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RHRU150120
Data Sheet January 2000
150A, 1200V Hyperfast Diode
The RHRU150120 is a hyperfast diode with soft recovery
characteristics (t
< 100ns). It has half the recovery time of
rr
ultrafast diodes and is of silicon nitride passivated
ion-implanted epitaxial planar construction.
This device is intended for use as a freewheeling/clamping
diode and rectifier in a variety of switching power supplies
and other powerswitchingapplications.Itslow stored charge
and hyperfast soft recovery minimize ringing and electrical
noise in many power switching circuits, thus reducing power
loss in the switching transistors.
Formerly developmental type TA49074.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRU150120 TO-218 RHR150120
NOTE: When ordering, use the entire part number.
File Number 4049.1
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . .<100ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplier
• Power Switching Circuits
• General Purpose
Packaging
SINGLE LEAD JEDEC STYLE TO-218
ANODE
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
TC = 37.5oC
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
CATHODE
(FLANGE)
RRM
RWM
F(AV)
FRM
FSM
STG
RHRU150120 UNITS
1200 V
1200 V
1200 V
150 A
300 A
1500 A
375 W
50 mJ
-65 to 175
AVL
, T
R
D
J
o
C
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RHRU150120
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 150A - - 3.2 V
IF = 150A, TC = 150oC - - 2.6 V
I
R
VR = 1200V - - 250 µA
VR = 1200V, TC = 150oC - - 3.0 mA
t
rr
IF = 1A, dIF/dt = 200A/µs - - 100 ns
IF = 150A, dIF/dt = 200A/µs - - 125 ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 150A, dIF/dt = 200A/µs - 70 - ns
IF = 150A, dIF/dt = 200A/µs - 40 - ns
IF = 150A, dIF/dt = 200A/µs - 460 - nC
VR = 10V, IF= 0A - 420 - pF
- - 0.4
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 9), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 9).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = Pulse width.
D = Duty cycle.
o
C/W
Typical Performance Curves
500
100
175oC
10
, FORWARD CURRENT (A)
F
I
1
0 0.5 1 21.5
100oC
VF, FORWARD VOLTAGE (V)
25oC
2.5
3 3.5
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2000
1000
100
10
1.0
, REVERSE CURRENT (µA)
0.1
R
I
0.01
0 1200800600400
175oC
100oC
25oC
200 1000
VR, REVERSE VOLTAGE (V)
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Typical Performance Curves (Continued)
RHRU150120
125
100
75
50
t, RECOVERY TIMES (ns)
25
0
TC = 25oC, dIF/dt = 200A/µs
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
50
150110
250
TC = 100oC, dIF/dt = 200A/µs
200
150
100
t, RECOVERY TIMES (ns)
50
0
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT
400
300
200
100
t, RECOVERY TIMES (ns)
0
TC = 175oC, dIF/dt = 200A/µs
t
rr
t
a
t
b
IF, FORWARD CURRENT (A)
15011050
150
125
100
75
50
25
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
SQ. WAVE
50 100 15025 175125
DC
75
T
, CASE TEMPERATURE (oC)
C
15011050
FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
1500
1200
900
600
300
, JUNCTION CAPACITANCE (pF)
J
C
0
0 50 100 150 200
VR, REVERSE VOLTAGE (V)
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
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Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
I
MAX
L = 40mH
R < 0.1Ω
E
Q
1 ANDt2
= 1.6A
= 1/2LI2 [V
AVL
= IGBT (BV
1
CONTROL I
t
1
CES
F
R
t
2
FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS
/(V
R(AVL)
R(AVL)
> DUT V
R(AVL)
L
DUT
G
IGBT
- VDD)]
)
CURRENT
SENSE
LR
RHRU150120
+
V
DD
-
dI
F
I
F
dt
0
V
t
a
AVL
t
rr
t
b
0.25 I
RM
I
RM
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
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