Datasheet RM4558D, RM4558D-883B Datasheet (Fairchild Semiconductor)

www.fairchildsemi.com

Features

• 2.5 MHz unity gain bandwidth

• Supply voltage ±22V for RM4558 and ±18V for RC/RV4558

• Short-circuit protection

• No frequency compensation required

Description

The RC4558 integrated circuit is a dual high-gain operational ampliﬁer internally compensated and constructed on a single silicon IC using an advanced epitaxial process.

Combining the features of the 741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of this dual device in dense single 741 operational ampliﬁer applications. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric ampliﬁers and where gain and phase matched channels are mandatory.

• No latch-up

• Large common-mode and differential voltage ranges

• Low power consumption

• Parameter tracking over temperature range

• Gain and phase match between ampliﬁers

Block Diagram

65-4558-01

A

Output (A)

–Input (A) –Input (A)

Output (B) –Input (B) +Input (B)

B

+

_

+

_

RC4558

Dual High-Gain Operational Ampliﬁer

Rev. 1.0.0

PRODUCT SPECIFICATION RC4558

2

Pin Assignments

Absolute Maximum Ratings

(beyond which the device may be damaged)

1

Notes:

1. Functional operation under any of these conditions is NOT implied.

2. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage.

3. Short circuit may be to ground on one op amp only. Rating applies to +75°C ambient temperature.

Matching Characteristics

(VS = ±15V, TA = +25°C unless otherwise speciﬁed)

Parameter Min Typ Max Units

Supply Voltage RM4558 ±22 V

RC4558 ±18

Input Voltage

2

±15 V Differential Input Voltage 30 V PDTA < 50°C SOIC 300 mW

PDIP 468 CerDIP 833 TO-99 658

Junction Temperature SOIC, PDIP 125 °C

CerDIP, TO-99 175

Operating Temperature RM4558 -55 125 °C

RC4558 0 70

Lead Soldering Temperature PDIP, CerDIP, TO-99 (60 sec) 300 °C

SOIC (10 sec) 260

Output Short Circuit Duration

3

Indeﬁnite

Parameter Test Conditions Typ Units

Voltage Gain RL ³ 2 kW±1.0 dB Input Bias Current RL ³ 2 kW±15 nA Input Offset Current RL ³ 2 kW±7.5 nA

1

2

3

4

5

6

7

8

65-3473-02

Output (A)

–Input (A)

+Input (A)

Output (B)

–Input (B)

+Input (B)

–V

S

+V

S

Output (A)

–Input (A)

+Input (A)

–V

S

+V

S

Output (B)

–Input (B)

+Input (B)

1

2

3

4

8

7

6

5

65-3473-03

RC4558 PRODUCT SPECIFICATION

3

Electrical Characteristics

(VS = ±15V and TA = +25°C unless otherwise speciﬁed)

The following speciﬁcations apply for RM = -55°C £ T

A

£ +125°C, RC = 0° £ TA £ +70°C

RM4558 RC4558

Parameters Test Conditions Min Typ Max Min Typ Max Units

Input Offset Voltage R

S

£ 10kW 1.0 5.0 2.0 6.0 mV Input Offset Current 5.0 200 5.0 200 nA Input Bias Current 40 500 40 500 nA Input Resistance 0.3 1.0 0.3 1.0 MW Large Signal Voltage Gain RL ³ 2kW, V

OUT

= ±10V 50 300 20 300 V/mV

Output Voltage Swing R

L

³ 10kW±12 ±14 ±12 ±14 V

RL ³ 2kW±10 ±13 ±10 ±13 V Input Voltage Range ±12 ±13 ±12 ±13 V Common Mode Rejection Ratio RS £ 10kW 70 100 70 100 dB Power Supply Rejection Ratio RS £ 10kW 76 100 76 100 dB Power Consumption RL = ¥ 100 170 100 170 mW Transient Response VIN = 20 mV Rise Time RL = 2kW 0.3 0.3 mS Overshoot CL £ 100pF 35 35 % Slew Rate R

L

³ 2kW 0.8 0.8 V/mS Channel Separation F = 10kHz, RS = 1kW 90 90 dB Unity Gain Bandwidth (Gain = 1) 2.5 3.0 2.0 3.0 MHz

