Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 1
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Description
Parameter Min Typ Max Unit
Frequency Range 824 849 MHz
Gain (Pout=+28 dBm) 30 dB
Gain AMPS (Pout=+31.5dBm) 30 dB
Analog Output Power 31.5 dBm
Power-Added Efficiency
CDMA (Pout =+28 dBm) 30 35 %
Analog (Pout =+31.5 dBm) 44 50 %
ACPR1
5
-52 -46 dBc
ACPR2
5
-58 -55 dBc
Rx-Band Noise Power
(All Power Levels) -135 dBm/Hz
Single positive-supply operation
High dual-mode (AMPS/CDMA) efficiency
Excellent linearity
Small size: 6.0 x 6.0 x 1.5 mm
3
LCC package
50-ohm matched input and output module
Adjustable quiescent current and power-down mode
Suitable for CDMA and CDMA2000 1X systems
Features
Notes:
1. No permanent damage with only one parameter set at extreme limit and other parameters typical.
2. Typical RF input powers for CDMA (-3 dBm) and AMPS mode (+2 dBm) operation.
3. All parameters to be met at Ta = +25°C, Vcc = +3.5V, Vref=3.0V and load VSWR ≤ 1.2:1.
4. Load VSWR ≤ 6:1 all phase angles.
5. CDMA Waveform measured using the ratio of the average power within the 1.23 MHz signal channel to the power within a
30 kHz resolution bandwidth, Pout=28 dBm. Offset is ± 885 KHz, ± 1.98 MHz.
6. No applied RF signal. Vcc=+3.5V nominal, Vref=+0.2V maximum.
7. Guaranteed by design.
Electrical
Characteristics
3
Parameter Min Typ Max Unit
Noise Figure 3 dB
Input VSWR (50Ω) 1.5:1 2.5:1 --Output VSWR (50Ω) 2.5:1 --Stability (All spurious)
4,7
-60 dBc
Harmonics (Po ≤ 28 dBm)
7
2fo, 3fo, 4fo -30 dBc
Quiescent Current 80 100 mA
Power Shutdown Current
6
210uA
Vcc 3.0 3.5 4.0 Volts
Vref 2.0 3.0 3.2 Volts
Iref 16 mA
The RMPA0951A-102 is a dual mode, small-outline Power Amplifier Module (PAM) for Cellular CDMA personal
communication system applications. The PA is internally-matched to 50 ohms and DC blocked which minimizes the
use of external components and reduces circuit complexity for system designers. High AMPS/CDMA efficiency and
good linearity are achieved using Raytheon RF Components’ InGaP Heterojunction Bipolar Transistor (HBT)
process.
Parameter Symbol Value Vnits
Supply Voltage Vc1, Vc2 6.0 V
Reference Voltage Vref 1.5 to 4.0 V
RF Input Power
2
Pin +7 dBm
Load VSWR VSWR 6:1
Case Operating Temperature Tc -30 to +85 °C
Storage Temperature Tstg -55 to +150 °C
Absolute
Maximum
Ratings
1
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 2
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 2
Functional Block
Diagram
RF IN
(2)
Vref
(3)
INPUT
STAGE
OUTPUT
STAGE
MMIC
PA MODULE
GND (Pin 7)(Package Bias)
RF OUT
(5)
Vcc1
(1)
N/C (6)
Vcc2
(4)
(TOPSIDE VIEW)
Vcc=3.5V (nom)
Vref=3.0V (nom)
824-849 MHz
50 Ohms I/O
COLLECTOR
BIAS 2
INTERSTAGE
MATCH
COLLECTOR
BIAS 1
Figure 1
Package Outline and
Pin Designations
INPUT STAGE
BIAS
OUTPUT STAGE
BIAS
REFERENCE
ADJUST
OUTPUT
MATCHING
NETWORK
INPUT
MATCHING
NETWORK
Dimensions in inches (mm)
Vcc
RF IN
Vref
Vcc2
RF OUT
N/C
GND
1
2
3
4
5
6
7
DescriptionPin #
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 3
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
PCB Specifications:
Material: Rogers RO4003
Dimensions: 2.0”x1.5”x0.032”
Metallization: 1/2 oz Copper Cladding
With device marking oriented right side up, RF IN is on the left and RF OUT is on the right.
