.
Revised March 19, 2001
Page 7
United Kingdom
Burnt Ash Road
Aylesford, Kent
England
ME207XB
44 1622882467
fax: 44 1622882469
rfsales.uk@
bfioptilas.avnet.com
United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
France
4 Allee du Cantal
Evry, Cedex
France
33 16079 5900
fax: 33 16079 8903
sales.fr@
bfioptilas.avnet.com
Europe
Raytheon
AM Teckenberg 53
40883 Ratingen
Germany
49-2102-706-155
fax: 49-2102-706-156
Peter Hales
peter_j_hales@
raytheon.com
Holland
Chr. Huygensweg 17
2400 AJ ALPHEN AAN DEN
RIJN
The Netherlands
31 172 446060
fax: 33 172 443414
sales.nl@
bfioptilas.avnet.com
Asia
Raytheon
Room 601, Gook Je Ctr. Bldg
191 Hangang Ro 2-GA
Yongsan-Gu, Seoul,
Korea 140-702
82-2-796-5797
fax: 82-2-796-5790
T.G. Lee
tg_lee@
rrfc.raytheon.com
Spain
C/Isobel Colbrand, 6 – 4a
28050 Madrid
Spain
34 913588611
fax: 34 913589271
sales.es@
bfioptilas.avnet.com
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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