Datasheet RFP4N06L, RFP4N05L Datasheet (Intersil)

RFP4N05L, RFP4N06L

Data Sheet July 1999

4A, 50V and 60V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs

The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, rela y driv ers and driv ers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.

Formerly developmental type TA09520.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP4N05L TO-220AB RFP4N05L
RFP4N06L TO-220AB RFP4N06L

NOTE: When ordering, include the entire part number.

File Number

Features

• 4A, 50V and 60V

•r

DS(ON)

• Design Optimized for 5V Gate Drives

• Can be Driven Directly from QMOS, NMOS,
TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power-Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 0.800Ω

Components to PC Boards”

2876.2

Packaging

Symbol

D

G

S

JEDEL TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-274

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

| Copyright © Intersil Corporation 1999

RFP4N05L, RFP4N06L

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFP4N05L RFP4N06L UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . .V

DSS

DGR

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

GS

D

DM

D

50 60 V
50 60 V

±10 ±10 V

44A
10 10 A
25 25 W

Derating Above TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 0.2 W/oC

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFP4N05L 50 - - V
RFP4N06L 60 - - V

Gate to Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse-Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

JC

θ

= VDS, ID = 250µA1-2V

VDS = Rated BV

DSS

VDS = 0.8 x Rated BV

, TC = 125oC - - 250 µA

DSS

--25µA

VGS = ±10V, VDS = 0 - - ±100 nA

= 4A, VGS = 5V - - 3.2 V
= 4A, VGS = 5V, (Figures 6, 7) - - 0.800 Ω

≈ 4A, V

RL= 7.5Ω, VGS = 5V
(Figures 10, 11, 12)

= 30V, RG= 6.25Ω,

DD

-1020ns

- 65 130 ns

-2040ns

-3060ns

VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)

- - 225 pF

- - 100 pF

- - 40 pF

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

6-275

ISD = 1A - - 1.4 V

SD

ISD = 2A, dlSD/dt = 100A/µs - 150 - ns

rr

RFP4N05L, RFP4N06L

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE

10

1

0.10

, DRAIN CURRENT (A)

D

I

0.01

OPERATION IN THIS AREA
LIMITED BY r

1

V

DS

DS(ON)

10 100

, DRAIN TO SOURCE VOLTAGE (V)

TJ = MAX RATED
TC = 25oC

RFP4N05L

RFP4N06L

4.5

4.0

3.5

3.0

2.5

2.0

1.5

, DRAIN CURRENT (A)

1.0

D

I

0.5
0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

PULSE DURATION = 80µs

12

DUTY CYCLE = 0.5% MAX
TC = 25oC

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

0

0

1234567

V

DS,

DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 7.5V

V

= 5V

GS

= 4.5V

V

GS

= 4V

V

GS

= 3.5V

V

GS

= 3V

V

GS

V

= 2.5V

GS

VGS = 2V

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

6

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS= 10V

5

4

3

2

, DRAIN TO SOURCE CURRENT (A)

1

DS(ON)

I

0

125oC

-40oC

123 456

V

, GATE TO SOURCE VOLTAGE (V)

GS

-40oC

o

125oC

25

C

1.4

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.2

VGS = 5V

1

0.8

0.6

RESISTANCE (Ω)

, DRAIN TO SOURCE ON

0.4

DS(ON)

0.2

r

0

024

ID,DRAIN CURRENT (A)

125oC

25oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

6-276

-40oC

6

RFP4N05L, RFP4N06L

Typical Performance Curves

2.0
I

= 4A

D

VGS = 5V

1.5

1.0

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

400

300

200

C, CAPACITANCE (pF)

100

0

01020304050

V

C

ISS

C

OSS

C

RSS

DRAIN TO SOURCE VOLTAGE (V)

DS,

VGS = 0V, f = 1MHz

= CGS + C

C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

GD

GS

2.0
VGS = V

DS

ID = 250µA

1.5

1.0

NORMALIZED GATE

0.5

THRESHOLD VOLTAGE

0

50 0 50 100 150

T

, JUNCTION TEMPERATURE (oC)

J

FIGURE 8. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

60

RL = 15Ω

= 0.095mA

I

G(REF)

V

45

30

15

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD= BV

20 80

DRAIN SOURCE

I

G(REF)

I

G(ACT)

DSS

= 5V

GS

GATE

SOURCE

VOLTAGE

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

t, TIME (µs)

VDD= BV

VOLTAGE

DSS

I

G(REF)

I

G(ACT)

10

8

6

4

2

0

200

, GATE TO SOURCE VOLTAGE (V)

GS

V

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

Test Circuits and Waveforms

R

L

+

R

G

DUT

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

6-277

-

NOTE: Refer to Intersil Application Notes AN7254 and AN7260

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

t

ON

t

d(ON)

t

V

DS

V

DD

0

V

GS

10%

0

r

90%

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

RFP4N05L, RFP4N06L

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Intersil semiconductor products are sold by description only.Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with­out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
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