Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 1
Characteristic performance data and specifications are subject to change without notice.
Description
DC-20 GHz saturated power bandwidth
High gain: 11dB typ
Low group delay
Low gain ripple.
Psat = 23 dBm typ
Low power dissipation
Chip size 3.84 mm x 1.68 mm
Features
The Raytheon RMDA00100 is a medium power broadband amplifier MMIC suitable as a driver for external optical
modulators for OC-192 fiber optic systems. It is available in die form, and is manufactured using Raytheon’s
advanced 0.15µm pHEMT process. Applications include Long haul, Medium haul and Metro fiber systems.
RMDA00100
OC-192 Modulator Driver MMIC
Electrical
Characteristics
2,3
Parameter Min Typ Max Unit
Saturated Power Bandwidth 20 GHz
3 dB Bandwidth (small signal) 20 GHz
Gain 11 dB
Output Power (saturated) 23 dBm
Group Delay ±20 pS
Notes:
1. Off-chip decoupling and blocking capacitors required.
2. All parameters met at Tc = 25°C, Vd = 8.0V, Idq= 100mA.
3. Measured in a 50 ohm system.
Absolute
Maximum
Ratings
1
Parameter Min Typ Max Unit
Input Return Loss 15 dB
Output Return Loss 10 dB
Quiescent Current 100 mA
Vd 8.0 V
Vg1 -0.3 V
Parameter Symbol Value Unit
Supply Voltage Vd +8.0 V
RF Input Power Pin 18 dBm
Case Operating Temperature Tc -40 to +85 °C
Storage Temperature Tstg -40 to +100 °C
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 2
Characteristic performance data and specifications are subject to change without notice.
RMDA00100
OC-192 Modulator Driver MMIC
Figure 1
Recommended
Application Schematic
Circuit Diagram
Figure 2
Chip Layout and Bond
Pad Locations
RF In RF Out
10,000 pF
Vd
(+ve)
10,000 pF
100 pF
Vg1
(-ve)
100 pF 10,000 pF10,000 pF
Piconics
spiral
inductors
VG1
VGAUX
VG2
VDAUX
VD1
VD2
Vdaux
Vd1
Vd2
Vd3
GND
RF OUT
Vg2
Vgaux
Vg1
Vg3
GND
RF IN
(0.0 µm, 0.0 µm)
(0.345, 0.09)
(1.09, 0.09)
(1.83, 0.09)
(2.87, 0.09)
(3.753, 1.04)
(3.755, 1.43)
(3.30, 1.59)
(2.25, 1.59)
(1.885, 1.59)
(0.424, 1.59)
(0.235, 1.59)
(0.095, 0.342)
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 3
Characteristic performance data and specifications are subject to change without notice.
RMDA00100
OC-192 Modulator Driver MMIC
Figure 3
Recommended
Assembly Diagram
RF
Input
RF
Output
5mil Thick
Alumina
50-Ohm
5 mil Thick
Alumina
50-Ohm
2 mil Gap
L< 0.015”
(2 Places)
Die-Attach
80Au/20Sn
10,000pF
Piconics
Spiral
Inductors
Vd
(+8V)
10,000pF
100pF
Vg1
(-ve)
100pF
10,000pF
10,000pF
Step 1: Turn off RF input power.
Step 2: Connect the DC supply grounds to the ground
of the chip carrier. Apply negative gate bias
supply voltage of –1.0 V to Vg1.
Step 3: Apply positive drain bias supply voltage of
+8.0 V to Vd, and monitor drain current Id.
Step 4: Adjust gate bias voltage Vg1 to set the
quiescent current of Idq ~ 100 mA.
Recommended
Procedure
for Biasing and
Operation
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. LOSS OF GATE VOLTAGES (Vg1) WHILE DRAIN VOLTAGES (Vg1)
IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP.
The following sequence must be followed to properly test the amplifier.
Step 5: After the bias connection is established, the
RF input signal may now be applied at the
appropriate frequency band. Adjust Vg1 for
best gain flatness.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage (Vd).
(iii) Turn down and off gate voltages(Vg1).
Note: When the device is under RF operation, the supply current Id will increase depending upon output power required.
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 4
Characteristic performance data and specifications are subject to change without notice.
Performance
Data
RMDA00100
OC-192 Modulator Driver MMIC
10 GHz Pout VS Pin
(Vds=8.0, Vg1=-0.31, Vg2=1.5, Id=100mA)
-10
-5
0
5
10
15
20
25
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Pin (dBm)
Pout (dBm)
Small Signal Frequency Response
Biased at Vd= 8.0, Id= 100 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30
S11 dB
S21 dB
S22 dB
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
www.raytheon.com/micro
ADVANCED INFORMATION
Revised November 14, 2001
Page 5
Characteristic performance data and specifications are subject to change without notice.
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