Parameters Test Conditions

RM4558 RC4558

Min Typ Max Min Typ Max Units

Input Offset Voltage R

S

£ 10kW 6.0 7.5 mV Input Offset Current RC4558 500 300 nA Input bias Current RC4558 1500 800 nA Large Signal Voltage Gain RL ³ 2kW, V

OUT

= ±10 25 15 V/mV Output Voltage Swing RL ³ 2kW±10 ±10 V Power Consumption RL = ¥ 120 200 120 200 mW

PRODUCT SPECIFICATION RC4558

4

Typical Performance Characteristics

Figure 1. Input Bias Current vs. Temperature Figure 2. Input Offset Current vs. Temperature

Figure 3. Input Common Mode Voltage Range Figure 4. Open Loop Voltage Gain vs. Frequency

vs. Supply Voltage

Figure 5. Open Loop Voltage Gain vs. Temperature Figure 6. Power Consumption vs. Temperature

65-0211

TA (¡C)

I

B

(nA)

100

80

60

40

20

0

0 +10 +20 +30 +40 +50 +60 +70

V = 15V

S

65-0212

TA (¡C)

I

OS

(nA)

25

20

15

10

5

0

0 +10 +20 +30 +40 +50 +60 +70

V = 15V

S

65-0213

±VS (V)

V

CM

(V)

15 10

5 0

-5

-10

-15 ±4 ±6 ±8 ±10 ±12 ±14 ±16 ±18

T = +25 C

A

65-0214

F (Hz)

A

VOL

(dB)

120 100

80 60 40 20

0

-20 1 10 100 1K 10K 100K 1M 10M

65-0215

TA (¡C)

A

VOL

(V/mV)

800K

600K

400K

200K

0

0 +10 +20 +30 +40 +50 +60 +70

R = 2 k

L

V = 15V

S

W

65 0216

TA (¡C)

P

C

(mV)

140

120

100

80

60

0 +10 +20 +30 +40 +50 +60 +7

0

V = 15V

S

RC4558 PRODUCT SPECIFICATION

5

Typical Performance Characteristics (continued)

Figure 7. Output Voltage Swing vs. Supply Voltage Figure 8. Output Voltage Swing vs. Load Resistance

Figure 9. Output Voltage Swing vs. Freqeuncy Figure 10. Quiescent Current vs. Supply Voltage

Figure 11. Transient Response Output Figure 12. Follower Large Signal Pulse Response

Voltage vs. Time Output Voltage vs. Time

65-0217

V

OUT

(V)

+VS/-VS (V)

15 10

5 0

-5

-10

-15 ±4 ±6 ±8 ±10 ±12 ±14 ±16 ±18

T = +25 C

A

R = 2 k

L

W

65-0218

V

OUT P-P

(V)

RL (kW)

28 26 24 22 20 18 16 14 12 10

8

0.1 1.0 10

V = 15V T = +25 C

S A

65-0219

F (Hz)

V

OUT P-P

(V)

40 36 32 28 24 20 16 12

8 4 0

100 1K 10K 100K 1M

V = 15V T = +25 C R = 2 kW

S A

L

65-0220

+VS/-VS (V)

I

Q

(mA)

5

4

3

2

1

0

T = +25 C

A

0 ±3 ±6 ±9 ±12 ±15 ±18

65-0221

V

OUT

(mV)

Time (µS)

28 24 20 16 12

8 4 0

90%

10% Rise Time

0 0.25 0.50 0.75 1.00 1.25

V = 15V T = +25 C R = 2 k C = 100 pF

S A

L L

W

65-0222

Time (µS)

V

OUT

(V)

10

8 6 4 2 0

-2

-4

-6

-8

-10 0 10203040

V = 15V T = +25 C

S A

Output

Input

PRODUCT SPECIFICATION RC4558

6

Typical Performance Characteristics (continued)

Figure 13. Input Noise Current Density vs. Frequency Figure 14. Input Noise Voltage Density vs. Frequency

Figure 15. Channel Separation vs. Frequency Figure 16. Total Harmonic Distortion vs Output Voltage

Figure 17. Distortion vs. Frequency

I

N

(pA/ Hz)

F (Hz)