Vcc= +3.5V nominal. Vref=+ 3.0V nominal to obtain Iccq= 80 mA. Operation at lower or higher quiescent currents
can be achieved by decreasing or increasing Vref voltage relative to +3.0V.
First ground the PCB (GND terminal) and apply +3.5V to the collector supply terminals (Vcc1, Vcc2). Next apply
+3.0V to the reference supply (Vref terminal). Quiescent collector current with no RF applied will be about 80 mA.
Reference supply current with or without RF applied will be about 15 mA. When turning amplifier off, reverse
power supply sequence.
Apply -20 dBm RF input power at Cellular frequency (824-849 MHz). After making any initial small signal
measurements at this drive level, input power may be increased up to a maximum of +7 dBm for large signal,
analog (AMPS) or digital CDMA measurements. Do not exceed +7 dBm input power.
Figure 3
Evaluation Board
Layout, Schematic,
and Instructions
* Minimum bypass capacitance recommended for best linearity/low-noise performance.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
C1 *
3.3 µF
2
34
5
6
7
1
Vcc1
SMA1
RF IN
SMA2
RF OUT
Vref
N/C
Vcc2
*
(package base)
50 ohm TRL
50 ohm TRL
C2 *
3.3 µF
Raytheon
RMPA0951A-102
PPYYWWZZZ
C3 *
1000 pF
Note: Addition of C3 bypass
capacitor on Vref pin recommended
to minimize Rx band noise.
PCB Schematic
Vcc1
Vref Vcc2
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 4
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Application
Information
Precautions to Avoid Permanent Device Damage:
– Cleanliness: Observe proper handling procedures to ensure clean devices and PCBs. Devices should
remain in their original packaging until component placement to ensure no contamination or damage to RF,
DC & ground contact areas.
– Device Cleaning: Standard board cleaning techniques should not present device problems provided that
the boards are properly dried to remove solvents or water residues.
– Static Sensitivity: Follow ESD precautions to protect against ESD damage:
• A properly grounded static-dissipative surface on which to place devices.
• Static-dissipative floor or mat.
• A properly grounded conductive wrist strap for each person to wear while handling devices.
– General Handling: Handle the package on the top with a vacuum collet or along the edges with a sharp
pair of bent tweezers. Avoiding damaging the RF, DC, & ground contacts on the package bottom. Do not
apply excessive pressure to the top of the lid.
– Device Storage: Devices are supplied in heat-sealed, moisture-barrier bags. In this condition, devices are
protected and require no special storage conditions. Once the sealed bag has been opened, devices should
be stored in a dry nitrogen environment.
Device Usage: Raytheon recommends the following procedures prior to assembly.
• Dry-bake devices at 125
°C for 24 hours minimum. Note: The shipping trays cannot withstand 125°C
baking temperature.
• Assemble the dry-baked devices within 7 days of removal from the oven.
• During the 7-day period, the devices must be stored in an environment of less than 60% relative
humidity and a maximum temperature of 30
°C
• If the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure
must be repeated.
Solder Materials & Temperature Profile: Reflow soldering is the preferred method of SMT attachment. Hand
soldering is not recommended.
– Reflow Profile
• Ramp-up: During this stage the solvents are evaporated from the solder paste. Care should be taken to
prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. A
typical heating rate is 1- 2°C/sec.
• Pre-heat/soak: The soak temperature stage serves two purposes; the flux is activated and the board
and devices achieve a uniform temperature. The recommended soak condition is: 120-150 seconds at
150°C.
• Reflow Zone: If the temperature is too high, then devices may be damaged by mechanical stress due to
thermal mismatch or there may be problems due to excessive solder oxidation. Excessive time at
temperature can enhance the formation of inter-metallic compounds at the lead/board interface and
may lead to early mechanical failure of the joint. Reflow must occur prior to the flux being completely
driven off. The duration of peak reflow temperature should not exceed 10 seconds. Maximum soldering
temperatures should be in the range 215-220°C, with a maximum limit of 225°C.
• Cooling Zone: Steep thermal gradients may give rise to excessive thermal shock. However, rapid
cooling promotes a finer grain structure and a more crack-resistant solder joint. Figure 1 indicates the
recommended soldering profile.
Solder Joint Characteristics: Proper operation of this device depends on a reliable void-free attachment of the
heatsink to the PWB. The solder joint should be 95% void-free and be a consistent thickness.
