Datasheet RFP2P08, RFP2P10 Datasheet (Intersil)

Semiconductor

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RFP2P08, RFP2P10

[ /Title
(RFP2P
08,
RFP2P

10)
Sub­ect (-

2A, ­80V
and ­100V,

3.500

Ohm,
P-Chan­nel
Power
MOS­FETs)

Author

()

Key-

words
(Harris
Semi­conduc­tor,
P-Chan­nel
Power
MOS­FETs,
TO­220AB)

Cre-

ator ()

DOCI

NFO
pdf-

Data Sheet

-2A, -80V and -100V, 3.500 Ohm,
P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate
power field effect transistors designed for applications such
as switching regulators, switching converters. motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.

Formerly developmental type TA_____.

Ordering Information

PART NUMBER PACKAGE BRAND

RFP2P08 TO-220AB RFP2P08
RFP2P10 TO-220AB RFP2P10

NOTE: When ordering, use entire part number.

Packaging

DRAIN (FLANGE)

TO-220AB

October 1998 File Number 2870.1

Features

• -2A, -80V and -100V

•r

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

= 3.500Ω

DS(ON)

Components to PC Boards

Symbol

D

G

S

SOURCE

DRAIN

GATE

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

| Copyright © Harris Corporation 1998

RFP2P08, RFP2P10

RFP2P08 RFP2P10 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

DSS

DGR

D

DM

GS

D

Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . .TJ,T

STG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . T

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

L

pkg

NOTE:

1. TJ= 25oC to 125oC.

-80 -100 V

-80 -100 V
2

5

2
5

±20 ±20 V

25

0.2

25

0.2

-55 to 150 -55 to 150

300
260

300
260

A
A

W

W/oCaaa

o

C

o

C

o

C

Electrical Specifications T

= 25oC, Unless Otherwise Specified

C

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

DSS

ID = -250µA, VGS = 0

RFP2P08 -80 - - V
RFP2P10 -100 - - V

Gate Threshold Voltage V

GS(TH)VGS

Zero-Gate Voltage Drain Current I

Gate to Source Leakage Current I
Drain to Source On Resistance (Note 2) r
Drain to Source On Voltage (Note 2) V
Turn-On Delay Time t

DS(ON)ID

DS(ON)ID

d(ON)ID

Rise Time t
Turn-Off Delay Time t

d(OFF)

Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R

DSS

GSS

r

f

ISS
OSS
RSS

θJC

= VDS, ID = -250µA -2--4V
VDS = Rated BV
VDS= 0.8 x Rated BV

, VGS = 0V - - -1 µA

DSS

DSS,VGS

= 0V, TC= 125oC - - -25 µA

VGS = ±20V, VDS = 0V - - ±100 nA

= -2A, VGS = -10V (Figures 6, 7) - - 3.500 Ω
= -2A, VGS = -10V - - -7.0 V
= ≈ 1A, VDD = -50V, RG = 50Ω, VGS = -10V,

RL = 46.5Ω
(Figures 10, 11, 12)

- 7 25 ns

-1545ns

-1445ns

-1125ns

VGS = 0V, VDS = -25V, f =1MHz
(Figure 9)

- - 150 pF

- - 80 pF

- - 30 pF

--5oC/W

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Source to Drain Diode Voltage (Note 2) V
Diode Reverse Recovery Time t

SD

rr

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive rating: pulse width is limited by maximum junction temperature.

2

ISD = -1A - - -1.4 V
ISD = -2A, dISD/dt = 50A/µs - 135 - ns

RFP2P08, RFP2P10

Typical Performance Curves

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 125 150

TC, CASE TEMPERATURE (oC)

Unless otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs

CASE TEMPERATURE

10

1

TJ = MAX RATED
T

C

= 25oC

2.5

2.0

1.5

1.0

, DRAIN CURRENT (A)

D

I

0.5

0

25 50 75 100 125 150

T

, CASE TEMPERATURE (oC)

C

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

4

PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

= 25oC

T

C

3

VGS = -20V

2

0.10

, DRAIN CURRENT (A)

D

I

0.01

OPERATION IN THIS AREA
MAY BE LIMITED BY r

1 10 100 1000

VDS, DRAIN TO SOURCE VOLTAGE (V)

