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RMLA00400
Datasheet (Raytheon)
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Datasheet RMLA00400 Datasheet (Raytheon)

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Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
MHEMTHigh bandwidth: 40 GHzLow group delayLow power dissipation: ~450mW.Single ended outputDC coupledEffective wideband gain stageChip size 3.71 mm x 1.70 mm
Features
The Raytheon RMLA00400 is a very high speed Transimpedance Amplifier (TIA) MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon’s advanced MHEMT process. The TIA is used in conjunction with a photodetector to convert optical signals into a voltage output, or as a general purpose low noise wideband gain stage.
RMLA00400
40 Gb/s Transimpedance Amplifier
Electrical
Characteristics
2,3
Parameter Min Typ Max Unit
Frequency Bandwidth (1 dB) 40 GHz Frequency Bandwidth (3 dB) 45 GHz Low frequency Cut-off 30 KHz Gain 16 dB Gain Flatness ±0.75 dB Transimpedance 300 Ohms Group Delay 30 pS p-p Noise Figure 2.5 dB
Parameter Min Typ Max Unit
Output Voltage 400 mV p-p Output Return Loss 15 dB Quiescent Current 130 mA
Input Noise Current Density 25 pA/ √Hz
Vd 3.5 V Vg
1 -3.5 V
Vg
2 2.5 V
Case Operating Temp -40 +85 °C
Notes:
1. No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.
2. All parameters met at Tc = 25°C, Vd = 3.5V.
3. Measured in a 50 ohm system.
Absolute
Maximum
Ratings
1
Parameter Symbol Value Unit
Supply Voltage Vd +3.5 V RF Input Power Pin -10 dBm
Case Operating Temperature Tc -40 to +85 °C Storage Temperature Tstg -40 to +100 °C
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
RMLA00400
40 Gb/s Transimpedance Amplifier
Figure 1
Functional Block
Diagram
Vg1 Vg2
Vd
RFin
RFout
Figure 2
Recommended
Application Schematic
Circuit Diagram
Vg1
Vd=Vg2=+3.5 V
RFin
RFout
100 pF
10,000 pF
L
Photodetector
Vb
R=125 Ω
Vg2
Vd
L= Bond Wire
L
100 pF
10,000 pF
Figure 3
Chip Layout and
Bond Pad Locations
(Chip Size=3.710
mm x 1.700 mm x
100 µm Typical,
Back of Chip is RF
and DC Ground)
Dimensions in mm
0.0 0.887 1.219 3.710
3.602
0.0
0.147
0.981
1.137
1.288
2.702
0.301
0.0
0.454
1.264
1.545
1.700
0.607
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
RMLA00400
40 Gb/s Transimpedance Amplifier
Vd, Vg2 (Positive)
Vg1 (Negative)
RF Input
RF Output
5 mil Thick Alumina 50-Ohm
L< 0.015”
100pF
10000pF
C
Photodetector
Vb
~ 0.1mF
125Ω
100pF
10000pF
Figure 4
Recommended
Assembly Diagram
CAUTION: LOSS OF GATE VOLTAGE (Vg1) WHILE DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier.
Recommended
Procedure
for Biasing and
Operation
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the grounds
of the chip carrier. Apply negative gate 1 bias supply voltage of -5.0 V to Vg1.
Step 3: Apply positive bias supply voltage of +3.5 V to
Vd, Vg2 connection.
Step 4: Adjust gate 1 bias voltage Vg1 to set the
quiescent current of Idq ~ 130 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the appropriate frequency band. Adjust Vg1 for best gain flatness.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd, Vg2), (iii) Turn down and off gate bias voltage (Vg1).
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 4
Characteristic performance data and specifications are subject to change without notice.
RMLA00400
40 Gb/s Transimpedance Amplifier
Performance
Data
0
5
10
15
20
01020304050
Typical Measured Gain Response
Frequency (GHz)
|S21| (dB)
Measured in a 50 ohm system
Gain & Noise Figure Vs. Frequency
Fixtured Measurement
0
5
10
15
20
0
2.5
5
7.5
10
0 5 10 15 20 25 30 35 40
Gain (dB)
NF (dB)
Frequency (GHz)
NF
Gain
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 5
Characteristic performance data and specifications are subject to change without notice.
RMLA00400
40 Gb/s Transimpedance Amplifier
Performance
Data
Power & Gain Vs. Frequency
with Input Power as a Parameter
-15
-10
-5
0
5
10
-5
0
5
10
15
20
0 5 10 15 20 25 30 35 40
Frequency (GHz)
Pout (dBm)
Gain (dB)
Gain
Measured in a 50 ohm test system
Gain & Return Loss Vs. Frequency
Fixtured Measurement
Frequency (GHz)
0
5
10
15
20
-20
-15
-10
-5
0
0.01 0.1 1 10 100
Gain (dB)
|S11| and |S22| (dB)
Gain
Measured in a 50 ohm test system
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 6
Characteristic performance data and specifications are subject to change without notice.
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Belgium and Luxembourg
BFI Optilas Cipalstraat 2440 GEEL Belgium 32 14 570670 fax: 32 14 570679 sales.be@bfioptilas.avnet.com
United States
(East Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
Sales Office
Headquarters
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Customer
Support
Europe
Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
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(West Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8919 fax: 978-684-8646 Rob Sinclair robert_w_sinclair@ rrfc.raytheon.com
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BFI Optilas 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com
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BFI Optilas C/Isobel Colbrand, 6 – 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
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