Page 1
RGF1A - RGF1M
Features
Glass passivated junction.
•
• For surface mounted application.
• Low forward voltage drop.
• High current capability.
• Easy pick and place.
• High surge current capability.
3.93
3.73
1.67
1.47
+
2.38
2.18
5.49
5.29
Minimum Recommende d
Land Pattern
1.0 Ampere Fast Recovery Rectifiers
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.062 (1.575)
0.055 (1.397)
0.060 (1.524)
0.030 (0.762)
RGF1A-RGF1M
0.181 (4.597)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
0.008 (0.203)
0.002 (0.051)
0.114 (2.896)
1
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* T
= 25°C unless otherwise noted
A
Symbol Parameter Value Units
I
O
i
f(surge)
P
D
R
θ
JA
R
θ
JL
T
stg
T
J
Average Rectified Current
= 125°C
@ T
L
Peak Forward Surge Current
8.3 ms single half -sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient ** 85
Thermal Resistance, J unction to Lead** 28
Storage Temperature Range -65 to +175
Operating Junction Temperature -65 to +175
1.0 A
30 A
1.76
11.7
mW/°C
°
°
W
C/W
C/W
°
C
°
C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics T
= 25°C unless otherwise noted
A
Parameter Device Units
1A 1B 1D 1G 1J 1K 1M
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Maximum Reverse Current
@ rated V
R
TA = 25°C
= 125°C
T
A
Maximum Forward Voltage @ 1.0 A
Maximum Reverse Recovery Time
I
= 0.5 A, IR = 1.0 A, I
F
= 0.25 A
rr
Typical Junction Capacitance
V
= 4.0 V, f = 1.0 MHz
R
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
5.0
100
1.3 V
150 250 500 nS
8.5 pF
A
µ
A
µ
1998 Fairchild Semiconductor International
RGF1A-RGF1M, Rev. E
Page 2
T ypical Characteristics
RGF1A-RGF1M
Fast Recovery Rectifiers
(continued)
Forward Current Deratin g Curve
1.25
1
0.75
RESISTIVE OR
INDUCTIVE LOAD
0.5
P.C . B. M O UN T E D
ON 0. 2 x 0. 2"
(5. 0 x 5.0 mm)
0.25
COPPER PAD AREAS
FORWAR D CURRENT (A)
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE ( C)
º
Forward Charact eristics
20
10
T = 125 C
º
A
1
T = 25 C
º
0.1
FORWAR D CU RRENT (A)
0.01
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
FORWAR D VO LTA GE (V)
A
Pulse Width = 300µs
2% Duty Cycle
Non-Repetitive Surge Curre nt
50
40
30
20
10
0
PEAK FORWARD SURGE CURRENT (A)
12 51020 50100
NUMBE R OF CY CL E S AT 60Hz
Reverse Characteris tics
30
10
µ
1
0.1
REVERSE CURRENT ( A)
0.01
0 20406080100120140
PERCENT OF RATED PEA K REVERSE VOL TAGE (%)
T = 150 C
º
A
T = 100 C
º
A
º
T = 25 C
A
Junction Capacitance
50
20
10
5
CAPACITAN CE (p F)
2
1
12 51020 50100
REVERSE VOLTAGE (V)
RGF1A-RGF1M, Rev. E
Page 3
SMA/DO-214AC Package Dimensions
SMA/DO-214AC (FS PKG Code P5)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.064
0.062 (1.575)
0.055 (1.397)
0.060 (1.524)
0.030 (0.762)
0.181 (4.597)
0.157 (3.988)
2
0.208 (5.283)
0.188 (4.775)
0.008 (0.203)
0.002 (0.051)
0.114 (2.896)
1
0.098 (2.489)
0.096 (2.438)
0.078 (1.981)
0.012 (0.305)
0.006 (0.152)
1.67
1.47
Minimum Recommended
3.93
3.73
+
2.38
2.18
5.49
5.29
Land Pattern
August 1999, Rev. A
Page 4
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failure to perform when properly used in accordance
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PRODUCT STA TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
Formative or
In Design
First Production
Full Production
Not In Production
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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