Page 1
RFP2N20L
Data Sheet July 1999
2A, 200V, 3.500 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate
power field effect transistor is specifically designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off powercontroldirectlyfrom logic circuit
supply voltages.
Formerly developmental type TA09532.
Ordering Information
PART NUMBER PACKAGE BRAND
RFP2N20L TO-220AB RFP2N20L
NOTE: When ordering, include the entire part number.
File Number
Features
• 2A, 200V
•r
DS(ON)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from QMOS, NMOS,
TTL Circuits
• Compatible with Automotive Drive Requirements
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
= 3.500Ω
Components to PC Boards”
2875.2
Packaging
Symbol
D
G
S
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-256
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
| Copyright © Intersil Corporation 1999
Page 2
RFP2N20L
Absolute Maximum Ratings T
= 25oC, Unless Otherwise Specified
C
RFP2N20L UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain to Gate Voltage RGS = 20KΩ (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DSS
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Drain Current, RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
GS
D
DM
D
200 V
200 V
±10 V
2A
4A
25 W
Derate Linearly Above TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.2 W/oC
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, T
STG
-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
L
pkg
300
260
o
C
o
C
o
C
NOTE:
1. TJ= 25oC to 125oC.
Electrical Specifications T
= 25oC, Unless Otherwise Specified
C
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
Gate to Threshold Voltage V
Zero Gate Voltage Drain Current I
DSS
GS(TH)VGS
DSS
ID = 250µA, VGS = 0V 200 - - V
= VDS, ID = 250µA1-2V
VDS = Rated BV
VDS = 0.8 x Rated BV
, VGS= 0V - - 1 µA
DSS
, VGS = 0V,
DSS
--25µA
TC = 125oC
Gate to Source Leakage Current I
Drain to Source On Voltage (Note 2) V
Drain to Source On Resistance (Note 2) r
Turn-On Delay Time t
DS(ON)ID
DS(ON)ID
d(ON)ID
Rise Time t
Turn-Off Delay Time t
d(OFF)
Fall Time t
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Thermal Resistance Junction to Case R
GSS
r
f
ISS
OSS
RSS
JC
θ
VGS = ±10V, VDS = 0 - - ±100 nA
= 2A, VGS = 5V - - 7 V
= 2A, VGS = 5V (Figures 6, 7) - - 3.500 Ω
= 2A, VDD = 100V, RG= 6.25Ω, VGS = 5V
RL= 50Ω (Figures 10, 11, 12)
-1025ns
-1030ns
-2540ns
-2025ns
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 9)
- - 200 pF
- - 60 pF
- - 35 pF
--5oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
Reverse Recovery Time t
NOTES:
2. Pulsed: pulse duration = 300µs max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
6-257
ISD = 2A - - 1.4 V
SD
ISD = 2A, dlSD/dt = 50A/µs - 200 - ns
rr
Page 3
RFP2N20L
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
POWER DISSIPATION MULTIPLIER
0
0 25 50 75 100 125 150
, CASE TEMPERATURE (oC)
T
C
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWERDISSIPATION vs CASE
TEMPERATURE
10
OPERATION IN THIS AREA
LIMITED BY r
1
DS(ON)
TJ = MAX RATED
TC = 25oC
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
, DRAIN CURRENT (A)
0.6
D
I
0.4
0.2
0
25 50 75 100 125 150
T
, CASE TEMPERATURE (oC)
C
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
V
= 5V
PULSE DURATION = 80µs
3
DUTY CYCLE = 0.5% MAX
T
= 25oC
C
2.5
2
VGS = 10V
GS
V
= 4V
GS
1.5
0.1
, DRAIN CURRENT (A)
D
I
0.01
1
V
DS
10 100 1000
, DRAIN TO SOURCE VOLTAGE (V)
1
, DRAIN CURRENT (A)
D
I
0.5
0
0
1234567
V
DS,
DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS
4
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS= 15V
3
2
1
, DRAIN TO SOURCE CURRENT (A)
DS(ON)
I
0
012 345
125oC
-40oC
V
, GATE TO SOURCE VOLTAGE (V)
GS
125oC
-40oC
o
C
25
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
4
3
2
RESISTANCE (Ω)
, DRAIN TO SOURCE ON
1
DS(ON)
r
0
01234
125oC
25oC
ID,DRAIN CURRENT (A)
VGS = 3V
= 2V
V
GS
-40oC
FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN
CURRENT
6-258
Page 4
RFP2N20L
Typical Performance Curves
= 2A
I
D
VGS = 5V
2.0
1.5
1.0
ON RESISTANCE
0.5
NORMALIZED DRAIN TO SOURCE
-50 0 50 100 150
T
, JUNCTION TEMPERATURE (oC)
J
Unless Otherwise Specified (Continued)
FIGURE 7. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
180
C
C
C
ISS
OSS
RSS
140
100
60
C, CAPACITANCE (pF)
20
0
0 1020304050
V
DRAIN TO SOURCE VOLTAGE (V)
DS,
VGS = 0V, f = 1MHz
= CGS + C
C
C
C
ISS
RSS
OSS
= C
GD
≈ CDS + C
GD
GD
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
2.0
ID = 250µA
1.5
1.0
NORMALIZED GATE
0.5
THRESHOLD VOLTAGE
0
50 0 50 100 150
T
, JUNCTION TEMPERATURE (oC)
J
FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGEvs
JUNCTION TEMPERATURE
200
150
100
50
, DRAIN TO SOURCE VOLTSAGE (V)
DS
V
0
RL = 100Ω
= 0.09mA
I
G(REF)
V
= 5V
GS
GATE
SOURCE
VDD= BV
I
G(REF)
20 80
I
G(ACT)
VOLTAGE
DSS
0.75BV
0.50BV
0.25BV
DRAIN SOURCE
t, TIME (µs)
VDD= BV
DSS
DSS
DSS
VOLTAGE
DSS
I
G(REF)
I
G(ACT)
10
8
6
4
2
0
NOTE: Refer to Intersil Applications Notes AN7254 and AN7260
FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR
CONSTANT GATE CURRENT
200
, GATE TO SOURCE VOLTAGE (V)
GS
V
Test Circuits and Waveforms
R
G
V
GS
FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
6-259
t
ON
t
d(ON)
t
R
L
+
V
DD
-
DUT
V
DS
0
V
GS
0
90%
10%
r
10%
50%
PULSE WIDTH
t
d(OFF)
90%
t
OFF
50%
t
f
90%
10%
Page 5
RFP2N20L
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6-260
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