Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 1
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Description
2 Watt Linear output power at 38 dBc ACPR1 for CDMA operation
Small Signal Gain of 30 dB
Small outline SMD package
Features
Notes:
1. Only under quiescent conditions - no RF applied.
2. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. ACPR1 measured at 885 KHz offset at a value ≥ 38 dBc. CDMA
Waveform measured using the ratio of the average power within the 1.23 MHz channel and within a 30 kHz bandwidth at an 885 MHz offset.
3. Single tone at Band center.
4. Two tones: 1.25 MHz apart at Bandcenter: bias optimized.
5. Quiescent currents can be adjusted to optimize the linearity of the amplifier for differing operation. Default biasing is optimized for CDMA (Ref
Note 2). Gate voltages are to be adjusted to achieve these quiescent currents.
Electrical
Characteristics
(50 Ohm System,
VD = 7V, T = 25°C)
The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses Raytheon’s pHEMT process. It has
been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base
stations. The amplifier has been optimized for high linearity requirements for CDMA operation. The device is
matched for 50 ohms input impedance.
Absolute
Maximum
Ratings
Parameter Symbol Value Units
Drain Supply Voltage
1
V
D
+10 Volts
Gate Supply Voltage V
G
-5 Volts
RF Input Power (from 50 Ω source) P
RF
+5 dBm
Operating Case Temperature Range T
C
-30 to +85 °C
Storage Temperature Range T
S
-40 to +100 °C
Parameter Min Typ Max Unit
Frequency Range 1930 1990 MHz
Gain (small signal)
Over 1930-1990 MHz 30 dB
Gain variation:
Over frequency range +/-1 dB
Over temperature range +/- 1.5 dB
Noise Figure 6 dB
Linear output power:
for CDMA
2
33 dBm
Saturated output power
3
38 dBm
Parameter Min Typ Max Unit
OIP3
4
40.5 dBm
PAE (CDMA modulation
@2W)
2
20 %
Input VSWR (50 Ω)2:1
Drain Voltage (VD) 7 Volts
Gate Voltages -3 Volts
Quiescent current
(I
DQ1
,2, I
DQ3
)
5
180, 445 mA
Thermal Resistance
(Channel to Case) Rjc 11 °C/W
38 dBc ACPR1 at 885 KHz offset for 1.23 Mbps Forward Link at POUT = 33 dBm; PAE = 20% (9 Channel Forward - Pilot,
Paging, Traffic and Sync.)
> 30 dBc ACPR1 and > 48 dBc ACPR2 at 30 KHz and 60 KHz offsets for 48.6 Kbps NADC TDMA at POUT = 34 dBm;
PAE = 27%
> 30 dBc and > 60 dBc emissions at 200 KHz and 400 KHz offsets for 270 Kbps GSM at POUT = 34 dBm; PAE = 27%
For above conditions refer to Note 3.
* Voltage Rail = 7 volts
Typical
Performance
Data
RMBA19500-58
PCS 2 Watt Linear GaAs MMIC
Power Amplifier
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 2
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE.
The following describes a procedure for evaluating the RMBA19500-58, a monolithic high efficiency power
amplifier, in a surface mount package, designed for use as a driver stage for PCS Base station or as the final output
stage for Micro- and Pico-Cell base stations. Figure 1 shows the package outline and the pin designations. Figure
2 shows the functional block diagram of the packaged product. It should be noted that RMBA19500-58 requires
external passive components for DC bias and RF output matching circuits. A recommended schematic circuit is
shown in Figure 3. The gate biases for the three stages of the amplifier may be set by simple resistive voltage
dividers. Figure 4 shows a typical layout of an evaluation board, corresponding to the schematic circuits of figure
3. The following designations should be noted:
Application
Information
(1) Pin designations are as shown in figure 2.
(2) Vg1, Vg2 and Vg3 are the Gate Voltages (negative)
applied at the pins of the package
(3) Vgg1, Vgg2 and Vgg3 are the negative supply
voltages at the evaluation board terminals (Vg1and
Vg2 are tied together)
(4) Vd1, Vd2 and Vd3 are the Drain Voltages (positive)
applied at the pins of the package
(5) Vdd is the positive supply voltage at the evaluation
board terminal (Vd1, Vd2 and Vd3 are tied
together)
Note: The base of the package must be soldered
on to a heat sink for proper operation.
