Page 1
RFP8P10
July 1999 File Number 1496.2Data Sheet
8A, 100V, 0.400 Ohm, P-Channel Power
MOSFET
This P-Channel enhancement mode silicon gate power field
effect transistor is designed for applications such as
switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17511.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP8P10 TO-220AB RFP8P10
NOTE: When ordering, include the entire part number.
Packaging
TO-220AB
Features
• 8A, 100V
•r
DS(ON)
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 0.400Ω
Components to PC Boards”
Symbol
D
G
S
SOURCE
DRAIN
GATE
4-165
DRAIN
(FLANGE)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999.
Page 2
RFP8P10
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP8P10 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
D
DM
GS
-100 V
-100 V
8A
20 A
±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 W
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
GS(TH)VGS
Zero Gate Voltage Drain Current I
Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R
DSSID
DSS
GSS
r
f
ISS
OSS
RSS
JC
θ
= -250µA, VGS = 0 -100 V
= VDS, ID = -250µA -2 - -4 V
VDS = Rated BV
VDS= 0.8 x Rated BV
, VGS = 0V - - 1 µA
DSS
, VGS = 0V TJ= 125oC- - 25 µA
DSS
VGS = ±20V, VDS = 0 - - ±100 nA
= 8A, VGS = -10V (Figures 6, 7) - - 0.400 Ω
= 8A, VGS = -10V - - 3.2 V
≈ 4A, V
RL= 12Ω,
(Figure 10)
= 50V, RG= 50Ω, VGS = -10V
DD
-1860 ns
- 70 150 ns
- 166 275 ns
- 94 175 ns
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
- - 1500 pF
- - 700 pF
- - 300 pF
RFP8P10 - - 1.67
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t
NOTES:
2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%
3. Repetitive rating: pulse width is limited by maximum junction temperature.
4-166
ISD = -4A - - -1.4 V
SD
ISD = -4A, dlSD/dt = -100A/µs - 200 - ns
rr
Page 3
Typical Performance Curves
RFP8P10
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 50 100 150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWERDISSIPATION vsCASE
TEMPERATURE
100
TJ= MAX RATED
= 25oC
T
C
ID MAX CONTINUOUS
10
DC
1
OPERATION IN THIS AREA
, DRAIN CURRENT (A)
D
I
MAY BE LIMITED BY r
0.1
-1 -10 -100 -1000
VDS, DRAIN TO SOURCE VOLTAGE (V)
DS(ON)
10
8
6
4
, DRAIN CURRENT (A)
D
I
2
0
25 50 75 100 125 150
, CASE TEMPERATURE (oC)
T
C
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
24
PULSE DURATION = 80µs
DUTY CYCLE =0.5% MAX
20
T
= 25oC
C
VGS = -20V
16
VGS = -10V
12
VGS = -9V
8
DRAIN CURRENT (A)
D,
I
4
0
-1 -3 -5 -7
0-2-4
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
VGS = -8V
VGS = -7V
VGS = -6V
VGS = -5V
VGS = -4V
VGS = -3V
-6
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
24
VDS= 10V
PULSE DURATION = 80µs
20
DUTY CYCLE =0.5% MAX
16
12
8
DRAIN TO SOURCE CURRENT (A)
4
125oC
DS(ON),
0
I
-1 -4 -6 -7
-3 -5 -8-2
V
GATE TO SOURCE VOLTAGE (V)
GS,
-40oC
-40oC
25oC
125oC
0.4
VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE =0.5% MAX
0.3
0.2
DRAIN TO SOURCE ON
RESISTANCE (Ω)
0.1
DS(ON),
r
0
02 8 12 20
4 6 10 14
ID,DRAIN CURRENT (A)
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
4-167
125oC
25oC
-40oC
1816
Page 4
RFP8P10
Typical Performance Curves
2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
ID= 8A, VGS = 10V
1.5
1.0
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
0
-50
0
T
JUNCTION TEMPERATURE (oC)
J,
50 100 150
(Continued)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2400
2000
1600
1200
800
C, CAPACITANCE (pF)
400
0
01020304050
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
VGS = 0V, f = 1MHz
= CGS + C
C
ISS
C
= C
RSS
OSS
GD
≈ CDS + C
C
ISS
C
OSS
C
RSS
C
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
GD
GD
1.4
ID= 250µA
VDS = V
GS
1.2
1.0
0.8
0.6
NORMALIZED GATE THRESHOLD VOLTAGE
-50 0 50 100
T
JUNCTION TEMPERATURE (oC)
J,
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
100
75
50
25
, DRAIN TO SOURCE VOLTAGE (V)
DS
V
0
GATE
VDD= BV
IG(REF)
20 80
(ACT)
I
G
SOURCE
DSS
VOLTAGE
RL = 12.5Ω
I
(REF) = 0.92mA
G
V
GS
0.75BV
DSS
0.50BV
DSS
0.25BV
DSS
DRAIN SOURCE
t, TIME (ms)
= -10V
0.75BV
0.50BV
0.25BV
VOLTAGE
VDD= V
DSS
DSS
DSS
DSS
IG(REF)
(ACT)
I
G
10
8
6
4
2
0
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
150
, GATE TO SOURCE VOLTAGE (V)
GS
V
Test Circuits and Waveforms
DUT
R
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
G
4-168
t
ON
t
d(ON)
t
R
L
-
V
DD
+
0
V
DS
V
GS
0
10%
r
10%
90%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
90%
t
f
10%
Page 5
RFP8P10
Test Circuits and Waveforms
CURRENT
REGULATOR
12V
BATTERY
0
0.2µF
50kΩ
I
G(REF)
0.3µF
G
IG CURRENT
SAMPLING
RESISTOR RESISTOR
FIGURE 13. GATE CHARGE TEST CIRCUIT
(Continued)
-V
DS
(ISOLATED
SUPPLY)
DUT
D
DUT
S
CURRENT
I
D
SAMPLING
+V
DS
0
V
DS
Q
gs
V
DD
0
I
G(REF)
Q
gd
Q
g(TOT)
V
GS
FIGURE 14. GATE CHARGE WAVEFORMS
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4-169
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