Page 1
RHRU7540, RHRU7550, RHRU7560
Data Sheet April 1995 File Number 3945.1
75A, 400V - 600V Hyperfast Diodes
RHRU7540, RHRU7550 and RHRU7560 (TA49067) are
hyperfast diodes with soft recovery characteristics
(t
< 55ns). They have half the recovery time of ultrafast
RR
diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU7540 TO-218 RHRU7540
RHRU7550 TO-218 RHRU7550
RHRU7560 TO-218 RHRU7560
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<55ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . .600V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
C
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = +80oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . .T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
STG
Symbol
K
A
RHRU7540 RHRU7550 RHRU7560 UNITS
400 500 600 V
400 500 600 V
R
D
AVL
, TJ-65 to +175 -65 to +175 -65 to +175
400 500 600 V
75 75 75 A
150 150 150 A
750 750 750 A
190 190 190 W
50 50 50 mj
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Page 2
RHRU7540, RHRU7550, RHRU7560
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU7540 RHRU7550 RHRU7560
SYMBOL TEST CONDITION
V
F
IF = 75A, TC = +25oC - - 2.1 - - 2.1 - - 2.1 V
IF = 75A, TC = +150oC - - 1.7 - - 1.7 - - 1.7 V
I
R
VR = 400V, TC = +25oC --500------µA
VR = 500V, TC = +25oC -----500---µA
VR = 600V, TC = +25oC --------500µA
I
R
VR = 400V, TC = +150oC --2.0------mA
VR = 500V, TC = +150oC -----2.0---mA
VR = 600V, TC = +150oC --------2.0mA
t
RR
IF = 1A, dIF/dt = 100A/µs - -55- -55- -55ns
IF = 75A, dIF/dt = 100A/µs - -60- -60- -60ns
t
A
t
B
Q
RR
C
J
R
θJC
IF = 75A, dIF/dt = 100A/µs - 35 - - 35 - - 35 - ns
IF = 75A, dIF/dt = 100A/µs - 18 - - 18 - - 18 - ns
IF = 75A, dIF/dt = 100A/µs - 90 - - 90 - - 90 - nC
VR = 10V, IF = 0A - 200 - - 200 - - 200 - pF
- - 0.8 - - 0.8 - - 0.8
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
= Instantaneous reverse current.
I
R
t
= Reverse recovery time (See Figure 2), summation of tA + tB.
RR
= Time to reach peak reverse current (See Figure 2).
t
A
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
t
B
Q
= Reverse recovery charge.
RR
= Junction Capacitance.
C
J
= Thermal resistance junction to case.
R
θJC
E
= Controlled avalanche energy. (See Figures 10 and 11).
AVL
pw = pulse width.
D = duty cycle.
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
Q
1
t
3
R
3
FIGURE 1. t
R
1
R
2
C1
Q
3
TEST CIRCUIT
RR
2
+V
3
t1 5t
R
t2 > t
t3 > 0
L
1
R
4
4
A(MAX)
RR
t
£
DUT
A(MIN)
10
dI
F
I
F
dt
0
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
Q
2
L
LOOP
Q
4
-V
4
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
Page 3
Typical Performance Curves
RHRU7540, RHRU7550, RHRU7560
300
100
+100oC
10
, FORWARD CURRENT (A)
F
I
+175oC
1
0 0.5 1.0 1.5 2.0 2.5 3.0
+25oC
VF, FORWARD VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
= +25oC
T
60
50
40
30
t
RR
t
A
C
5000
1000
100
10
1
, REVERSE CURRENT (µA)
R
0.1
I
0.01
0 200 400 600300 500
100
VR, REVERSE VOLTAGE (V)
+175oC
+100oC
+25oC
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
150
125
100
75
t
RR
t
A
TC = +100oC
20
t, RECOVERY TIMES (ns)
10
0
1
IF, FORWARD CURRENT (A)
t
B
10
FIGURE 5. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +25oC
250
200
150
100
t, RECOVERY TIMES (ns)
50
0
t
RR
t
A
t
B
10
I
, FORWARD CURRENT (A)
F
TC = +175oC
FIGURE 7. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +175oC
50
t, RECOVERY TIMES (ns)
25
75
0
I
, FORWARD CURRENT (A)
F
t
B
10
751
FIGURE 6. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +100oC
75
100
DC
125
150
175
60
SQ. WAVE
45
30
15
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
751
25
50
75
, CASE TEMPERATURE (oC)
T
C
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
3
Page 4
RHRU7540, RHRU7550, RHRU7560
Typical Performance Curves (Continued)
600
500
400
300
200
, JUNCTION CAPACITANCE (pF)
100
J
C
0
0 50 100 150 200
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
= 1A
I
MAX
L = 40mH
R < 0.1Ω
= 1/2LI2 [V
E
AVL
AND Q2 ARE 1000V MOSFETs
Q
1
AVL
/(V
AVL
- VDD)]
Q
1
L
VR, REVERSE VOLTAGE (V)
R
+
V
DD
12V
130Ω
Q
2
130Ω
1MΩ
DUT
CURRENT
SENSE
V
AVL
I
L
IV
V
DD
I
L
-
12V
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
t
0
WAVEFORM
t
1
t
2
t
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
4
Loading...