65-0223

100

10

0

0.1 1 10 100 1K 10K 100K

V = 15V T = +25 C R = 50 A = 60 dB

W

S A

S V

e

n

(nV/ Hz)

F (Hz)

65-0224

1000

100

10

1

0

10 100 1K 10K 100K

V = 15V T = +25 C R = 50 A = 60 dB

W

S A

S V

CS (dB)

F (Hz)

65-0225

140 120 100

80 60 40 20

0

10

100 1K 10K 100K

V = 15V T = +25 C

S A

THD (%)

V (V )

65 0226

0.6

0.5

0.4

0.3

0.2

0.1 0

1

23

4

5

678910

OUT RMS

V = 15V R = 2K A = 40 dB f = 1 kHz R = 1k

S

L

S

V

W

THD (%)

F (Hz)

65-0227

10

0.6

0.5

0.4

0.3

0.2

0.1 0

100 1K 10K 100K

V = 1 V V = 30V

OUT S

RMS

RC4558 PRODUCT SPECIFICATION

7

Typical Applications

Figure 18. Voltage Follower Figure 19. Lamp Driver

Figure 20. Power Amplifier Figure 21. Comparator With Hysteresis

Figure 22. Squarewave Oscillator Figure 23. DC Coupled 1kHz Low-Pass Active Filter

W

+V

S

+V

S

65-0229

100

5K

3

2

1

4558A

4

8

65-0228

V

IN

V

OUT

3

2

1

4558A

65-0230

+V

S

V

IN

100K

910K

91K

A = 10

V

100K

V

OUT

3

2

1

4558A

-V

IN

+V

REF

65-0231

10M

10K

V

OUT

3

2

1

4558A

V

OUT

65-0232

+V

S

1 0

100K

+V

S

0.001µF 3

2

1

4558A

4

65-0233

0.01µF

100K

V

OUT

0.01µF

16K

V

IN

3

2

1

4558A

PRODUCT SPECIFICATION RC4558

8

Typical Applications (continued)

Figure 24. AC Coupled Non-Inverting Amplifier Figure 25. AC Coupled Inverting Amplifier

Figure 26. 1kHz Bandpass Active Filter

Figure 27. Voltage Controlled Oscillator (VCO)

IN

V

1M

100K

0.1µF 10µF

1M

100K

10K

+V

S

OUT

V

+V

S

65-0234

3

2

1

4558A

4

8

4

65-0236

OUT

V

10K

+V

S

100K10 F

m

100K

+V

S

IN

V

10K

100K

3

2

1

4558A

4

65-0235

V

OUT

S

-V

120K

100K

+V

S

IN

V

390K

620½

0.01 µF

0.01µF

620K

10µF

390K

+V

S

100K

39K

3

2

1

4558A

4

5

6

7

4558B

4

8

65-0237

100K

51K

0.05 µF

51K

R/2 50K

+V

C*

51K

10K

+V /2

S

100K

V

OUT 1

* Wide control voltage range: 0V < VS < 2(+VS – 1.5VS)

3

2

1

4558A

5

6

7

4558B

V

OUT 2

RC4558 PRODUCT SPECIFICATION

9

Simpliﬁed Schematic Diagram

65-0208

Q6

Output

(1,7)

Q7

D2

5.8K

Q8

120

Q15

R7

27

R6 27

Q14

Q10

Q12

Q13

R5

50K

D1

C2

15 pF

Q9

Q11

R4

50K

R3 5K

Q4

C1

15 pF

R2 5K

Q3

-V (4)

S

(3,5)

(2,6)

-Input

Q2 Q1

Q5

R1

8.7K

+V

(8)

S

+Input

PRODUCT SPECIFICATION RC4558

5/20/98 0.0m 001

Stock#DS30004558

Ó 1998 Fairchild Semiconductor Corporation

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:

1.Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2.A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

Ordering Information

Note:

1./883B suffix denotes MIL-STD-883, Par. 1.2.1 compliant device.

Product Number Temperature Range Screening Package

RC4558M 0° to 70°C Commercial 8 Pin Wide SOIC RC4558N 0° to 70°C Commercial 8 Pin Plastic DIP RM4558D 0° to 70°C Commercial 8 Pin Ceramic DIP RM4558D/883B -55°C to +125°C Military 8 Pin Ceramic DIP