DS(ON)

DRAIN CURRENT (A)

1

D,

I

0-2-3-4-5

VGS = -4V

-1
V

DRAIN TO SOURCE VOLTAGE (V)

DS,

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS

3.5
VDS= -15V

PULSE DURATION = 80µs

3

DUTY CYCLE ≤ 2%

2.5

2

1.5

1

DRAIN TO SOURCE CURRENT (A)

0.5

DS(ON),

I

0

0 -2 -4 -6 -8 -10

V

GATE TO SOURCE VOLTAGE (V)

GS,

-40oC

25oC

125oC

4

125oC

3

2

DRAIN TO SOURCE ON

RESISTANCE (Ω)

1

DS(ON),

r

0

012345

ID,DRAIN CURRENT (A)

VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE ≤ 2%

o

C

25

o

-40

C

VGS = -10V

VGS = -8V
VGS = -7V

VGS = -6V

V

= -5V

GS

FIGURE 5. TRANSER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN

CURRENT

3

(

)

(

)

RFP2P08, RFP2P10

Typical Performance Curves

I

= -2A

D

VGS = -10V

2

PULSE DURATION = 80µs

1.5

1

ON RESISTANCE (mΩ)

0.5

NORMALIZED DRAIN TO SOURCE

-50 0 50 100 150
JUNCTION TEMPERATURE (oC)

T

J,

Unless otherwise Specified (Continued)

FIGURE 7. NORMALIZED DRAIN TOSOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

160
140

120

C

100

80

60

C, CAPACITANCE (pF)

40

20

0

0 -10 -20 -30 -40 -50

V

DRAIN TO SOURCE VOLTAGE (V)

DS,

ISS

C

OSS

C

RSS

VGS = 0V, f = 1MHz
C

= CGS + C

ISS

C

= C

RSS
OSS

GD

≈ CDS + C

C

FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

GD

GD

1.4

= 250µA

I

D

VDS = -5V

1.3

1.2

1.1

1.0

0.9

NORMALIZED GATE

0.8

THRESHOLD VOLTAGE

0.7

0.6

-50 0 50 100
T

JUNCTION TEMPERATURE (oC)

J,

FIGURE 8. NORMALIZED GATETHRESHOLD VOLTAGE vs

JUNCTION TEMPERATURE

100

V

DSS
DSS
DSS

DD

= BV

IG(REF)

I

DSS

ACT

75

50

25

, DRAIN TO SOURCE VOLTAGE (V)

DS

V

0

VDD= BV

20 80

IG(REF)

ACT

I

DSS

GATE

SOURCE

VOLTAGE

RL = 50Ω

I

G(REF)

V

GS

0.75BV

DSS

0.50BV

DSS

0.25BV

DSS

DRAIN SOURCE

VOLTAGE

t, TIME (µs)

= 0.095mA

= -10V

0.75BV

0.50BV

0.25BV

NOTE: Refer to Harris Application Notes AN7254 and AN7260.

FIGURE 10. NORMALIZED SWITCHING WAVEFORMSFOR

CONSTANT GATE CURRENT

150

10

8

6

4

2

, GATE TO SOURCE VOLTAGE (V)

GS

V

0

Test Circuit and Waveforms

DUT

R

V

GS

FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

G

4

t

ON

t

d(ON)

t

R

L

-

V

DD

+

0

V

DS

V

GS

0

10%

r

10%

90%

50%

PULSE WIDTH

t

d(OFF)

90%

t

OFF

50%

90%

t

f

10%

Test Circuit and Waveforms

CURRENT

REGULATOR

12V

BATTERY

0

0.2µF

50kΩ

I

G(REF)

0.3µF

G

IG CURRENT

SAMPLING

RESISTOR RESISTOR

FIGURE 13. GATE CHARGE TEST CIRCUIT FIGURE 14. GATE CHARGE WAVEFORMS

RFP2P08, RFP2P10

-V

DS

(ISOLATED
SUPPLY)

DUT

D

DUT

S

CURRENT

I

D

SAMPLING

+V

DS

0

V

DS

Q

gs

V

DD

0

I

G(REF)

Q

gd

Q

g(TOT)

V

GS

5