Rework Considerations: Rework of a device attached to a board is limited to reflow of the solder with a heat
gun. The device should not be subjected to more than 225°C and reflow solder in the molten state for more than
5 seconds. No more than 2 rework operations should be performed.
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 5
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
25.00
26.00
27.00
28.00
29.00
30.00
31.00
32.00
33.00
34.00
35.00
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
Out put Power ( dBm )
Gain (dB)
824 MHz ( +2 5C)
836.5 M Hz (+25C)
849 MHz ( +2 5C)
824 MHz ( +8 5C)
836.5 M Hz (+85C)
849 MHz ( +8 5C)
824 MHz ( - 30C)
836.5 M Hz (-30C)
849 MHz ( - 30C)
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 4
Recommended Solder
Reflow Profile
Soak at
150
o
C for
60 Sec
45 Sec
(Max)
above
183
o
C
1
o
C/Sec
183
o
C
10 Sec
1oC/Sec
0
20
40
60
80
100
120
140
160
180
200
220
240
0 60 120 180 240 300
Time (Sec)
Deg C
Performance
Data
Measured performance for typical production amplifiers is represented in the figures below. Key characteristics
such as gain, efficiency, output power and linearity are shown for both AMPS and CDMA operation.
Figure 5
RMPA0951A-102 CDMA Gain vs Pout, Frequency and Temperature
+25°C, -30°C
+85°C
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 6
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 6
400.0
420.0
440.0
460.0
480.0
500.0
520.0
540.0
560.0
580.0
600.0
824.0 826.5 829.0 831.5 834.0 836.5 839.0 841.5 844.0 846.5 849.0
Frequency (MHz)
Icc + Iref (mA)
-30C
+25C
+85C
RMPA0951A-102 Vcc = 3.5V, Vref = 3.0V, Pout = 28dBm, CDMA Modulation
Total Current vs Freq and Temp
RMPA0951A-102 PAE vs. Output Power
(Vcc=3.5V, f=836.5MHz, Tc=25°C)
Note: 31.5dBm is single-tone CW
Figure 7
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0 32.0
Output Power (dBm)
PAE (%)
2.0Vref
2.1Vref
2.2Vref
2.3Vref
2.4Vref
2.5Vref
2.6Vref
2.7Vref
2.8Vref
2.9Vref
3.0Vref
Page 7
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 7
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
25.0
26.0
27.0
28.0
29.0
30.0
31.0
32.0
33.0
34.0
35.0
824.0 826.5 829.0 831.5 834.0 836.5 839.0 841.5 844.0 846.5 849.0
Frequency (MHz)
Gain (dB)
-30C
+25C
+85C
RMPA0951A-102 AMPS Mode Gain vs Temperature/Frequency
(Pout = 31.5dBm CW)
Figure 8
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 9
0
100
200
300
400
500
600
700
800
900
2.42.52.62.72.82.93.03.1
Vref (V)
Icc
(
mA
)
P-out=+4dBm
P-out=+16dBm
P-out=+24dBm
P-out=+28dBm
P-out=+31.5dBm
RMPA0951A-102 Icc vs. Vref and Pout
(Vcc=3.5V, f=836.5MHz, Tc=25°C)
Note: 31.5dBm is single-tone CW
Page 8
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 8
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
700.0
720.0
740.0
760.0
780.0
800.0
820.0
840.0
860.0
880.0
900.0
824.0 826.5 829.0 831.5 834.0 836.5 839.0 841.5 844.0 846.5 849.0
Frequency (MHz)
Icc + Iref (mA)
-30C
+25C
+85C
RMPA0951A-102 Vcc = 3.5V, Vref = 3.0V, Pout = 31.5dBm CW
Total Current vs Freq and Temp
Figure 10
Figure 11
-80.00
-75.00
-70.00
-65.00
-60.00
-55.00
-50.00
-45.00
-40.00
4.0 8.0 12.0 16.0 20.0 24.0 28.0
Pout (dBm)
ACP1/ACPR2 (dBc) -Offset: +/- 885 kHz and +/- 1.98 MHz
824 MHz ACPR1
824 MHz ACPR2
836.5 M Hz ACPR1
836.5 M Hz ACPR2
849 MHz ACPR1
849 MHz ACPR2
RMPA0951A-102 Adjacent Channel Power Ratio vs Output Power
(Vcc=3.5V, Vref=3.0V, Ta=+25°C)
Page 9
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 9
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
-65.00
-63.00
-61.00
-59.00
-57.00
-55.00
-53.00
-51.00
-49.00
-47.00
-45.00
824.0 826.5 829.0 831.5 834.0 836.5 839.0 841.5 844.0 846.5 849.0
Frequency (MHz)
ACPR1, 2 (dBc)
ACPR1 -30C
ACPR1 +25C
ACPR1 +85C
ACPR2 -30C
ACPR2 +25
ACPR2 +85C
ACPR1
ACPR2
RMPA0951A-102
Vcc = 3.5V, Vref = 3.0V Pout = 28dBm,
CDMA Modulation ACPR1 @ 885kHz,
ACPR2 @ 1.98MHz vs Frequency and Temperature
Figure 12
Page 10
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 10
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
Many Cellular/PCS handsets can benefit from gain control and DC power management to optimize transmitter
performance while operating at backed-off output power levels. Oftentimes, cellular systems will operate at 10-20
dB back-off from maximum-rated linear power and peak power-added efficiency. The ability to reduce current
consumption under these conditions, without sacrificing linearity, is critical to extending battery life in nextgeneration mobile phones.
