The RH27C combines very low noise with excellent precision and high speed specifications. The low 1/f noise
corner frequency of 2.7Hz combined with 3.5nV√Hz 10Hz
noise and low offset voltage make the RH27C an excellent
choice for low frequency military instrumentation applications. The wafer lots are processed to LTC’s in-house
Class S flow to yield circuits usable in stringent military
applications.
For complete electrical specifications and performance
curves see the OP-27/OP-37 data sheet.
U U
BUR -I CIRCUIT
200Ω
10k
10k
20V
–
2
3
7
6
OR
+
4
–20V
20V
7
–
2
3
+
8
4
–20V
A
W
O
LUTEXI T
S
A
WUW
ARB
U
G
I
S
Supply Voltage ..................................................... ±22V
Internal Power Dissipation................................ 500mW
Input Voltage ........................... Equal to Supply Voltage
Rejection Ratio
Large-Signal Voltage GainRL ≥ 2k, VO = ±10V700700700700400V/mV
Maximum OutputRL ≥ 10k±11.5±11.5±11.5±11.5±11.5V
Voltage SwingRL ≥ 600Ω±10.0±10.0±10.0±10.0±10.0V
Open-Loop Output Resistance VO = 0, IO = 070 (Typ)70 (Typ)70 (Typ)70 (Typ)70 (Typ)Ω
Power Dissipation170170170170170mW
(Postirradiation) (Note 10)
100KRAD(Si)50KRAD(Si)20KRAD(Si)
200KRAD(Si)
2
Page 3
TABLE 1A: ELECTRICAL CHARACTERISTICS
RH27C
Note 1: Input offset voltage measurements are performed by automatic
test equipment approximately 0.5 seconds after application of power.
Note 2: Long-term input offset voltage stability refers to the averaged
trend line of offset voltage vs time over extended periods after the first 30
days of operation. Excluding the initial hour of operation, changes in V
OS
during the first 30 days are typically 2.5µV. Refer to the typical
performance curve.
Note 3: Sample tested to an LTPD of 15 on every lot. Contact factory for
100% testing of 10Hz voltage density noise.
Note 4: Parameter is guaranteed by design, characterization, or correlation
to other tested parameters.
Note 5: See test circuit and frequency response curve for 0.1Hz to 10Hz
tester on OP-27/OP-37 data sheet.
TOTAL DOSE BIAS CIRCUIT
15V
–
10k
8V
+
Note 6: See test circuit for current noise measurement on OP-27/OP-37
data sheet.
Note 7: The average input offset drift performance is within the specifications unnulled or when nulled with a pot having a range 8kΩ to 20kΩ.
Note 8: The RH27C’s inputs are protected by back-to-back diodes. Current
limiting resistors are not used in order to achieve low noise. If differential
input voltage exceeds ±0.7V, the input current should be limited to 25mA.
Note 9: V
= ±15V, VCM = 0V unless otherwise noted.
S
Note 10: TA = 25°C, VS = ±15V, VCM = 0V, unless otherwise noted.
10k
–1µF
–15V
–1µF
WU
TYPICAL PERFOR A CE CHARACTERISTICS
Positive Slew Rate
4
= 15V
V
S
= 2k
R
L
3
2
1
POSITIVE SLEW RATE (V/µs)
0
1
10
TOTAL DOSE KRAD (Si)
1001000
RH27C • TPC01
4
3
2
1
NEGATIVE SLEW RATE (V/µs)
0
Negative Slew Rate
= 15V
V
S
= 2k
R
L
1
10
TOTAL DOSE KRAD (Si)
1001000
RH27C • TPC02
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
3
Page 4
RH27C
TOTAL DOSE KRAD (Si)
1
200
250
350
100
RH27C • TPC05
150
100
101000
50
0
300
INPUT BIAS CURRENT (nA)
VS = ±15V
V
CM
= 0V
WU
TYPICAL PERFOR A CE CHARACTERISTICS
Input Offset VoltageInput Bias Current
150
VS = ±15V
= 0V
V
CM
100
50
0
–50
–100
INPUT OFFSET VOLTAGE (µV)
–150
–200
1
101000
TOTAL DOSE KRAD (Si)
100
RH27C • TPC03
Common Mode Rejection RatioInput Offset Current
170
VS = ±15V
= ±11V
V
CM
160
150
140
130
120
110
COMMON MODE REJECTION RATIO (dB)
100
1
101000
TOTAL DOSE KRAD (Si)
100
RH27C • TPC06
Open-Loop Gain
170
VS = ±15V
= 2k
R
L
160
150
140
130
120
OPEN-LOOP GAIN (dB)
110
100
75
50
25
INPUT OFFSET CURRENT (nA)
–25
–50
1
0
1
= ±10V
V
OUT
TOTAL DOSE KRAD (Si)
VS = ±15V
= 0V
V
CM
TOTAL DOSE KRAD (Si)
101000
10
100
100
RH27C • TPC04
RH27C • TPC07
1000
Power Supply Rejection Ratio
140
130
120
110
100
90
80
POWER SUPPLY REJECTION RATIO (dB)
70
1
VS = ±4V TO ±18V
101000
TOTAL DOSE KRAD (Si)
100
RH27C • TPC08
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTSSUBGROUP
Final Electrical Test Requirements (Method 5004)1*,2,3,4,5,6,7
Group A Test Requirements (Method 5005)1,2,3,4,5,6,7
Group B and D for Class S, and1
Group C and D for Class B
End Point Electrical Parameters (Method 5005)
The PDA is specified as 5% based on failures from group A, subgroup 1,
tests after cooldown as the final electrical test in accordance with method
5004 of MIL-STD-883 Class B. The verified failures of group A, subgroup
1, after burn-in divided by the total number of devices submitted for burnin in that lot shall be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits
than those given.
I.D. No. 66-10-0155 Rev. C 0398
rh27cc LT/HP 0398 100 REV C • PRINTED IN USA
LINEAR TECHNOLOGY CORPORATION 1993
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