Page 1
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Description
Features
Absolute
Maximum
Ratings
Electrical
Characteristics
(At 25°C)
Ω system, Vd=+5 V,
50
Quiescent current
(Idq)=250 mA
The Raytheon RMDA25000 is a high efficiency driver amplifier designed for use in point to point radio, point to
multi-point communications, LMDS and other millimeter wave applications. The RMDA25000 is a 3-stage GaAs
MMIC amplifier utilizing Raytheon’s advanced 0.15
µm gate length Power PHEMT process and can be used in
conjunction with other driver or power amplifiers to achieve the required total power output.
32 dB small signal gain (typ.)
21 dBm saturated power out (typ.)
Circuit contains individual source Vias
Chip Size 2.79 mm x 1.63 mm
Parameter Symbol Value Unit
Positive DC Voltage (+5 V Typical) Vd + 6 Volts
Negative DC Voltage Vg - 2 Volts
Simultaneous (Vd - Vg) Vdg + 8 Volts
Positive DC Current I
RF Input Power (from 50 Ω source) P
Operating Base plate Temperature T
Storage Temperature Range T
Thermal Resistance R
(Channel to Backside)
Parameter Min Typ Max Unit
Frequency Range 23 28 GHz
Gate Supply Voltage
Gain Small Signal 27 32 36 dB
Gain Variation vs.
Frequency +/-2 dB
Power Output at 1 dB
Compression 22 dBm
Power Output Saturated:
(Pin=-5 dBm) 23 dBm
1
(Vg) -0.4 V
Stg
D
IN
C
jc
Parameter Min Typ Max Unit
Drain Current at
Drain Current at
Power Added Efficiency
OIP3 29 dBm
Input Return Loss 3 10 dB
Output Return Loss 7 8 dB
360 mA
+10 dBm
-30 to +85 °C
-55 to +125 °C
44 °C/W
Pin=-5 dBm 250 mA
P1 dB Compression 270 mA
(PAE): at P1dB 10 %
Application
Information
www.raytheon.com/micro
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.
Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen
environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC
Ground.
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including
the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to
prevent static discharges through the device.
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long
corresponding to a typically 2 mils gap between the chip and the substrate material.
Note:
1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 250 mA.
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 2
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Figure 1
Functional Block
Diagram
Figure 2
Chip Layout and Bond Pad
locations.
Chip size is 2.79 mm x
1.63 mm x 50
µm. Back of
chip is RF and DC ground.
Figure 3
Recommended
Application Schematic
Circuit Diagram
Dimensions in mm
0.0
Bond Wire Ls
Drain Supply Vd
MMIC Chip
RF IN RF OUT
Gate Supply VgGround (Back of Chip)
0.0
0.115
0.115
10000pF
100pF
1.303
Drain Supply
(Vd= +5 V)
100pF
1.895
100pF
2.614
2.614
1.629
1.452
1.028
0.843
0.658
0.177
2.794
www.raytheon.com/micro
MMIC Chip
RF IN RF OUT
Ground
(Back of Chip)
100pF
10000pF
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 2
100pF100pF
Gate Supply
(Vg)
Bond Wire Ls
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 3
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Figure 4
Recommended
Assembly Diagram
Recommended
Procedure for
Biasing and
Operation
Die-Attach
2 mil Gap
Alumina
50-Ohm
RF
Input
Note:
Use 0.003” x 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief. Vd should
biased from 1 supply as shown. Vg should be biased from 1 supply.
CAUTION: LOSS OF GATE VOLTAGE (VG) WHILE DRAIN VOLTAGE (VD) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground of
the chip carrier.
Slowly apply negative gate bias supply voltage
of -1.5 V to Vg.
Step 3: Slowly apply positive drain bias supply voltage
of +5 V to Vd.
Step 4: Adjust gate bias voltage to set the quiescent
current of Idq=250 mA.
80Au/20Sn
100pF
10000pF
100pF
100pF
100pF
Vg (Negative)
Vd (Positive)
10000pF
100pF
100pF
Step 5: After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power.
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate bias voltage (Vg).
An example auto bias sequencing circuit to apply
negative gate voltage and positive drain voltage for the
above procedure is shown below.
Alumina
50-Ohm
RF
Output
L< 0.015”
(4 Places)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 4
Performance
Data
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
RMDA25000 Power Out Vs. Power In
Frequency = 26 GHz, Bias Vd=5 V, Id=250 mA, T=25 °C
25
20
15
10
Pout (dBm)
5
S21 Mag (dB)
0
-25 -20 -15 -10 -5 0 5
Input Power Drive (dBm)
RMDA25000 S21 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 °C
36
34
32
30
28
www.raytheon.com/micro
26
21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 5
RMDA25000
23-28 GHz Driver Amplifier MMIC
ADVANCED INFORMATION
Performance
Data
RMDA25000 S11 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 °C
0
-5
-10
-15
S11 Mag (dB)
-20
-25
21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
S22 Mag (dB)
RMDA25000 S22 Vs. Frequency
Bias Vd=5 V, Id=250 mA, T=25 °C
0
-5
-10
-15
-20
-25
21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Page 6
Worldwide Sales
Representatives
ADVANCED INFORMATION
North
America
Europe
Asia
D&L Technical Sales
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480-730-9553
fax: 480-730-9647
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[email protected]
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P.O. Box 6067
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866-230-5453
fax: 603-672-9228
sales@hi–peak.com
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Lunkintie 21,
90460 Oulunsalo
Finland
358-8-8251-100
fax: 358-8-8251-110
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[email protected]
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Tokyo 100-6014 Japan
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fax: 81-3-4288-7243
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Worldwide
Distribution
Sales Office
Headquarters
Customer
Support
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Headquarters
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408-360-4073
fax: 408-281-8802
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Belgium
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United States
(East Coast)
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362 Lowell Street
Andover, MA 01810
978-684-8628
fax: 978-684-8646
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wshelmet@
rrfc.raytheon.com
Characteristic performance data and specifications are subject to change without notice.
Revised April 16, 2001
Page 6
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England
ME207XB
44 1622882467
fax: 44 1622882469
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United States
(West Coast)
Raytheon
362 Lowell Street
Andover, MA 01810
978-684-8919
fax: 978-684-8646
Rob Sinclair
robert_w_sinclair@
rrfc.raytheon.com
France
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Evry, Cedex
France
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40883 Ratingen
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RIJN
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Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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