The RMPA0951A-102 PA offers the ability to lower quiescent current by more than 60 percent and small-signal
gain by 10-12 dB using a single control voltage (Vref). Even with the amplifier biased for lowest current
consumption, high linearity is maintained over the full operating temperature range and at output power levels up
to +16 dBm. Bias and gain control through Vref provides complete flexibility for the handset designer, allowing the
user to define the operation by either an analog (continuously-variable) or digital (discrete-step) voltage input. As
an example, reducing the Vref voltage from 3.0V (nominal) to 2.2V can lower PA current consumption by more
than 20 percent at an output power of +12 dBm.
The following charts demonstrate analog and digital control techniques for minimizing DC power consumption at
reduced RF output power levels. Figures 14 through 17 characterize analog control over a reference voltage (Vref)
range of 1.8V to 3.0V. Using analog bias control, quiescent current is reduced to less than 30 mA and small-signal
gain is reduced by 12 dB at Vref=1.8V. Operating current at +12 dBm is also reduced by 20 percent (25 mA) at
Vref=2.2V and by more than 50 percent (50 mA) at the lowest reference voltage (Vref=1.8V) compared with fixedbias operation at Vref=3.0V. In all cases, DC current savings is achieved while fully complying with
IS-95 linearity requirements.
Figures 18 through 22 feature digital control performance using three discrete voltage levels (3.0V, 2.2V, 1.8V) to
optimize linear PA performance over three output power ranges (< +4 dBm, +4 dBm to +16 dBm, >+16 dBm).
Alternate output power ranges can be selected depending on the power-probability use in the cellular system.
DC Power
Management
for Reduced-Power
Operating Modes
Parameter Min Typical Max Units Conditions
Low-Power Range +8 dBm Vref=1.8 V typ.
Current 50 mA
Gain 24 dB
Linearity -50 dBc
Mid-Power Range +8 +12 +16 dBm Vref=2.2 V typ.
Current 120 mA
Gain 28.5 dB
Linearity -50 dBc
High-Power Range +16 +28 dBm Vref=3.0 V typ.