Figure 1
12 Lead Plastic Air
Cavity Package with
Integral Heat Sink
RF Out & Vd3
RF Out & Vd3
RF Out & Vd3
VD1
GND
VG1
RF In
GND
VG2
VD2
GND
VG3
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
DescriptionPin #
Dimensions in inches
10
11
1
2
3
456
7
8
9
12
BOTTOM VIEW
TOP VIEW
10
11
0.030
A
0.015
1
2
3
456
7
8
9
12
0.200 SQ.
RAY
RMBA
19500
0.041
13
PLASTIC LID
SIDE SECTION
0.075 MAX.
0.010
0.230
0.246
0.282
Figure 2
Functional Block
Diagram of
Packaged Product
Vg1
Pin# 6
Vg2
Pin# 9
Vd1
Pin# 4
Vd2
Pin# 10
GND
Pin# 5, 8, 11, 13
Vg3
Pin# 12
RF IN
Pin# 7
RF OUT & Vd3
Pin# 1, 2, 3
RMBA19500-58
PCS 2 Watt Linear GaAs MMIC
Power Amplifier
Page 3
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 3
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Figure 3
Schematic of
Application Circuit
showing external
components
Figure 4
Layout of Test
Evaluation Board
(RMBA19500-58-TB)
J1
RF Input
J2
RF Output
HS (Heat-sink is attached
under base of RMBA19500-58)
GND VG1,2
GND GND GND
VG3 VDD
RMBA19500-58
PCS 2 Watt Linear GaAs MMIC
Power Amplifier
Page 4
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 4
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Parts List
for Test Evaluation Board
(RMBA19500-58-TB,
G654188/G654942)
Part Value Size (EIA) Vendor(s)
L1, L2 5.6 nH .06” x .03” Toko (LL1608-F5N6)
L3 8.2 nH .08” x .05” Coilcraft (0805HT-8N2TKBC)
C1 10 pF .06” x .03” Murata (GRM39COG100J050AD)
C2 2.2 pF .06” x .03” Murata (GRM39COG2R2J050BD)
C3, C4, C5 1500 pF .06” x .03” Murata (GRM39Y5V152Z50V)
C10, C9 2.2 pF .06” x .03” Murata (GRM39COG2R2J050BD)
C8 10.0 uF .12”x.06” TDK (CC1206JX5R106M)
C6,C7 0.1uF Murata (GRM39Y5V104Z)
R1-R5 20 Ohms .06”x .03” IMS (RCI-0603-20R0J)
R2 180 Ohms .06”x .03” IMS (RCI-0603-1800J)
R3 3.3K Ohms .06”x .03” IMS (RCI-0603-3301J)
R4 30 Ohms .06”x .03” IMS (RCI-0603-30R0J)
U1 RMBA19500-58 .31” x .41 Raytheon, G654466/G653367
HS Heatsink Raytheon, G655548
P1-P5 Terminals Samtec (TSW-102-09-T-S-RE)
J1, J2 SMA Connectors E.F. Johnson (142-0701-841)
Board FR4 Raytheon Dwg# G654187/G654941
Recommendations
for Heat-Sinking the
RMBA19500-58
PWB must be prepared with a heat sink, made of a highly conductive (electrical and thermal) material such as
copper or aluminum with necessary surface plating, attached to the backside of PWB where the package is to be
mounted on the front side. A small pedestal in the heat sink should protrude through a hole in the PWB where the
package bottom is directly soldered. Use Sn/Pb (67/37) solder (or Sn/Pn/Ag 62/36/2 solder) at 220°C for 20
seconds or less. The package bottom should be firmly soldered to the pedestal while the pins are soldered to the
respective pads on the front side of PWR without causing any stress on the pins. To accomplish stress free
mounting, the top surface of the pedestal should be made flush with the top surface of PWB. Remove flux
completely if used for soldering.
CAUTION: LOSS OF GATE VOLTAGES (VG1, VG2, VG3) WHILE CORRESPONDING DRAIN VOLTAGES (Vdd) ARE
PRESENT CAN DAMAGE THE AMPLIFIER.
The following sequence must be followed to properly test the amplifier. (It is necessary to add a fan to provide air
cooling across the heat sink of RMBA19500.)
Test Procedure
for the evaluation board
(RMBA19500-58-TB)
Step 1: Turn off RF input power.
Step 2: Use GND terminal of the evaluation board for
the ground of the DC supplies. Set Vgg1, Vgg2
and Vgg3 to -3V (pinch-off).
Step 3: Slowly apply drain supply voltages of +7 V to
the board terminal Vdd ensuring that there is
no short.
Step 4: Adjust Vgg12 down from -3V until the drain
current (with no RF applied) increases to Idq12
as per supplied result sheet. Then adjust Vgg3
until the total drain current becomes equal to
the sum of Idq12 and Idq3
.
Step 5: After the bias condition is established, RF input
signal may now be applied at the appropriate
frequency band and appropriate power level.
Step 6: Follow turn-off sequence of:
(i) Turn off RF Input Power
(ii) Turn down and off drain voltage Vdd.
(iii) Turn down and off gate voltages Vgg1,
Vgg2 and Vgg3.
RMBA19500-58
PCS 2 Watt Linear GaAs MMIC
Power Amplifier
Page 5
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 5
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
Performance
Data
RMBA19500-58
PCS 2 Watt Linear GaAs MMIC
Power Amplifier
Page 6
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Revised February 6, 2001
Page 6
www.raytheon.com/micro
Characteristic performance data and specifications are subject to change without notice.
ADVANCED INFORMATION
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