Datasheet RFP8P10 Datasheet (Intersil)

RFP8P10

July 1999 File Number 1496.2Data Sheet

8A, 100V, 0.400 Ohm, P-Channel Power
MOSFET

This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17511.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP8P10 TO-220AB RFP8P10

NOTE: When ordering, include the entire part number.

Packaging

TO-220AB

Features

• 8A, 100V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.400Ω

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

GATE

4-165

DRAIN
(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999.

RFP8P10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP8P10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

D

DM

GS

-100 V

-100 V
8A

20 A

±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300

260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

DSSID

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= -250µA, VGS = 0 -100 V

= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V TJ= 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0 - - ±100 nA

= 8A, VGS = -10V (Figures 6, 7) - - 0.400 Ω
= 8A, VGS = -10V - - 3.2 V

≈ 4A, V

RL= 12Ω,
(Figure 10)

= 50V, RG= 50Ω, VGS = -10V

DD

-1860 ns

- 70 150 ns

- 166 275 ns

- 94 175 ns

VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)

- - 1500 pF

- - 700 pF

- - 300 pF

RFP8P10 - - 1.67

o

C/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%

3. Repetitive rating: pulse width is limited by maximum junction temperature.

4-166

ISD = -4A - - -1.4 V

SD

ISD = -4A, dlSD/dt = -100A/µs - 200 - ns

rr

Typical Performance Curves

RFP8P10

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

TC, CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWERDISSIPATION vsCASE

TEMPERATURE

100

TJ= MAX RATED

= 25oC

T

C

ID MAX CONTINUOUS

10

DC

1

OPERATION IN THIS AREA

, DRAIN CURRENT (A)

D

I

MAY BE LIMITED BY r

0.1

-1 -10 -100 -1000
VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

24

PULSE DURATION = 80µs
DUTY CYCLE =0.5% MAX

20

T

= 25oC

C

VGS = -20V

16

VGS = -10V

12

VGS = -9V

8

DRAIN CURRENT (A)

D,

I

4

0

-1 -3 -5 -7

0-2-4

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = -8V

VGS = -7V

VGS = -6V

VGS = -5V

VGS = -4V

VGS = -3V

-6

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

24

VDS= 10V
PULSE DURATION = 80µs

20

DUTY CYCLE =0.5% MAX

16

12

8

DRAIN TO SOURCE CURRENT (A)

4

125oC

DS(ON),

0

I

-1 -4 -6 -7

-3 -5 -8-2

V

GATE TO SOURCE VOLTAGE (V)

GS,

-40oC

-40oC

25oC

125oC

0.4
VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE =0.5% MAX

0.3

0.2

DRAIN TO SOURCE ON

RESISTANCE (Ω)

0.1

DS(ON),

r

0

02 8 12 20

4 6 10 14

ID,DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

4-167

125oC

25oC

-40oC

1816

RFP8P10

Typical Performance Curves

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID= 8A, VGS = 10V

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50

0

T

JUNCTION TEMPERATURE (oC)

J,

50 100 150

(Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

2400

2000

1600

1200

800

C, CAPACITANCE (pF)

400

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

ISS

C

OSS

C

RSS

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

1.4
ID= 250µA

VDS = V

GS

1.2

1.0

0.8

0.6

NORMALIZED GATE THRESHOLD VOLTAGE

-50 0 50 100
T

JUNCTION TEMPERATURE (oC)

J,

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs

JUNCTION TEMPERATURE

100

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

GATE

VDD= BV

IG(REF)

20 80

(ACT)

I

G

SOURCE

DSS

VOLTAGE

RL = 12.5Ω

I

(REF) = 0.92mA

G

V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

DRAIN SOURCE

t, TIME (ms)

= -10V

0.75BV

0.50BV

0.25BV

VOLTAGE

VDD= V

DSS
DSS
DSS

DSS

IG(REF)

(ACT)

I

G

10

8

6

4

2

0

NOTE: Refer to Intersil Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

150

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuits and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

4-168

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

90%

t

f

10%

RFP8P10

Test Circuits and Waveforms

CURRENT

REGULATOR

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

(Continued)

-V

DS

(ISOLATED
SUPPLY)

DUT

D

DUT

S

CURRENT

I

D

SAMPLING

+V

DS

0

V

DS

Q

gs

V

DD

0

I

G(REF)

Q

gd

Q

g(TOT)

V

GS

FIGURE 14. GATE CHARGE WAVEFORMS

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