Current 540 mA Pout=+28 dBm
Gain 32.5 dB
Linearity -38 dBc
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 13
Cellular PAM-Digital
Control Mode
Page 11
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 11
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
Total Quiescent Current (Icc + Iref) vs. Reference Voltage (Vcc=3.5, Tc =+25°C)
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
80.0
90.0
2.02.12.22.32.42.52.62.72.82.93.0
Vref (V)
Total Quiescent Current (mA)
Nominal Iccq
Figure 14
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
2.02.12.22.32.42.52.62.72.82.93.0
Vref (V)
PAE (%)
Nominal PAE
RMPA0951A-102
PAE vs. Vref at Pout=+16dBm (Vcc=3.5V, f=836.5MHz, Tc=25°C)
Figure 15
Page 12
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 12
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
20.0
22.0
24.0
26.0
28.0
30.0
32.0
2.02.12.22.32.42.52.62.72.82.93.0
Vref ( V)
Small-Signal Gain (dB
)
RMPA0951A-102 Small-Signal Gain vs. Reference Voltage
(Vcc=3.5V, f=836.5MHz, Pout=0 dBm, Tc=25°C)
Nominal Gain
Figure 16
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
Figure 17
30.0
40.0
50.0
60.0
70.0
80.0
90.0
100.0
110.0
120.0
130.0
140.0
150.0
160.0
170.0
0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
Output Power (dBm)
Total Current (mA)
3.0Vref
2.9Vref
2.8Vref
2.7Vref
2.6Vref
2.5Vref
2.4Vref
2.3Vref
2.2Vref
2.1Vref
2.0Vref
RMPA0951A-102 Total Current (Icc + Iref) vs. Output Power and Vref
(Vcc=3.5V, f=836.5 MHz, Tc=25°C)
Page 13
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 13
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
0.0
100.0
200.0
300.0
400.0
500.0
600.0
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
Pout ( dBm)
Icc + Iref (mA)
-30C Vref 1.8V
+25C Vref 1.8 V
+85C Vref 1.8 V
-30C Vref 2.2V
+25C Vref 2.2 V
+85C Vref 2.2 V
-30C Vref 3.0V
+25C Vref 3.0 V
+85C Vref 3.0 V
Low-
Power
Mid-Power High-Power
Vref=3.0V
Vref=2.2V
Vref=1.8V
RMPA0951A-102 Total Current (Icc + Iref) vs Reference Voltage and Temperature
(Vcc=3.5V, f=836.5MHz, Pout=0 dBm)
Figure 18
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
RMPA0951A-102 Freq = 836.5 MHz, Vcc = 3.5V
Total Current (Icc + Iref) vs Pout and Temp (Digital Control)
Figure 19
0.0
40.0
80.0
120.0
160.0
200.0
0.0 4.0 8.0 12.0 16.0
Pout ( dB m )
Icc + Iref (mA)
-30C Vref 1.8V
+25C Vref 1.8V
+85C Vref 1.8V
-30C Vref 2.2V
+25C Vref 2.2V
+85C Vref 2.2V
-30C Vref 3.0V
+25C Vref 3.0V
+85C Vref 3.0V
Low-
Power
Mid-Power
Vref=3.0V
Vref=2.2V
Vref=1.8V
Page 14
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 14
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
10.0
15.0
20.0
25.0
30.0
35.0
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
Pout (dBm)
Gain (dB)
-30C Vref 1.8V
+25C Vref 1.8V
+85C Vref 1.8V
-30C Vref 2.2V
+25C Vref 2.2V
+85C Vref 2.2V
-30C Vref 3.0V
+25C Vref 3.0V
+85C Vref 3.0V
Low-
Power
Mid-Power High-Power
Vref=3.0V
Vref=2.2V
Vref=1.8V
RMPA0951A-102
Freq = 836.5 MHz, Vcc = 3.5V Gain vs Pout and Temp (Digital Control)
Figure 20
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
RMPA0951A-102
Freq = 836.5 MHz, Vcc = 3.5V ACPR1 vs Pout and Temp (Digital Control)
Figure 21
-70.00
-65.00
-60.00
-55.00
-50.00
-45.00
-40.00
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
Pout (dBm)
ACPR1 (dBc)
-30C Vref 1.8V
+25C Vref 1.8V
+85C Vref 1.8V
-30C Vref 2.2V
+25C Vref 2.2V
+85C Vref 2.2V
-30C Vref 3.0V
+25C Vref 3.0V
+85C Vref 3.0V
Vref=3.0V
Vref=2.2V
Vref=1.8V
Low
Power
Mid Power High Power
Page 15
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised March 29, 2002
Page 15
www.raytheonrf.com
PRODUCT INFORMATION
Characteristic performance data and specifications are subject to change without notice.
RMPA0951A-102
Freq = 836.5 MHz, Vcc = 3.5V ACPR2 vs Pout and Temp (Digital Control)
Figure 22
RMPA0951A-102
3V Cellular CDMA Power Amplifier Module
-80.00
-75.00
-70.00
-65.00
-60.00
-55.00
-50.00
0.0 4.0 8.0 12.0 16.0 20.0 24.0 28.0
Pout (dBm)
ACPR2 (d Bc )
-30C Vre f 1.8V
+25C Vref 1.8V
+85C Vref 1.8V
-30C Vre f 2.2V
+25C Vref 2.2V
+85C Vref 2.2V
-30C Vre f 3.0V
+25C Vref 3.0V
+85C Vref 3.0V
Vref=3.0V
Vref=2.2V
Vref=1.8V
Low
Power
Mid Power High Power
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