Datasheet RHP030N03 Datasheet (ROHM)

RHP030N03

Transistors

4V Drive Nch MOSFET

RHP030N03

zStructure zDimensions (Unit : mm)
Silicon N-channel MOSFET

zFeatures

1) Low On-resistance.

2) 4V drive.

zApplications

Switching

zPackaging specifications zInner circuit

Type

RHP030N03

Package
Code
Basic ordering unit (pieces)

Taping

T100
1000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Drain-source voltage
Gate-source voltage

Drain current

Reverse drain current

Continuous
Pulsed
Continuous

Pulsed
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40×40×0.7mm ceramic board

Symbol

DSS
GSS

D
DP
DR

DRP

P

D

∗1

∗1

Limits Unit

30

±20

3

10

3

10

500

150

−55 to +150

zThermal resistance

Parameter

Channel to ambient

∗ When mounted on a 40×40×0.7mm ceramic board

Symbol Limits Unit

Rth(ch-a)

250

62.5

MPT3

(1)Gate
(2)Drain
(3)Source

4.5

1.6

(1)

(3)(2)

0.5

1.51.5

3.0

Abbreviated symbol : KZ

(2)

∗1

ESD PROTECTION DIODE

∗2

BODY DIODE

1.5

0.5

2.5

4.0

0.4

1.0

0.40.4

(3)

∗2

(1)

∗1

(1)

(2)
(3)

Source
Gate
Drain

VV
VV
AI
AI
AI
AI

mW

∗2

W2

°CTch
°CTstg

∗

°C/W
°C/W

Rev.A 1/3

Transistors

zElectrical characteristics (T a=25°C)

Parameter Symbol
Gate-source leakage

Drain-source breakdown voltage
Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state
resistance

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge

Gate-source charge
Gate-drain charge

∗Pulsed

I

V

(BR) DSS

I

V

GS (th)

R

DS (on)

C

C
C

t

d (on)

t

d (off)

Q

Q

GSS

DSS

Y

t

t

Q

fs

iss
oss
rss

r

f

g
gs
gd

Min.−Typ. Max.

Unit

− ±10 µAVGS=±20V, VDS=0V

30 −−VID= 1mA, VGS=0V

−−1 µAV

1.0 − 2.5 V V

− 90 120 I

∗

− 160 210 mΩmΩI

∗

2.0 −−SV

− 160 − pF V

− 9027− pF V

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−

∗

−−nC I

− pF f=1MHz

7

− ns

11

− ns

15

− ns

4.5

− ns

6.5

− nC

1.0

− nC V

1.5

= 30V, VGS=0V

DS

= 10V, ID= 1mA

DS

= 3A, VGS= 10V

D

= 3A, VGS= 4V

D

= 10V, ID= 3A

DS

= 10V

DS

=0V

GS

V

DD

15
ID= 1.5A
V

GS

= 10V

R

L

=10Ω

R

G

=10Ω

15V

V

DD

= 10V

GS

= 3A

D

RHP030N03

Conditions

V

Rev.A 2/3

Transistors

zElectrical characteristics curves

1000

100

10

CAPACITANCE : C (pF)

Ta=25°C
f=1MHz
VGS=0V

Ciss

Coss

Crss

1000

100

10

SWITCHING TIME : t (ns)

Ta=25°C
V

DD

= 15V

V

GS

= 10V

G

=10Ω

R
Pulsed

tf
td (off)

td (on)
tr

10

VDS=10V
Pulsed

(A)

D

1

0.1

DRAIN CURRENT : I

RHP030N03

Ta=125°C

75°C
25°C

−25°C

1

0.01 0.1 1 10010

DRAIN-SOURCE VOLTAGE : VDS (V)

Fig.1 Typical Capacitance

vs. Drain-Source Voltage

0.5

(Ω)

0.4

DS (on)

R

0.3

1.5A

0.2

0.1

0

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0246 810 1412

ID=3.0A

GATE-SOURCE VOLTAGE : V

Ta=25°C
Pulsed

Fig.4 Static Drain-Source

On-State Resistance vs.
Gate-Source Voltage

1

(Ω)

DS (on)

R

Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C

0.1

(V)

GS

VGS=10V
Pulsed

1

0.01

0.1 1 10

DRAIN CURRENT : ID (A)

Fig.2 Switching Characteristics

10

(A)

DR

1

Ta=125°C

0.1

Ta= −25°C

0.01

REVERSE DRAIN CURRENT : I

0.001
0 0.2 0.4 0.6 0.8 1 1.2 1.4

SOURCE-DRAIN VOLTAGE : V

Fig.5 Reverse Drain Current vs.

Ta=75°C
Ta=25°C

Source-Drain Voltage ( Ι )

1

(Ω)

DS (on)

R

0.1

Ta=125°C

Ta=75°C
Ta=25°C

Ta= −25°C

VGS=0V
Pulsed

SD

VGS=4V
Pulsed

0.01
0

1.50.5 1 2 2.5 3 3.5

GATE-SOURCE VOLTAGE : VGS (V)

Fig.3 Typical Transfer Characteristics

10

(A)

DR

1

VGS=10V

0.1

0.01

REVERSE DRAIN CURRENT : I

0.001
0 0.2 0.4 0.6 0.8 1 1.2

(V)

SOURCE-DRAIN VOLTAGE : V

Ta=
Pulsed

0V

SD

25°C

(V)

Fig.6 Reverse Drain Current vs.

(V)

(th)
GS

Source-Drain Voltage ( ΙΙ )

2.5

2

1.5

1

0.5

VSD=10V

D

=1mA

I
Pulsed

0.01

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0.01 0.1 1 10

DRAIN CURRENT : I

Fig.7 Static Drain-Source

On-State Resistance
vs. Drain Current ( Ι )

0.01

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE :

0.01 0.1 1 10

(A)

D

DRAIN CURRENT : I

(A)

D

Fig.8 Static Drain-Source

On-State Resistance
vs. Drain Current ( ΙΙ )

0

GATE THRESHOLD VOLTAGE : V

-50 -25 0 25 50 75 100 125 150

CHANNEL TEMPERATURE : Tch (°C)

Fig.9 Gate Threshold Voltage vs.
Channel Temperature

Rev.A 3/3

Appendix

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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

Notes

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1