Datasheet RFP4N05, RFP4N06 Datasheet (Intersil)

RFP4N05, RFP4N06

4A, 50V and 60V, 0.800 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA09378.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP4N05 TO-220AB RFP4N05
RFP4N06 TO-220AB RFP4N06

NOTE: When ordering, include the entire part number.

Packaging

June 1999 File Number

Features

• 4A, 50V and 60V

•r

DS(ON)

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.800Ω

Components to PC Boards”

Symbol

D

G

S

2880.2

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

4-

523

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP4N05, RFP4N06

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP4N05 RFP4N06 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . V

DSS

DGR

Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

D

DM

GS

D

50 60 V
50 60 V

44A

10 10 A

±20 ±20 V

25 25 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperat6ure for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0

RFP4N05 50 - - V
RFP4N06 60 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA, (Figure 8) 2 - 4 V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

DSS,VGS

= 0V, TC= 125oC- - 25 µA

VGS = ±20V, VDS = 0 - - ±100 nA

= 4A, VGS = 10V, (Figures 6, 7) - - 0.800 Ω
= 4A, VGS = 10V - - 3.2 V

≈ 1A, V

RL= 29.2Ω, VGS = 10V,
(Figure 10)

= 30V, RGS= 50Ω,

DD

- 6 15 ns

-1430ns

-1630ns

-1425ns

VGS = 0V, VDS = 25V
f = 1MHz, (Figure 9)

- - 200 pF

- - 85 pF

- - 30 pF

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

NOTES:

2. Pulsed test: width ≤ 300µs duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

4-

524

ISD = 1A - - 1.4 V

SD

ISD = 2A, dlSD/dt = 50A/µs - 100 - ns

rr

RFP4N05, RFP4N06

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

1

OPERATION IN THIS AREA
MAY BE LIMITED BY r

0.10

, DRAIN CURRENT (A)

D

I

0.01
1

V

DS

DS(ON)

10 100

, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED

TC = 25oC

RFP4N05

RFP4N06

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

D

I

1.0

0.5
0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

12

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

10

T

= 25oC

C

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0

1234567

V

DS,

DRAIN TO SOURCE VOLTAGE (V)

VGS = 20V

= 10V

V

GS

= 9V

V

GS

V

= 8V

GS

= 7V

V

GS

= 6V

V

GS

VGS = 5V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

4

VDS= 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

3

2

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

024 6810

, GATE TO SOURCE VOLTAGE (V)

V

GS

25oC

-40oC

125oC

1.6

VGS = 10V
PULSE DURATION = 80µs

1.4

DUTY CYCLE = 0.5% MAX

1.2

1.0

0.8

0.6

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

0.4

DS(ON)

r

0.2

0

024

13

ID,DRAIN CURRENT (A)

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

4-

525

125oC

25oC

-40oC

5

RFP4N05, RFP4N06

Typical Performance Curves

2

ID= 4A, VGS = 10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
T

, JUNCTION TEMPERATURE (oC)

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

200

160

120

80

C, CAPACITANCE (pF)

40

0

01020304050

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

C

C

C

ISS

OSS

RSS

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

2

VGS = V

DS

ID = 250µA

1.5

1

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

50 0 50 100 150

T

, JUNCTION TEMPERATURE (oC)

J

200

FIGURE 8. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

60

DSS
DSS
DSS

VOLTAGE

VDD= BV

I

G(REF)

I

G(ACT)

DSS

VDD= BV

45

30

15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

60

20 80

DSS

0.75BV

0.50BV

0.25BV

DRAIN SOURCE

I

G(REF)

I

G(ACT)

I

G(REF)

GATE

SOURCE

VOLTAGE

RL = 15Ω

= 0.095mA

V

= 10V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

t, TIME (µs)

10

8

6

4

2

0

, GATE TO SOURCE VOLTAGE (V)

GS

V

NOTE: Refer to Intersil Applications Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

4-

526

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

Test Circuits and Waveforms

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

RFP4N05, RFP4N06

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

GS

G

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

D

S

CURRENT

I

D

SAMPLING

DUT

V

DS

0

V

DS

0

I

G(REF)

FIGURE 14. GATE CHARGE WAVEFORMS

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4-

527

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