The RH1078M is a micropower dual op amp in the
standard 8-pin configuration. This device is optimized for
single supply operation at 5V. Specifications for ±15V are
also provided.
The wafer lots are processed to LTC’s in-house Class S
flow to yield circuits usable in stringent military applications.
U
U
BUR -I CIRCUIT
(Each Amplifier)
50k
20V
–
W
O
A
Supply Voltage ..................................................... ±22V
Differential Input Voltage ...................................... ±30V
Input Voltage ...............Equal to Positive Supply Voltage
...............................0.5V Below Negative Supply Voltage
Rejection Ratio
Large-Signal Voltage GainVO = ±10V, RL = 50k10001V/mV
Output Voltage SwingRL = 50k±134V
Supply CurrentPer Amplifier10011252, 3µA
= 13V, –14.9V902, 3dB
CM
= ±10V, RL = 2k3001V/mV
V
O
VO = ±10V, RL = 5k1502, 3V/mV
= 2k±114V
R
L
= 5k±115, 6V
R
L
–55°C ≤ TA ≤ 125°C
Note 1: All noise parameters are for VS = ±2.5V, VO = 0V.
Note 2: This parameter is guaranteed by design, characterization or
correlation to other tested parameters.
Note 3: Power supply rejection ratio is measured at the minimum supply
voltage. The op amps actually work at 1.8V supply but with a typical offset
skew of –300µV.
Rejection Ratio
Large-SignalVO = 10V, RL = 50k100070040015050V/mV
Voltage GainV
Output VoltageRL = 50k±13±13±13±13±13V
SwingR
Supply Currentper Amplifier100100100100100µA
= 10V, RL = 2k3002001204515V/mV
O
= 2k±11±11±11±11±10V
L
75KRAD(Si)50KRAD(Si)
100KRAD(Si)
5
Page 6
RH1078M
TOTAL DOSE-KRADs (Si)
1
110
COMMON-MODE REJECTION RATIO (dB)
120
130
101001000
1078M • G4
100
90
U
W
TABLE 2: ELECTRICAL TEST REQUIRE E TS
MIL-STD-883 TEST REQUIREMENTSSUBGROUP
Final Electrical Test Requirements (Method 5004)1*,2,3,4,5,6
Group A Test Requirements (Method 5005)1,2,3,4,5,6
Group C and D End Point Electrical Parameters1,2,3
(Method 5005)
* PDA Applies to subgroup 1. See PDA Test Notes.
U
TYPICAL APPLICATIONS
Input Offset Voltage
1000
750
500
250
0
–250
–500
INPUT OFFSET VOLTAGE (µV)
–750
PDA Test Notes
The PDA is specified as 5% based on failures from group A, subgroup 1, tests
after cooldown as the final electrical test in accordance with method 5004 of
MIL-STD-883 Class B. The verified failures of group A, subgroup 1, after burnin divided by the total number of devices submitted for burn-in in that lot shall
be used to determine the percent for the lot.
Linear Technology Corporation reserves the right to test to tighter limits than
those given.
Input Offset Current
20
15
10
5
0
–5
–10
INPUT OFFSET CURRENT (nA)
–15
–1000
1
101001000
TOTAL DOSE-KRADs (Si)
Input Bias Current
0
–20
–40
–60
–80
–100
–120
INPUT BIAS CURRENT (nA)
–140
–160
1
101001000
TOTAL DOSE-KRADs (Si)
1078M • G1
1078M • G3
–20
1
101001000
TOTAL DOSE-KRADs (Si)
Common-Mode Rejection Ratio
1078M • G2
6
Page 7
TOTAL DOSE-KRADs (Si)
1
110
LARGE-SIGNAL VOLTAGE GAIN (dB)
130
150
101001000
1078M • G6
90
100
120
140
80
70
VS = ±15V
V
O
= ±10V
R
L
= 2k
V
S
= 5V, 0V
V
O
= 0.03V TO 3.5V
R
L
= 50k
U
TYPICAL APPLICATIONS
RH1078M
Power Supply Rejection Ratio
140
130
120
110
100
90
80
70
POWER SUPPLY REJECTION RATIO (dB)
60
1
101001000
TOTAL DOSE-KRADs (Si)
Slew Rate
0.16
0.14
SLEW RATE (V/µs)
0.12
0.10
0.08
0.06
0.04
0.02
VS = 5V, 0V
0
1
101001000
TOTAL DOSE-KRADs (Si)
VS = ±15V
1078M • G5
1078M • G7
Large-Signal Voltage Gain
Gain-Bandwidth Product
400
VS = ±15V
350
300
250
200
150
100
GAIN-BANDWIDTH PRODUCT (kHz)
50
0
1
101001000
TOTAL DOSE-KRADs (Si)
1078M • G8
160
140
120
100
10Hz NOISE DENSITY (nV/√Hz)
10Hz Noise Density
VS = ±15V
80
60
40
20
0
1
101001000
TOTAL DOSE-KRADs (Si)
Positive Output Voltage Swing
16
VS = ±15V
14
12
10
8
6
4
2
POSITIVE OUTPUT VOLTAGE SWING (V)
0
1
1078M • G9
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.