Datasheet RFM3N45, RFM3N50, RFP3N45, RFP3N50 Datasheet (Intersil)

Semiconductor

/
j
/

/

/

/

/

/

/

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Data Sheet October 1998 File Number 1384.2

[ /Title
()

Sub­ect ()
Autho

r ()

Key­words
()

Cre­ator ()

DOCI
NFO
pdf­mark

[

Page­Mode

Use­Out­lines

DOC­VIEW
pdf­mark

3A, 450V and 500V, 3 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17405.

Ordering Information

PART NUMBER PACKAGE BRAND

RFM3N45 TO-204AA RFM3N45
RFM3N50 TO-204AA RFM3N50
RFP3N45 TO-220AB RFP3N45
RFP3N50 TO-220AB RFP3N50

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Features

• 3A, 450V and 500V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

DRAIN (FLANGE)

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

450 500 450 500 V
450 500 450 500 V

3333A
5555A

±20 ±20 ±20 ±20 V

75 75 60 60 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC

Operating and Storage Temperature . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150 -55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM3N45, RFP3N45 450 - - V
RFM3N50, RFP3N50 500 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA, (Figure 7) 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V, TC = 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω
= 3A, VGS = 10V - - 9.0 V

= 250V, I
RL = 165Ω
(Figures 10, 11, 12)

≈ 1.5A, R

D

= 50Ω, VGS = 10V

G

-3045ns

-4060ns

- 90 135 ns

-5075ns

VDS = 25V, VGS = 0V, f = 1MHz - - 750 pF

- - 150 pF

- - 100 pF

RFM3N45, RFM3N50 - - 1.67oC/W
RFP3N45, RFP3N50 - - 2.083oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

2

ISD = 1.5A - - 1.4 V

SD

ISD = 4A, dISD/dt = 100A/µs - 800 - ns

rr

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATIONvsCASE

TEMPERATURE

100

TC = 25oC
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)

10

ID (MAX.) CONTINUOUS

DC OPERATION

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

DS(ON)

3.5

3

2.5
RFP3N45, RFP3N50

2

1.5

1

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

RFM3N45, RFM3N50

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4

3

2

, DRAIN CURRENT (A)

1

D

I

0

0 5 10 15 20 25

V

DS

V

= 10V

GS

, DRAIN TO SOURCE VOLTAGE (V)

V

= 6V

GS

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

VGS = 5V

V

= 4V

GS

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

4

VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

3

TC = -40oC

2

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TC = 25oC

TC = 125oC

6

VGS = 10V
PULSE DURATION = 80µs

DUTY CYCLE

5

4

3

, DRAIN TO SOURCE

2

ON RESISTANCE (Ω)

DS(ON)

1

r

0

01234567

< 2%

TC = 125oC

I

, DRAIN CURRENT (A)

D

TC = 25oC

TC = -40oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Typical Performance Curves

2

ID = 3A, VGS =10V
PULSE DURATION = 80µs

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCEON

RESISTANCE vs JUNCTION TEMPERATURE

800

700
600

500

400

300

C, CAPACITANCE (pF)

200

100

0

0 10203040 5060708090100

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz
C

ISS

C

RSS

C

OSS

C

ISS

C

OSS

C

RSS

= CGS + C

= C

≈ CDS + C

GD

GD

GD

1.4
VDS = 10V

1.3

= 250µA

I

D

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50

0 50 100 150 200

, JUNCTION TEMPERATURE(oC)

T

J

FIGURE 8. NORMALIZED GATETHRESHOLDVOLTAGE vs

JUNCTION TEMPERATURE

500

375

250

125

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

VDD= BV

0

20

DSS

SOURCE

VOLTAGE

R

I

G(REF)

VGS = 10V

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

I

G(REF)

I

G(ACT)

t, TIME (µs)

GATE

= 167Ω

L

= 0.45mA

DSS
DSS
DSS

VDD= BV

I

80

I

DSS

G(REF)
G(ACT)

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

4

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

G

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

V

DS

0

I

G(REF)

FIGURE 14. GATE CHARGE WAVEFORMS

5

Semiconductor

/
j
/

/

/

/

/

/

/

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Data Sheet October 1998 File Number 1384.2

[ /Title
()

Sub­ect ()
Autho

r ()

Key­words
()

Cre­ator ()

DOCI
NFO
pdf­mark

[

Page­Mode

Use­Out­lines

DOC­VIEW
pdf­mark

3A, 450V and 500V, 3 Ohm, N-Channel
Power MOSFETs

These are N-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA17405.

Ordering Information

PART NUMBER PACKAGE BRAND

RFM3N45 TO-204AA RFM3N45
RFM3N50 TO-204AA RFM3N50
RFP3N45 TO-220AB RFP3N45
RFP3N50 TO-220AB RFP3N50

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-204AA JEDEC TO-220AB

DRAIN
(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

Features

• 3A, 450V and 500V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3Ω

DS(ON)

Components to PC Boards”

Symbol

D

G

S

SOURCE

DRAIN

DRAIN (FLANGE)

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Absolute Maximum Ratings T

= 25oC, Unless Otherwise Specified

C

RFM3N45 RFM3N50 RFP3N45 RFP3N50 UNITS

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . V

DGR

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . .I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P

