Datasheet RMDA00400 Datasheet (Raytheon)

Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 21, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Features
Notes:
1. Off-chip decoupling and blocking capacitors required.
2. All parameters met at T = 25°C, Vd = 8.0V, IDQ= 130mA. Measured in 50 ohm system
Absolute
Maximum
Ratings
DC-43 GHz bandwidthHigh gain: 10 dB typLow group delayLow gain ripple.Psat = 19dBm typLow power dissipation~ 1.4WChip size 3.84 mm x 1.28 mm
Electrical
Characteristics1,2
The Raytheon RMDA00400 is a medium power broadband amplifier MMIC suitable as a driver for external optical modulators for OC-768 fiber optic systems. It is available in die form, and is manufactured using Raytheon’s advanced 0.15µm pHEMT process.
Applications include Long haul, Medium haul and Metro fiber systems
Parameter Symbol Min Typical Max Units
Supply Voltage Vd +8.0 V RF Input Power Pin 18 dBm
Case Operating Temperature Tc -40 +85 °C Storage Temperature Tstg -40 +100 °C
Parameter Min Typ Max Unit
3 dB Bandwidth
(small signal) 43 GHz Gain 10 dB Output Power (saturated) 19 dBm Group Delay ±20 pS
Parameter Min Typ Max Unit
Input Return Loss 15 dB Output Return Loss 10 dB Quiescent Current 130 mA Vd 8.0 V Vg1 -0.3 V
RMDA00400
OC-768 Modulator Driver MMIC
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 21, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Performance
Data
RMDA00400
OC-768 Modulator Driver MMIC
Small Signal Frequency Response
Vd= 8.0V, Idq= 130mA
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30 35 40 45 50
Frequency (GHz)
(dB)
S11 dB S21 dB S22 dB
Pin VS Pout at 30 GHz,
Vd=8.0V, Idq=130mA
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
-9-8-7-6-5-4-3-2-1012345678910111213
Pin (dBm)
Pout (dBm)
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 21, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Chip Layout
and Bond Pad
Locations
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
RF In RF Out
10,000 pF
Vd (+ve)
10,000 pF
100 pF
Vg1
(-ve)
100 pF 10,000 pF10,000 pF
Piconics
spiral
inductors
VG1
VGAUX
VG2
VDAUX
VD1
VD2
Recommended
Application
Schematic Circuit
Diagram
Dimensions in mm
RMDA00400
OC-768 Modulator Driver MMIC
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 21, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Recommended
Procedure
for Biasing and
Operation
Recommended
Assembly Diagram
RF Input
RF Output
5mil Thick Alumina 50-Ohm
5 mil Thick Alumina 50-Ohm
2 mil Gap
L< 0.015” (2 Places)
Die-Attach 80Au/20Sn
10,000pF
Piconics Spiral Inductors
Vd (+8V)
10,000pF
100pF
Vg1
(-ve)
100pF
10,000pF
10,000pF
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. LOSS OF GATE VOLTAGE (VG1) WHILE DRAIN VOLTAGE (VD) IS
PRESENT MAY DAMAGE THE AMPLIFIER CHIP.
The following sequence of steps must be followed to properly test the amplifier:
Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Apply negative gate bias supply voltage of
–1.0 V to Vg1.
Step 3: Apply positive drain bias supply voltage of
+8.0 V to Vd, and monitor drain current Id.
Step 4: Adjust gate bias voltage Vg1 to set the
quiescent current of Idq ~ 130 mA.
Step 5: After the bias condition is established, the RF
input signal may now be applied at the appropriate frequency band. Adjust Vg1 for best gain flatness.
Note: When the device is under RF operation, the supply current Id will increase depending upon output power required.
Step 6: Follow turn-off sequence of:
(i) Turn off RF input power. (ii) Turn down and off drain voltage (Vd). (iv) Turn down and off gate bias voltage (Vg1).
RMDA00400
OC-768 Modulator Driver MMIC
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised November 21, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
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United States
(East Coast)
Raytheon 362 Lowell Street Andover, MA 01810 978-684-8628 fax: 978-684-8646 Walter Shelmet wshelmet@ rrfc.raytheon.com
Sales Office
Headquarters
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Customer
Support
Europe
Raytheon AM Teckenberg 53 40883 Ratingen Germany 49-2102-706-155 fax: 49-2102-706-156 Peter Hales peter_j_hales@ raytheon.com
Asia
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(West Coast)
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BFI Optilas 4 Allee du Cantal Evry, Cedex France 33 16079 5900 fax: 33 16079 8903 sales.fr@ bfioptilas.avnet.com
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BFI Optilas C/Isobel Colbrand, 6 – 4a 28050 Madrid Spain 34 913588611 fax: 34 913589271 sales.es@ bfioptilas.avnet.com
Europe
Asia
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Worldwide
Distribution
Worldwide Sales Representatives
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