Datasheet RF1S4N100SM, RFP4N100 Datasheet (Intersil)

RFP4N100, RF1S4N100SM

Data Sheet August 1999 File Number

4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.

Formerly developmental type TA09850.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP4N100 TO-220AB RFP4N100
RF1S4N100SM TO-263AB F1S4N100

NOTE: When ordering, use the entire part number.

Features

• 4.3A, 1000V

DS(ON)

= 3.500Ω

•r

• UIS Rating Curve (Single Pulse)

o

C to 150oC Operating Temperature

• -55

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Symbol

D

G

S

2457.4

Packaging

DRAIN (FLANGE)

JEDEC TO-220AB JEDEC TO-263AB

SOURCE

DRAIN

GATE

GATE

SOURCE

DRAIN

(FLANGE)

4-528

CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP4N100, RF1S4N100SM

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP4N100,

RF1S4N100SM UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E

DS

DM

GS
AS

D

(See UIS SOA Curve)

1000 V
1000 V

4.3 A
17 A

±20 V

mJ

(Figures 4, 14, 15)

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

150

1.2

-55 to 150

300
260

W

W/oC

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV
Gate Threshold Voltage V
Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge

Q

(Gate to Source + Gate to Drain)
Thermal Resistance Junction to Case R
Thermal Resistance Junction to Ambient R

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

DSSID

GS(TH)VGS

DSS

VDS = 1000V, VGS = 0V - - 25 µA
VDS = 800V, VGS = 0V, TC = 150oC - - 100 µA

GSS

DS(ON)ID

d(ON)

VGS = ±20V - - ±100 nA

VDD = 500V, I
RL = 120Ω)

r

d(OFF)

f

g(TOT)VGS

(Figure 13)

θJC

θJA

= 250µA, VGS = 0V (Figure 10) 1000 - - V

= VDS, ID = 250µA2-4V

= 2.5A, VGS = 10V (Figures 8, 9) - - 3.500 Ω

≈ 3.9A, R

D

GS

= 9.1Ω,

--30ns

--50ns

- - 170 ns

--50ns

= 20V, ID = 3.9A, VDS = 800V

- - 120 nC

- - 0.83

o

C/W

--62oC/W

Source to Drain Diode Voltage V
Reverse Recovery Time t

SD

ISD = 4.3A - - 1.8 V
ISD = 3.9A, dISD/dt = 100A/µs - - 1000 ns

rr

NOTES:

2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

4-529

RFP4N100, RF1S4N100SM

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

TC = 25oC, Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWERDISSIPATION vs AMBIENT

TEMPERATURE

100

RFP4N100, RF1S4N100SM

10

100µs

10µs

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

D

I

1.0

0.5
0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

100

IF R = 0
t

= (L)(Ias) / (1.3 x RATED BV

av

IF R ≠ 0

= (L/R) In ((Ias x R) / (1.3 x RATED BV

t

av

DSS

- VDD)

- VDD) + 1)

DSS

1

OPERATION IN THIS

, DRAIN CURRENT (A)

D

I

0.1

TC = 25oC
T

= MAX RATED

J

SINGLE PULSE

0.01

110

AREA MAY BE LIMITED
BY r

DS(ON)

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

1ms

10ms

DC

100 1000

Idm

10

, AVALANCHECURRENT (A)

AS

I

1

0.01 0.10 1 10
tAV, TIME IN AVALANCHE (ms)

STARTING TJ = 25oC
STARTING T

= 150oC

J

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA

10

VGS = 10V

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 100 200 300 400 500

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

VGS = 6V

VGS = 5V

VGS = 4V

10

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0 1020304050

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 6V

VGS = 5V

VGS = 4V

FIGURE 5. OUTPUT CHARACTERISTICS FIGURE 6. SATURATION CHARACTERISTICS

4-530

RFP4N100, RF1S4N100SM

Typical Performance Curves

5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DS

4

3

2

150oC 25oC

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

02 46 8

, GATE TO SOURCE VOLTAGE (V)

V

GS

TC = 25oC, Unless Otherwise Specified (Continued)

FIGURE 7. TRANSFER CHARACTERISTICS FIGURE 8. DRAIN TOSOURCEON RESISTANCE vs DRAIN

3.0
VGS = 10V, ID = 4.3A

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.5

6

VGS = 10V
PULSE DURATION = 80µs

5

DUTY CYCLE = 0.5% MAX

4

3

, DRAIN TO SOURCE

2

ON RESISTANCE (Ω)

DS(ON)

r

1

0

024681012

I

, DRAIN CURRENT (A)

D

CURRENT

1.3
ID = 250µA

1.2

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-50 0 50
, JUNCTION TEMPERATURE (oC)

T

J

100

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

3000

2500

C

2000

1500

1000

C, CAPACITANCE (pF)

500

0

1 10 100

ISS

C

OSS

C

RSS

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS

C

OSS

GD

≈ CDS + C

GD

GD

150

1.1

1.0

BREAKDOWN VOLTAGE

0.9

NORMALIZED DRAIN TO SOURCE

0.8

-40 0 40
, JUNCTION TEMPERATURE (oC)

T

J

80

120

160

FIGURE 10. NORMALIZED DRAIN TO SOURCEBREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE

100

10

1

, SOURCE TO DRAIN CURRENT (A)

D

I

0.1
0 0.3 0.6 0.9 1.2

V

TJ = 150oC

, SOURCE TO DRAIN VOLTAGE (V)

SD

TJ = 25oC

1.5

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 12. DRAIN CURRENT vs SOURCE TO DRAIN DIODE

VOLTAGE

4-531

RFP4N100, RF1S4N100SM

Typical Performance Curves

16

12

, GATE TO SOURCE VOLTAGE (V)

GS

V

FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Test Circuits and Waveforms

VARY t

TO OBTAIN

P

REQUIRED PEAK I

V

GS

AS

R

G

TC = 25oC, Unless Otherwise Specified (Continued)

ID = 3.9A

V

= 100V

DS

VDS = 200V
VDS = 400V

8

4

0

0 20406080

V

DS

L

DUT

, TOTAL GATE CHARGE (nC)

Q

g

+

V

DD

-

t

P

I

AS

BV

DSS

V

DS

V

DD

0V

P

I

AS

0.01Ω

0

t

AV

t

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

t

ON

t

d(ON)

t

R

L

+

V

R

G

DUT

V

GS

DD

-

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

t

OFF

50%

t

f

90%

10%

4-532

RFP4N100, RF1S4N100SM

Test Circuits and Waveforms

V

DS

V

GS

I

g(REF)

FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORMS

(Continued)

R

L

DUT

V

DD

+

V

DD

-

VGS= 2V

0

I

g(REF)

0

V

GS

Q

g(TH)

Q

V

DS

g(10)

Q

g(TOT)

VGS= 20V

VGS = 10V

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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or otherrights of third parties which may result
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