DS

D

DM

GS

D

450 500 450 500 V
450 500 450 500 V

3333A
5555A

±20 ±20 ±20 ±20 V

75 75 60 60 W

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 0.6 0.48 0.48 W/oC

Operating and Storage Temperature . . . . . . . . . . . . TJ, T

STG

-55 to 150 -55 to 150 -55 to 150 -55 to 150

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . .T

Package Body for 10s, See Techbrief 334 . . . . . . . . . .T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

300
260

300
260

300
260

300
260

o

C

o

C

o

C

NOTE:

1. TJ= 25oC to 125oC.

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSSID

= 250µA, VGS = 0V

RFM3N45, RFP3N45 450 - - V
RFM3N50, RFP3N50 500 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)VDD

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance, Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = 250µA, (Figure 7) 2.0 - 4.0 V
VDS = Rated BV
VDS = 0.8 x Rated BV

, VGS = 0V - - 1 µA

DSS

, VGS = 0V, TC = 125oC- - 25 µA

DSS

VGS = ±20V, VDS = 0V - - ±100 nA

= 3A, VGS = 10V, (Figures 5, 6) - - 3 Ω
= 3A, VGS = 10V - - 9.0 V

= 250V, I
RL = 165Ω
(Figures 10, 11, 12)

≈ 1.5A, R

D

= 50Ω, VGS = 10V

G

-3045ns

-4060ns

- 90 135 ns

-5075ns

VDS = 25V, VGS = 0V, f = 1MHz - - 750 pF

- - 150 pF

- - 100 pF

RFM3N45, RFM3N50 - - 1.67oC/W
RFP3N45, RFP3N50 - - 2.083oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width limited by maximum junction temperature.

2

ISD = 1.5A - - 1.4 V

SD

ISD = 4A, dISD/dt = 100A/µs - 800 - ns

rr

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TC, CASE TEMPERATURE (oC)

Unless Otherwise Specified

125

FIGURE 1. NORMALIZED POWER DISSIPATIONvsCASE

TEMPERATURE

100

TC = 25oC
(CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE)

10

ID (MAX.) CONTINUOUS

DC OPERATION

1

, DRAIN CURRENT (A)

D

I

0.1
1 10 100 1000

OPERATION IN THIS
AREA MAY BE
LIMITED BY r

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

DS(ON)

3.5

3

2.5
RFP3N45, RFP3N50

2

1.5

1

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

, CASE TEMPERATURE (oC)

T

C

RFM3N45, RFM3N50

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4

3

2

, DRAIN CURRENT (A)

1

D

I

0

0 5 10 15 20 25

V

DS

V

= 10V

GS

, DRAIN TO SOURCE VOLTAGE (V)

V

= 6V

GS

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

VGS = 5V

V

= 4V

GS

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

4

VDS = 10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

3

TC = -40oC

2

1

, DRAIN TO SOURCE CURRENT (A)

DS(ON)

I

0

0246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TC = 25oC

TC = 125oC

6

VGS = 10V
PULSE DURATION = 80µs

DUTY CYCLE

5

4

3

, DRAIN TO SOURCE

2

ON RESISTANCE (Ω)

DS(ON)

1

r

0

01234567

< 2%

TC = 125oC

I

, DRAIN CURRENT (A)

D

TC = 25oC

TC = -40oC

FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE

VOLTAGE AND DRAIN CURRENT

3

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Typical Performance Curves

2

ID = 3A, VGS =10V
PULSE DURATION = 80µs

1.5

1

ON RESISTANCE

0.5

NORMALIZED DRAIN TO SOURCE

0

-50 0 50 100 150 200
, JUNCTION TEMPERATURE (oC)

T

J

Unless Otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TO SOURCEON

RESISTANCE vs JUNCTION TEMPERATURE

800

700
600

500

400

300

C, CAPACITANCE (pF)

200

100

0

0 10203040 5060708090100

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz
C

ISS

C

RSS

C

OSS

C

ISS

C

OSS

C

RSS

= CGS + C

= C

≈ CDS + C

GD

GD

GD

1.4
VDS = 10V

1.3

= 250µA

I

D

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50

0 50 100 150 200

, JUNCTION TEMPERATURE(oC)

T

J

FIGURE 8. NORMALIZED GATETHRESHOLDVOLTAGE vs

JUNCTION TEMPERATURE

500

375

250

125

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

VDD= BV

0

20

DSS

SOURCE

VOLTAGE

R

I

G(REF)

VGS = 10V

0.75BV

0.50BV

0.25BV

DRAIN SOURCE VOLTAGE

I

G(REF)

I

G(ACT)

t, TIME (µs)

GATE

= 167Ω

L

= 0.45mA

DSS
DSS
DSS

VDD= BV

I

80

I

DSS

G(REF)
G(ACT)

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

4

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT

RFM3N45, RFM3N50, RFP3N45, RFP3N50

Test Circuits and Waveforms

R

G

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT

CURRENT

REGULATOR

12V

BATTERY

0.2µF

50kΩ

0.3µF

G

t

ON

t

d(ON)

t

R

L

+

V

DD

-

DUT

V

DS

0

V

GS

0

90%

10%

r

10%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

t

f

90%

10%

FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

V

DS

(ISOLATED
SUPPLY)

SAME TYPE
AS DUT

D

DUT

V

DD

Q

g(TOT)

Q

gd

Q

gs

V

DS

0

V

GS

I

0

G(REF)

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT

S

CURRENT

I

D

SAMPLING

V

DS

0

I

G(REF)

FIGURE 14. GATE CHARGE WAVEFORMS

5