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RHRU5070
Datasheet (Intersil)
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Datasheet RHRU5070, RHRU5080, RHRU5090RHRU50100 Datasheet (Intersil)

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RHRU5070, RHRU5080, RHRU5090, RHRU50100
50A, 700V - 1000V Hyperfast Diodes
RHRU5070, RHRU5080, RHRU5090 and RHRU50100 (TA49066) are hyperfast diodes with soft recovery character­istics (t
RR
< 75ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion­implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp­ing diodes and rectifiers in a variety of switching power sup­plies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reduc­ing power loss in the switching transistors.
Ordering Information
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
JEDEC STYLE TO-218
Symbol
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU5070 TO-218 RHRU5070 RHRU5080 TO-218 RHRU5080 RHRU5090 TO-218 RHRU5090 RHRU50100 TO-218 RHRU50100
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
ANODE
K
A
Absolute Maximum Ratings T
C
= +25oC, Unless Otherwise Specified
RHRU5070 RHRU5080 RHRU5090 RHRU50100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
700 800 900 1000 V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
700 800 900 1000 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
700 800 900 1000 V
Average Rectified Forward Current. . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(TC = +65oC)
50 50 50 50 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
100 100 100 100 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
500 500 500 500 A
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
150 150 150 150 W
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
40 40 40 40 mj
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . .T
STG
, TJ-65 to +175 -65 to +175 -65 to +175 -65 to +175oC
Data Sheet April 1995 File Number 3665.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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Electrical Specifications T
C
= +25oC, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRU5070 RHRU5080 RHRU5090 RHRU50100
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX
V
F
IF = 50A, TC = +25oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V IF = 50A, TC = +150oC - - 2.5 - - 2.5 - - 2.5 - - 2.5 V
I
R
VR = 700V, TC = +25oC --500---------µA VR = 800V, TC = +25oC -----500------µA VR = 900V, TC = +25oC --------500---µA VR = 1000V, TC = +25oC -----------500µA
I
R
VR = 700V, TC = +150oC --3.0---------mA VR = 800V, TC = +150oC -----3.0------mA VR = 900V, TC = +150oC --------3.0---mA VR = 1000V, TC = +150oC -----------3.0mA
t
RR
IF = 1A, dIF/dt = 100A/µs - -75- -75- -75- -75ns IF = 50A, dIF/dt = 100A/µs - -95- -95- -95- -95ns
t
A
IF = 50A, dIF/dt = 100A/µs - 54 - - 54 - - 54 - - 54 - ns
t
B
IF = 50A, dIF/dt = 100A/µs - 32 - - 32 - - 32 - - 32 - ns
Q
RRIF
= 50A, dIF/dt = 100A/µs - 125 - - 125 - - 125 - - 125 - nC
C
J
VR = 10V, IF = 0A - 150 - - 150 - - 150 - - 150 - pF
R
θJC
- - 1.0 - - 1.0 - - 1.0 - - 1.0oC/W
DEFINITIONS
VF= Instantaneous forward voltage (pw = 300µs, D = 2%).
I
R
= Instantaneous reverse current.
t
RR
= Reverse recovery time (Figure 2), summation of tA+tB.
t
A
= Time to reach peak reverse current (See Figure 2).
t
B
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
R
θJC
= Thermal resistance junction to case.
E
AVL
= Controlled avalanche energy (See Figure 10 and Figure 11).
pw = Pulse width.
D = Duty cycle.
FIGURE 1. tRR TEST CIRCUIT
FIGURE 2. WAVEFORMS AND DEFINITIONS
C1
L
LOOP
DUT
Q
3
R
3
Q
4
Q
2
R
1
R
2
-V
4
Q
1
-V
2
0
0
+V
1
t
1
t
2
t
3
R
4
+V
3
V1 AMPLITUDE CONTROLS I
F
V2 AMPLITUDE CONTROLS dIF/dt L
1
= SELF INDUCTANCE OF
t
1
≥ 5t
A(MAX)
t2 > t
RR
t3 > 0
L
1
R
4
t
A(MIN)
10
≤
R4+ L
LOOP
I
F
t
RR
t
A
t
B
0
I
RM
0.25 I
RM
V
R
V
RM
dI
F
dt
RHRU5070, RHRU5080, RHRU5090, RHRU50100
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Typical Performance Curves
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-
AGE
FIGURE 5. TYPICAL t
RR,tA
AND tBCURVES vs FORWARD
CURRENT AT +25oC
FIGURE 6. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +100oC
FIGURE 7. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +175oC
FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
VF, FORWARD VOLTAGE - (V)
I
F
, FORWARD CURRENT - (A)
1
250
100
10
0
0.5
1
1.5
2
2.5
3
3.5
4
+175oC
+100oC
+25oC
VR, REVERSE VOLTAGE - (V)
0 200 400 600
800
3000
100
0.01
0.1
1
10
I
R
, REVERSE CURRENT - (µA)
1000
1000
+175oC
+25oC
+100oC
I
F
, FORWARD CURRENT - (A)
t, RECOVERY TIMES - (ns)
50
0
40
10
100
10
1
t
B
60
80
t
A
t
RR
TC = +25oC
t, RECOVERY TIMES - (ns)
IF, FORWARD CURRENT - (A)
50
10
1
0
50
200
100
150
t
RR
t
A
t
B
TC = +100oC
t, RECOVERY TIMES - (ns)
IF, FORWARD CURRENT - (A)
50
10
1
0
100
400
200
300
t
RR
t
A
t
B
TC = +175oC
50
10
0
25
50
100
150 175
125
20
30
40
T
C
, CASE TEMPERATURE - (oC)
I
F
(AV), AVERAGE FORWARD CURRENT - (A)
75
DC
SQ. WAVE
RHRU5070, RHRU5080, RHRU5090, RHRU50100
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However,no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240
EUROPE
Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
FORMS
Typical Performance Curves (Continued)
VR, REVERSE VOLTAGE (V)
100
500
0
200
0
50
100
150
200
400
300
C
J
, JUNCTION CAPACITANCE (pF)
+
12V
12V
1MΩ
DUT
130Ω
130Ω
Q1
Q2
CURRENT SENSE
V
DD
R
L
-
I
MAX
= 1A
L = 40mH R < 0.1Ω E
AVL
= 1/2LI2[V
AVL
/(V
AVL
- VDD)]
Q1 AND Q2 ARE 1000V MOSFETS
IV
t
0
t
1
t
2
I
L
V
AVL
t
RHRU5070, RHRU5080, RHRU5090, RHRU50100
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