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RHRD4120, RHRD4120S
Data Sheet January 2000
4A, 1200V Hyperfast Diodes
The RHRD4120 and RHRD4120S are hyperfastdiodeswith
soft recovery characteristics (t
< 60ns). They have half the
rr
recovery time of ultrafast diodes and are silicon nitride
passivated ion-implanted epitaxial planar construction.
These devicesareintended for use as freewheeling/clamping
diodes and rectifiers in a variety of switching power supplies
and other power switching applications. Their low stored
charge and hyperfast soft reco very minimize ringing and
electrical noise in many power switching circuits, reducing
power loss in the switching transistors
Formerly development type TA49056.
Ordering Information
PART NUMBER PACKAGE BRAND
RHRD4120 TO-251 HR4120
RHRD4120S TO-252 HR4120
NOTE: Whenordering, use the entire part number. Add the suffix9A
to obtain the TO-252AA variant in the tape and reel, i.e.,
RHRD4120S9A.
File Number 3626.4
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . .<60ns
• Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175
o
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
• Avalanche Energy Rated
• Planar Construction
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Packaging
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE
(FLANGE)
C
Symbol
K
A
Absolute Maximum Ratings T
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(TC = 147.5oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Avalanche Energy (See Figures 9 and 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Lead Temperature for Soldering
(Leads at 0.063 in. (1.6mm) from case for 10s). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
= 25oC, Unless Otherwise Specified
C
JEDEC STYLE TO-252
CATHODE
ANODE
RRM
RWM
F(AV)
FRM
FSM
STG
PKG
CATHODE
(FLANGE)
RHRD4120, RHRD4120S UNITS
1200 V
1200 V
1200 V
4A
8A
40 A
50 W
10 mJ
-65 to 175
300
260
AVL
, T
R
D
J
L
o
C
o
C
o
C
1
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
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RHRD4120, RHRD4120S
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
SYMBOL TEST CONDITION MIN TYP MAX UNITS
V
F
IF = 4A - - 3.2 V
IF = 4A, TC = 150oC - - 2.6 V
I
R
VR = 1200V - - 100 µA
VR = 1200V, TC = 150oC - - 500 µA
t
rr
IF = 1A, dIF/dt = 100A/µs--60ns
IF = 4A, dIF/dt = 100A/µs--70ns
t
a
t
b
Q
RR
C
J
R
θJC
IF = 4A, dIF/dt = 100A/µs - 40 - ns
IF = 4A, dIF/dt = 100A/µs - 25 - ns
IF = 4A, dIF/dt = 100A/µs - 140 - nC
VR = 10V, IF = 0A - 15 - pF
--3oC/W
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300µs, D = 2%).
IR = Instantaneous reverse current.
trr = Reverse recovery time (See Figure 8), summation of ta + tb.
ta = Time to reach peak reverse current (See Figure 8).
tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 8).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
R
= Thermal resistance junction to case.
θJC
pw = pulse width.
D = duty cycle.
Typical Performance Curves
20
10
100oC
, FORWARD CURRENT (A)
F
1
I
0.5
0 0.5 1 1.5 2 2.5 3
VF, FORWARD VOLTAGE (V)
175oC
25oC
3.5 4.54
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
100
10
1
0.1
0.01
, REVERSE CURRENT (µA)
R
I
0.001
0 400 800 1200600 1000
200
VR, REVERSE VOLTAGE (V)
175oC
100oC
25oC
2
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RHRD4120, RHRD4120S
Typical Performance Curves (Continued)
75
60
45
30
15
t, RECOVERY TIMES (ns)
0
0.5
TC =25oC, dIF/dt = 100A/µs
t
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
4
100
TC = 100oC, dIF/dt = 100A/µs
80
60
40
t, RECOVERY TIMES (ns)
20
0
0.5
t
rr
t
a
IF, FORWARD CURRENT (A)
t
b
FIGURE 3. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 4. trr,taAND tbCURVES vs FORWARD CURRENT
125
TC = 175oC, dIF/dt = 100A/µs
100
75
50
t, RECOVERY TIMES (ns)
25
0
0.5
t
rr
t
a
t
b
1
IF, FORWARD CURRENT (A)
4
5
4
DC
3
2
1
, AVERAGE FORWARD CURRENT (A)
F(AV)
I
0
125 135 155 175165
SQ. WAVE
145
T
, CASE TEMPERATURE (oC)
C
41
FIGURE 5. trr,taAND tbCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t
V
GE
1 ANDt2
CONTROL I
t
1
F
R
t
2
FIGURE 7. trr TEST CIRCUIT FIGURE 8. trr WAVEFORMS AND DEFINITIONS
L
DUT
CURRENT
G
IGBT
SENSE
+
V
DD
-
0
dI
F
I
F
dt
t
rr
t
a
t
b
3
0.25 I
I
RM
RM
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RHRD4120, RHRD4120S
Test Circuits and Waveforms (Continued)
I
= 1A
MAX
L = 20mH
R < 0.1Ω
E
AVL
= IGBT (BV
Q
1
= 1/2LI2 [V
R(AVL)
CES
/(V
> DUT V
R(AVL)
R(AVL)
- VDD)]
)
LR
V
AVL
CURRENT
Q
1
SENSE
DUT
+
V
DD
V
DD
-
IV
t
0
I
L
I
L
t
1
t
2
FIGURE 9. AVALANCHE ENERGY TEST CIRCUIT FIGURE 10. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
t
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reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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