Datasheet RLD-78NP-G1, RLD-78PP-G1 Datasheet (ROHM)

Page 1
RLD-78PP-G1 / RLD-78NP-G1
Laser Diodes
Title AlGaAs, double-heterojunction, visible laser diodes
RLD-78PP-G1 / RLD-78NP-G1
RLD-78PP-G1 and RLD-78NP-G1 are the semiconductor laser developed for the laser beam printer application. We have achieved the very small variations of the optical characteristics and low droop by ROHM original Epitaxial growth technology using Molecular Beam Epitaxy. In addition, they have the appropriate characteristics for sensor application as well.
Applications
!!!!
Laser beam printers Sensors
Features
!
1) Minimum variation of radiation beam angle.
2) Low droop.
3) High stability wave length.
4) Can be driven by single power supply.
Absolute maximum ratings
!!!!
Parameter Symbol
Output
Laser PIN photodiode
Reverse
voltage
Operating temperature Storage temperature
(Tc=25°C)
Po
R
V
R(PIN)
V
Topr Tstg
External dimensions
!!!!
90˚±2˚
0.4±0.1
1.0±0.1
φ5.6
2.3 (1.27)
1.2±0.1
6.5±0.5
(3)
Limits
5 2
30
-10~+60
-40~+85
(Units : mm)
+0
0.025
3−φ0.45
(2) (1)
Unit mW
V V
˚C ˚C
φ1.0Min.
φ3.6
Glass window
Chip
φ4.4+0
P T
y p
e
N T
y
p e
(3)
L.D. P.D.
(1) (2)
(3)
L.D. P.D.
(1) (2)
Page 2
Laser Diodes
Electrical and optical characteristics
!!!!
RLD-78PP-G1 / RLD-78NP-G1
(Ta=25°C)
Parameter Symbol Threshold current Operating current Operating voltage
Differential efficiency Monitor current
Parallel divergence
angle
Perpendicular
divergence angle
Parallel deviation angle Perpendicular deviation
angle
Emission point
accuracy
Peak emission
wavelength
Droop
θ
//
and
θ
*
are defined as the angle within which the intensity is 50% of the peak value.
I
th
I
op
V
η
I
m
θ
θ
∆φ
∆φ
XYZ
λ
P
Min.
Typ.
Max.
10
25
15
45
op
//
-
1.9
0.1
0.2
0.3
0.55
*
8
11
*
25
30
-
//
-
-
-
-
770
-
±80
--
795
785
5
45 65
2.3
0.3
0.9 15
38 ±2 ±3
10
Unit
mA mA
V
mW/mA
mA
deg
deg deg deg
µm
nm
%
Conditions
-
Po=
3mW
Po=
3mW
2mW
I(3mW)I(1mW
Po=
3mW
Po=
3mW
Po=
3mW
Po=
3mW
)
Electrical and optical curves
!!!!
5
25˚C 40˚C 50˚C 60˚C
10
20 30 40 50 60 70 80
OPERATING CURRENT : IF (mA)
OPTICAL POWER : PO (mW)
4
3
2
1
0
Fig. 1 Optical output vs. operating current
100
90 80 70
mA)
(
60
th
50 40
30
20
THRESHOLD CURRENT : I
10
-10 0 10-20 20 30 40 50 60 70 PACKAGE TEMPERATURE : T
Fig. 2 Dependence of threshold current
on temperature
1.0
θ direction θ direction
0.5
RELATIVE OPTICAL INTENSITY
0
-40
C
(˚C)
040
ANGLE (deg)
Fig. 3 Far field pattern
Page 3
Laser Diodes
RLD-78PP-G1 / RLD-78NP-G1
OPTICAL POWER : PO=3mW
PACKAGE TEMPERATURE : Tc (˚C)
WAVELENGTH : λ (nm)
790
785
780
775
25
Fig. 4 Dependence of wavelength
on temperature
60
dP=30%
20%
50
40
TEMPERATURE (˚C)
30
25
12
345
OPTICAL POWER (
mW)
60504030
T
C
=25˚C
O
=5mW
P
O
=3mW
P
O
=1mW
P
RELATIVE OPTICAL INTENSITY
775 780 785 790 795
WAVELENGTH : λ (
nm)
Fig. 5 Dependence of emission
spectrum on optical output
16
10%15%
14 12
10
8
DROOP (%)
6 4
2
TC=60˚C
25˚C
1623045
OPTICAL POWER (
mW)
5
4
mW)
(
O
3
2
1
OPTICAL POWER : P
0
0.2 0.4 0.6 0.8 1.0
MONITOR CURRENT : I
m
(
Fig. 6 Monitor current vs. optical output
mA)
Fig. 7 Temperature vs. output guidelines
for various droop percentages
Fig. 8 Dependence of droop on output
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