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RHRU50120
April 1995 File Number 3946.1
50A, 1200V Hyperfast Diode
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t
< 85ns). They have half the
RR
recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reducing power loss in the switching transistors.
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER PACKAGE BRAND
RHRU50120 TO-218 RHRU50120
NOTE: When ordering, use the entire part number.
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
C
Symbol
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(TC = 50oC)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
= +25oC, Unless Otherwise Specified
C
RRM
RWM
F(AV)
FSM
FSM
AVL
STG
, T
K
A
RHRU50120 UNITS
1200 V
1200 V
R
D
J
1200 V
50 A
100 A
500 A
150 W
50 mj
-65 to +175
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
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RHRU50120
Electrical Specifications T
= +25oC, Unless Otherwise Specified
C
RHRU50120 LIMITS
SYMBOL MIN TYP MAX UNITS
V
F
IF = 50A, TC = +25oC - - 3.2 V
TEST CONDITION
IF = 50A, TC = +150oC - - 2.6 V
I
R
VR = 1200V, TC = +25oC - - 500 µA
VR = 1200V, TC = +150oC - - 1.0 mA
t
RR
IF = 1A, dIF/dt = 100A/µs--85ns
IF = 50A, dIF/dt = 100A/µs - - 100 ns
t
A
t
B
Q
RR
C
J
R
θJC
IF = 50A, dIF/dt = 100A/µs - 50 - ns
IF = 50A, dIF/dt = 100A/µs - 40 - ns
IF = 50A, dIF/dt = 100A/µs - 240 - nC
VR = 10V, IF = 0A - 150 - pF
- - 1.0
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
I
= Instantaneous reverse current.
R
= Reverse recovery time (See Figure 2), summation of tA + tB.
t
RR
= Time to reach peak reverse current (See Figure 2).
t
A
t
= Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
B
= Reverse recovery charge.
Q
RR
= Junction Capacitance.
C
J
R
= Thermal resistance junction to case.
θJC
= Controlled avalanche energy. (See Figures 10 and 11).
E
AVL
pw = pulse width.
D = duty cycle.
o
C/W
V1 AMPLITUDE CONTROLS I
V2 AMPLITUDE CONTROLS dIF/dt
= SELF INDUCTANCE OF
L
1
R4+ L
LOOP
+V
1
0
t
2
t
1
0
-V
2
F
t
3
R
3
FIGURE 1. tRR TEST CIRCUIT
+V
3
≥ 5t
Q
L
LOOP
4
R
t
1
t2 > t
t3 > 0
L
R
4
1
4
RR
≤
DUT
A(MAX)
t
A(MIN)
10
dI
F
I
F
dt
0
V
RM
t
RR
t
A
t
B
0.25 I
RM
I
RM
V
R
R
1
Q
1
R
2
Q
3
C1
Q
2
-V
4
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS
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Typical Performance Curves
RHRU50120
300
100
+100oC
10
FORWARD CURRENT (A)
F,
I
1
+175oC
01 2 34
VF, FORWARD VOLTAGE (V)
+25oC
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
VOLTAGE DROP
= +25oC
T
100
80
60
40
t, RECOVERY TIMES (ns)
20
t
RR
t
C
A
t
B
3000
1000
100
10
1
, REVERSE CURRENT (µA)
R
I
0.1
0 400 800 1200600 1000
200
VR, REVERSE VOLTAGE (V)
+175oC
+100oC
+25oC
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
VOLTAGE
t
RR
t
A
t
TC = +100oC
B
250
200
150
100
t, RECOVERY TIMES (ns)
50
0
IF, FORWARD CURRENT (A)
10
FIGURE 5. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +25oC
t
RR
t
A
t
B
TC = +175oC
400
300
200
100
t, RECOVERY TIMES (ns)
0
10
, FORWARD CURRENT (A)
I
F
FIGURE 7. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +175oC
501
0
1
, FORWARD CURRENT (A)
I
F
10
50
FIGURE 6. TYPICAL tRR,tAAND tBCURVES vs FORWARD
CURRENT AT +100oC
50
40
30
20
10
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
501
0
SQ. WAVE
5025 175150
T
DC
75
, CASE TEMPERATURE (oC)
C
100
125
FIGURE 8. CURRENT DERATING CURVE
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Typical Performance Curves (Continued)
600
500
400
300
200
, JUNCTION CAPACITANCE (pF)
100
J
C
0
0 50 100 150 200
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
= 1A
I
MAX
L = 40mH
R < 0.1Ω
= 1/2LI2 [V
E
AVL
AND Q2 ARE 1000V MOSFETs
Q
1
AVL
/(V
AVL
- VDD)]
Q
1
L
RHRU50120
VR, REVERSE VOLTAGE (V)
R
+
V
DD
12V
130Ω
Q
2
130Ω
1MΩ
DUT
CURRENT
SENSE
V
AVL
I
L
IV
V
DD
I
L
-
t
12V
0
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
1
t
2
t
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Intersil semiconductor products are sold by description only .Intersil Corporation reserves the right to makechanges in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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