Datasheet RFP6P08, RFP6P10 Datasheet (Intersil)

RFP6P08, RFP6P10

Data Sheet October 1999

-6A, -80V and -100V, 0.600 Ohm,
P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors designed for high speed
applications such as switching regulators, switching
convertors, relay drivers, and drivers for high power bipolar
switching transistors.

Formerly developmental type TA09046.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP6P08 TO-220AB RFP6P08
RFP6P10 TO-220AB RFP6P10

NOTE: When ordering, include the entire part number.

File Number 1490.2

Features

• -6A, -80V and -100V

•r

DS(ON)

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.600Ω

Components to PC Boards”

Symbol

D

G

Packaging

JEDEC TO-220AB

DRAIN
(FLANGE)

SOURCE

DRAIN

GATE

S

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP6P08, RFP6P10

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP6P08 RFP6P10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DS

DGR

80 100 V
80 100 V

Continuous Drain Current

RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

66A

20 20 A

±20 ±20 V

60 60 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 0.48 W/oC

Operating and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 (for TO-220AB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFP6P08 -80 - - V
RFP6P10 -100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS

OSS

RSS

θJC

= VDS, ID = 250µA (Figure 7) -2 - -4 V

VDS = Rated BV

DSS

VDS = 0.8 x Rated BV

(TC = 125oC) - - 25 µA

DSS

--1µA

VGS = ±20V, VDS = 0V - - ±100 nA

= 6A, VGS = -10V (Figures 5, 6) - - 0.6 Ω
= 6A, VGS = -10V - - -3.6 V

VDD = 50V, I
RG = 50Ω, RL = 16Ω
VGS = -10V
(Figures 13, 14)

D

≈ 6A

-1160ns

- 48 100 ns

- 102 150 ns

- 70 100 ns

VDS = 25V
VGS = 0V
f = 1MHz
(Figure 8)

- - 800 pF

- - 350 pF

- - 150 pF

RFP6P08, RFP6P10 - - 2.083oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulse Test: Pulse Duration ≤ 300µs max, Duty Cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

2

ISD = -3A - - -1.4 V

SD

ISD = 4A, dlSD/dt = 50A/µs - 150 - ns

rr

Typical Performance Curves

RFP6P08, RFP6P10

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 50 100 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 1. NORMALIZED POWER DISSIPATIONvs CASE

TEMPERATURE

100

OPERATION IN THIS AREA
LIMITED BY r

10

ID MAX CONTINUOUS

DS(ON)

DC

TJ= MAX RATED
T

= 25oC

C

-8

-7

-6

-5

-4

-3

, DRAIN CURRENT (A)

-2

D

I

-1

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

30

PULSE DURATION = 80µs
T

= 25oC

C

25

20

15

VGS = -8V

VGS = -9V

VGS = -20V

VGS = -10V

1

, DRAIN CURRENT (A)

D

I

0.1

-1 -10 -100 -1000

V

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(MAX)

V

DS(MAX)

= -100V

RFP8P10

= -80V

RFP8P08

10

, DRAIN CURRENT (A)
I

VGS = -4V

D

5

0

024

1357

VDS, DRAIN TO SOURCE VOLTAGE (V)

6

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

16

VDS= 10V
PULSE DURATION = 80µs

14

12

10

8

6

4

, DRAIN TO SOURCE CURRENT (A)

2

DS(ON)

I

0

0-4-6-8

, GATE TO SOURCE VOLTAGE (V)

V

GS

TC = -40oC

TC = 25oC

TC = 125oC

-10-2

0.8
VGS = 10V

PULSE DURATION = 80µs

0.7

0.6

0.5

0.4

0.3

, DRAIN TO SOURCE

ON RESISTANCE

0.2

DS(ON)

r

0.1

0

02 8 12 20

4 6 10 14

ID, DRAIN CURRENT (A)

125oC

VGS = -7V

VGS = -6V

VGS = -5V

8910

25oC

-40oC

1816

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCEON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3

RFP6P08, RFP6P10

Typical Performance Curves (Continued)

3

= 6A

I

D

VGS = -10V

2

1

ON RESISTANCE

NORMALIZED DRAIN TO SOURCE

0

-50

0

T

J

50 100 150

, JUNCTION TEMPERATURE (oC)

FIGURE 7. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

800

700

600

C

500

ISS

400

300

200

C, CAPACITANCE (pF)

100

0

0 -10 -20 -30 -40 -50

C

C

OSS

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

= CGS + C

C
C
C

ISS
RSS
OSS

= C

≈ CDS + C

GD

GD

GD

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

200

1.5
I

= 250µA

D

VGS = -10V

1

0.5

NORMALIZED GATE

THRESHOLD VOLTAGE

0

-50 0 50 100
T

, JUNCTION TEMPERATURE (oC)

J

150

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

100

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

BV

DSS

VDD= BV

DSS

GATE

TO

SOURCE

VOLTAGE

R

= 16.67Ω

L

I

(REF) = 0.46mA

G

= -10V

V

GS

0.75BV

0.50BV

0.25BV

DSS
DSS
DSS

DRAIN TO SOURCE

VOLTAGE

IG(REF)

20 80

(ACT)

I

G

t, TIME (ms)

VDD= BV

IG(REF)

I

G

DSS

(ACT)

10

8

6

4

2

0

NOTE: Refer to Intersil Applications Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

200

, GATE TO SOURCE VOLTAGE (V)

GS

V

Test Circuits and Waveforms

V

DS

VARY t

TO OBTAIN

P

REQUIRED PEAK I

0V
V

GS

t

P

AS

L

R

G

-

V

DD

+

DUT

I

AS

0.01Ω

0

V

DD

I

AS

t

P

FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 12. UNCLAMPED ENERGY WAVEFORMS

4

BV

t

AV

DSS

V

DS

RFP6P08, RFP6P10

Test Circuits and Waveforms (Continued)

t

ON

t

d(ON)

t

R

L

DUT

R

V

GS

G

-

V

DD

+

0

V

DS

V

GS

0

r

10%

90%

10%

50%

PULSE WIDTH

FIGURE 13. SWITCHING TIME TEST CIRCUIT FIGURE 14. RESISTIVE SWITCHING WAVEFORMS

t

d(OFF)

90%

t

OFF

50%

90%

t

f

10%

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